Transcript
AO3162 600V,0.034A N-Channel MOSFET
General Description
Product Summary
The AO3162 is fabricated using an advanced high voltage MOSFET process that is designed to deliver high levels of performance and robustness in popular AC-DC applications. By providing low RDS(on), Ciss and Crss along with guaranteed avalanche capability this device can be adopted quickly into new and existing offline power supply designs.
Top View
VDS
700V@150℃
ID (at VGS=10V)
0.034A
RDS(ON) (at VGS=10V)
< 500Ω
SOT23A Bottom View
D
D
D
G
S
G S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS
Gate-Source Voltage Continuous Drain CurrentA,F
TA=25°C
Pulsed Drain Current B Peak diode recovery dv/dt TA=25°C Power Dissipation A
IDM dv/dt PD
TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead
Rev0: May 2012
C
Steady-State Steady-State
±30
V
0.028
A
0.16 5 1.39
V/ns W
0.89
TJ, TSTG
Symbol t ≤ 10s
Units V
0.034
ID
TA=70°C
Maximum 600
RθJA RθJL
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-50 to 150
Typ 70 100 63
°C
Max 90 125 80
Units °C/W °C/W °C/W
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AO3162
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Conditions
Min
Typ
Max
ID=250µA, VGS=0V, TJ=25°C ID=250µA, VGS=0V, TJ=150°C
600
-
-
-
700
-
Units
STATIC PARAMETERS BVDSS
Drain-Source Breakdown Voltage
BVDSS /∆TJ
Zero Gate Voltage Drain Current
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±30V
VGS(th)
Gate Threshold Voltage
VDS=5V, ID=8µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=0.016A
gFS
Forward Transconductance
VDS=40V, ID=0.016A
VSD
Diode Forward Voltage
IS=0.016A,VGS=0V
IS
Maximum Body-Diode Continuous Current
ISM
Maximum Body-Diode Pulsed Current
-
ID=250µA, VGS=0V
-
0.69
VDS=600V, VGS=0V
-
VDS=480V, TJ=125°C
-
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=25V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge VGS=10V, VDS=400V, ID=0.01A
V o
-
V/ C
-
1
-
10
µA
-
-
±100
2.8
3.2
4.1
nΑ V
-
154
500
Ω
-
0.045
-
S
-
0.74
1
V
-
-
0.034
A
-
0.16
A
-
4.2
6
pF
-
0.45
0.6
pF
-
0.05
0.07
pF
14
28
42
Ω
-
0.1
0.15
nC
-
0.03
0.05
nC nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
-
0.05
0.08
tD(on)
Turn-On DelayTime
-
13.8
20
ns
tr
Turn-On Rise Time
-
10
15
ns
-
39.2
57
ns
-
13
19
ns
-
105
160
-
9.5
14.3
ns nC
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=300V, ID=0.01A, RG=6Ω IF=0.016A,dI/dt=100A/µs,VDS=300V
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=0.016A,dI/dt=100A/µs,VDS=300V
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: May 2012
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AO3162
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 0.04
0.025
0.035
VDS=40V 10V
0.03
0.02
0.015
5V
0.02
ID(A)
ID (A)
0.025
25°C
0.01
0.015 4.5V
0.01
0.005 0.005
VGS=4V
0
0 0
2
4
6
8
10
0
1
VDS (Volts) Fig 1: On-Region Characteristics 300
3
4
5
6
Normalized On-Resistance
2.5
250
VGS=10V
200 RDS(ON) (Ω Ω)
2
VGS(Volts) Figure 2: Transfer Characteristics
150 100 50 0
2 VGS=10V ID=0.016A 1.5
1
0.5
0 0
0.01
0.02
0.03
0.04
-75
-25
25
75
125
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
1.2
1.0E+00
40 1.0E-01
1.1
1
IS (A)
BVDSS (Normalized)
ID=30A
125°
0.9
125°C
1.0E-02
1.0E-03
25°C
25°
0.8
1.0E-04 -100
Rev0: May 2012
-50
0
50 100 150 200 TJ (oC) Figure 5: Break Down vs. Junction Temperature
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0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics
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AO3162
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100.00
10 VDS=400V ID=0.01A
10.00 Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
Coss
1.00
Crss 0.10
2
0
0.01 0.00
0.03
0.06 0.09 Qg (nC) Figure 7: Gate-Charge Characteristics
0.12
0.1
1
1 10 VDS (Volts) Figure 8: Capacitance Characteristics
120 100µs
100
1ms
80
TJ(Max)=150°C TA=25°C
RDS(ON) limited
0.01
10ms 0.1s 1s 10s
DC
Power (W)
0.1 ID (Amps)
100
60 40
0.001 TJ(Max)=150°C TA=25°C
20
0.0001
0 1
10
100
1000
0.0001
VDS (Volts)
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Zθ JC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=125°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD 0.01 Single Pulse
Ton T
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Rev0: May 2012
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AO3162
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ +
VDC
-
VDC
DUT
Qgs
Vds
Qgd
-
Vgs Ig Charge
Res istive Switching Test Circuit & Waveforms RL
Vds Vds
DUT
Vgs
+ VDC
90%
Vdd
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L EAR= 1/2 LI
Vds
2 AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
-
Rg
Vdd
I AR Id
DUT Vgs
Vgs
Diode Recovery Tes t Circuit & Waveforms Qrr = - Idt
Vds + DUT Vgs
Vds -
Isd Vgs
Ig
Rev0: May 2012
L
Isd
+ Vdd
trr
dI/dt IRM
Vdd
VDC
-
IF
Vds
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