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HMC636ST89 / 636ST89E v02.0311
Typical Applications
Features
The HMC636ST89(E) is ideal for:
Low Noise Figure: 2.2 dB
• Cellular / PCS / 3G
High P1dB Output Power: +22 dBm
• WiMAX, WiBro, & Fixed Wireless
High Output IP3: +40 dBm
• CATV & Cable Modem
Gain: 13 dB
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• Microwave Radio
50 Ohm I/O’s - No External Matching
Amplifiers - Linear & Power - SMT
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
Functional Diagram
Industry Standard SOT89 Package
General Description The HMC636ST89(E) is a GaAs pHEMT, High Linearity, Low Noise, Wideband Gain Block Amplifier covering 0.2 to 4.0 GHz. Packaged in an industry standard SOT89, the amplifier can be used as either a cascadable 50 Ohm gain stage, a PA Pre-Driver, a Low Noise Amplifier, or a Gain Block with up to +23 dBm output power. This versatile Gain Block Amplifier is powered from a single +5V supply and requires no external matching components The internally matched topology makes this amplifier compatible with virtually any PCB material or thickness.
Electrical Specifications, Vs= 5.0 V, TA = +25° C Parameter
Min
Frequency Range Gain
Typ.
Max
Min.
0.2 - 2.0 10
Gain Variation Over Temperature Input Return Loss
Max.
2.0 - 4.0
13 0.01
Typ.
5 0.02
10
GHz
10 0.01
Units
dB 0.02
dB/ °C
10
dB
Output Return Loss
13
15
dB
Reverse Isolation
22
20
dB
Output Power for 1 dB Compression (P1dB)
19
22
20
23
dBm
Output Third Order Intercept (IP3)
36
39
36
39
dBm
Noise Figure
2.5
2
Supply Current (Icq)
155
155
dB 175
mA
Note: Data taken with broadband bias tee on device output.
9-1
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC636ST89 / 636ST89E v02.0311
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz Gain vs. Temperature
20
16
15
14
10
12 S21 S11 S22
0 -5
10 8 6
-10
4
-15
2
-20
0 0
1
2
3
4
5
6
0
1
FREQUENCY (GHz)
2
3
4
FREQUENCY (GHz)
Input Return Loss vs. Temperature
Output Return Loss vs. Temperature
0
0
-5
-5
RETURN LOSS (dB)
RETURN LOSS (dB)
9
+25C +85C -40C
-10
+25C +85C -40C
-15
-20
+25C +85C -40C
-10
-15
-20 0
1
2
3
4
0
1
FREQUENCY (GHz)
2
3
4
3
4
FREQUENCY (GHz)
Reverse Isolation vs. Temperature
Noise Figure vs. Temperature
0
10
8 NOISE FIGURE (dB)
REVERSE ISOLATION (dB)
9 +25C +85C -40C
-5
-10
-15
+25C +85C -40C
7
Amplifiers - Linear & Power - SMT
5
GAIN (dB)
RESPONSE (dB)
Broadband Gain & Return Loss
6 5 4 3 2
-20
1 0
-25 0
1
2 FREQUENCY (GHz)
3
4
0
1
2 FREQUENCY (GHz)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
9-2
HMC636ST89 / 636ST89E v02.0311
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
25
25
20
20
Psat (dBm)
30
15 10
+25C +85C -40C
5
0
0 0
1
2
3
4
0
1
2
FREQUENCY (GHz)
28
Pout (dBm), GAIN (dB), PAE (%)
Pout (dBm), GAIN (dB), PAE (%)
32
24 20 16 12 8 4 0
Pout Gain PAE
-4 -16
-12
-8
-4
0
4
8
12
20 16 12 8 4 0 -4 -8 -20
16
Pout Gain PAE
24
-16
-12
45
35
30 0 dBm + 5 dBm +10 dBm
20 FREQUENCY (GHz)
0
4
8
12
16
3
4
160
50 Is
140 120
40
100 30
Gain P1dB Psat OIP3
80 60 40
20
20 0
10 4.5
4.75
5
5.25
5.5
Vs (Vdc)
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
Is (mA)
IP3 (dBm)
40
2
-4
Gain, Power, Output IP3 & Supply Current vs. Supply Voltage @ 850 MHz
Output IP3 vs. Input Tone Power
1
-8
INPUT POWER (dBm)
INPUT POWER (dBm)
0
4
Power Compression @ 2200 MHz
28
-8 -20
3
FREQUENCY (GHz)
Power Compression @ 850 MHz
25
9-3
15 10
+25C +85C -40C
5
Amplifiers - Linear & Power - SMT
Psat vs. Temperature
30
GAIN (dB), P1dB (dBm), Psat (dBm), IP3 (dBm)
9
P1dB (dBm)
P1dB vs. Temperature
HMC636ST89 / 636ST89E v02.0311
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
Absolute Maximum Ratings +5.5 Volts
RF Input Power (RFIN)(Vcc = +5 Vdc)
+16 dBm
Channel Temperature
150 °C
Continuous Pdiss (T = 85 °C) (derate 13.3 mW/°C above 85 °C)
0.86 W
Thermal Resistance (Channel to lead)
75.6 °C/W
Storage Temperature
-65 to +150 °C
Operating Temperature
-40 to +85 °C
ESD Sensitivity (HBM)
Class 1A
ELECTROSTATIC SENSITIVE DEVICE OBSERVE HANDLING PRECAUTIONS
9
Outline Drawing
NOTES: 1. PACKAGE BODY MATERIAL: MOLDING COMPOUND MP-180S OR EQUIVALENT. 2. LEAD MATERIAL: Cu w/ Ag SPOT PLATING. 3. LEAD PLATING: 100% MATTE TIN. 4. DIMENSIONS ARE IN INCHES [MILLIMETERS] 5. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.15mm PER SIDE. 6. DIMENSION DOES NOT INCLUDE MOLDFLASH OF 0.25mm PER SIDE. 7. ALL GROUND LEADS MUST BE SOLDERED TO PCB RF GROUND.
Amplifiers - Linear & Power - SMT
Collector Bias Voltage (Vcc)
Package Information Part Number
Package Body Material
Lead Finish
MSL Rating
HMC636ST89
Low Stress Injection Molded Plastic
Sn/Pb Solder
MSL1
[1]
HMC636ST89E
RoHS-compliant Low Stress Injection Molded Plastic
100% matte Sn
MSL1
[2]
Package Marking [3] H636 XXXX H636 XXXX
[1] Max peak reflow temperature of 235 °C [2] Max peak reflow temperature of 260 °C [3] 4-Digit lot number XXXX
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
9-4
HMC636ST89 / 636ST89E v02.0311
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
Pin Descriptions Pin Number
Function
Description
1
RFIN
This pin is DC coupled. An off-chip DC blocking capacitor is required.
3
RFOUT
RF Output and DC BIAS for the amplifier. See Application Circuit for off-chip components.
2, 4
GND
These pins and package bottom must be connected to RF/DC ground.
Amplifiers - Linear & Power - SMT
9
9-5
Interface Schematic
Application Circuit
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
HMC636ST89 / 636ST89E v02.0311
GaAs pHEMT High Linearity Gain Block, 0.2 - 4.0 GHz
Evaluation PCB
List of Materials for Evaluation PCB 119394 Item
Description
J1 - J2
PCB Mount SMA Connector
J3 - J4
DC Pin
C1 - C3
100 pF Capacitor, 0402 Pkg.
C4
1000 pF Capacitor, 0603 Pkg.
C5
2.2 µF Capacitor, Tantalum
L1
47 nH Inductor, 0603 Pkg.
U1
HMC636ST89(E)
PCB [2]
119392 Evaluation PCB
[1] Reference this number when ordering complete evaluation PCB
[1]
The circuit board used in the final application should use RF circuit design techniques. Signal lines should have 50 Ohm impedance while the package ground leads and package bottom should be connected directly to the ground plane similar to that shown. A sufficient number of via holes should be used to connect the top and bottom ground planes. The evaluation board should be mounted to an appropriate heat sink. The evaluation circuit board shown is available from Hittite upon request.
Amplifiers - Linear & Power - SMT
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[2] Circuit Board Material: FR4
For price, delivery and to place orders: Hittite Microwave Corporation, 20 Alpha Road, Chelmsford, MA 01824 Phone: 978-250-3343 Fax: 978-250-3373 Order On-line at www.hittite.com Application Support: Phone: 978-250-3343 or
[email protected]
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