Ao3403 30v P-channel Mosfet General Description Product Summary

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AO3403 30V P-Channel MOSFET General Description Product Summary The AO3403 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. ID (at VGS=-10V) -30V -2.6A RDS(ON) (at VGS=-10V) < 115mΩ VDS RDS(ON) (at VGS =-4.5V) < 150mΩ RDS(ON) (at VGS =-2.5V) < 200mΩ SOT23 Top View D Bottom View D D G S G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TA=25°C Continuous Drain Current Pulsed Drain Current Power Dissipation Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead Rev 10: Jan. 2011 Steady-State Steady-State A 1.4 W 0.9 TJ, TSTG Symbol t ≤ 10s V -13 PD TA=70°C ±12 -2.2 IDM TA=25°C B Units V -2.6 ID TA=70°C C Maximum -30 RθJA RθJL www.aosmd.com -55 to 150 Typ 70 100 63 °C Max 90 125 80 Units °C/W °C/W °C/W Page 1 of 5 AO3403 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS Zero Gate Voltage Drain Current Conditions Min ID=-250µA, VGS=0V -30 -1 TJ=55°C -5 Gate-Body leakage current VDS=0V, VGS= ±12V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -0.6 ID(ON) On state drain current VGS=-10V, VDS=-5V -13 VGS=-10V, ID=-2.6A Static Drain-Source On-Resistance TJ=125°C 88 115 143 200 A mΩ 150 mΩ mΩ VDS=-5V, ID=-2.6A IS Maximum Body-Diode Continuous Current 8 -0.78 DYNAMIC PARAMETERS Ciss Input Capacitance Gate resistance V 200 IS=-1A,VGS=0V Rg nA -1.4 103 Diode Forward Voltage Output Capacitance ±100 -1 139 Forward Transconductance Reverse Transfer Capacitance µA VGS=-2.5V, ID=-1A VSD Coss Units VGS=-4.5V, ID=-2A gFS Crss Max V VDS=-30V, VGS=0V IGSS RDS(ON) Typ 260 VGS=0V, VDS=-15V, f=1MHz S -1 V -1.5 A 315 pF 37 pF 20 pF 8 12 Ω SWITCHING PARAMETERS Qg(10V) Total Gate Charge 5.9 7.2 nC Qg(4.5V) Total Gate Charge 2.8 3.5 nC Qgs Gate Source Charge VGS=0V, VDS=0V, f=1MHz VGS=-10V, VDS=-15V, ID=-2.6A 4 0.7 nC Qgd Gate Drain Charge 1 nC tD(on) Turn-On DelayTime 6 ns tr Turn-On Rise Time 3.5 ns VGS=-10V, VDS=-15V, RL=5.76Ω, RGEN=3Ω tD(off) Turn-Off DelayTime tf Turn-Off Fall Time 20 ns 5 ns trr Body Diode Reverse Recovery Time IF=-2.6A, dI/dt=100A/µs 11.5 Qrr Body Diode Reverse Recovery Charge IF=-2.6A, dI/dt=100A/µs 4.5 15 ns nC A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 10: Jan. 2011 www.aosmd.com Page 2 of 5 AO3403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15 10 -10V 12 -4.5V VDS=-5V 8 -3V -6V 6 -ID(A) -ID (A) 9 -2.5V 6 VGS=-2V 3 4 125°C 2 25°C 0 0 0 1 2 3 4 0 5 210 1 1.5 2 2.5 3 3.5 4 Normalized On-Resistance 2 190 VGS=-2.5V 170 RDS(ON) (mΩ Ω) 0.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 150 VGS=-4.5V 130 110 90 VGS=-10V 70 VGS=-10V ID=-2.6A 1.8 1.6 17 1.4 VGS=-4.5V 5 ID=-2A 2 1.2 10 VGS=-2.5V ID=-1A 1 0.8 50 0 1 0 2 3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 25 50 75 100 125 150 175 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 250 1.0E+02 ID=-2.6A 1.0E+01 40 1.0E+00 125°C -IS (A) RDS(ON) (mΩ Ω) 200 150 125°C 25°C 1.0E-02 1.0E-03 25°C 100 1.0E-01 1.0E-04 1.0E-05 50 0 4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 10: Jan. 2011 2 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 5 AO3403 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 400 VDS=-15V ID=-2.6A 8 Ciss Capacitance (pF) -VGS (Volts) 300 6 4 200 Coss 100 2 0 Crss 0 0 1 2 3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics 6 0 5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics 30 10000 100.0 TA=25°C 1000 10µs 1.0 RDS(ON) limited 100µs 1ms 10ms 0.1 Power (W) -ID (Amps) 10.0 100 10 TJ(Max)=150°C TA=25°C 10s DC 1 0.0 0.01 0.1 1 -VDS (Volts) 10 0.00001 100 0.001 0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JA Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=125°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 10: Jan. 2011 www.aosmd.com Page 4 of 5 AO3403 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgd Qgs Vds + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton Vgs - DUT Vgs VDC td(on) t d(off) tr tf 90% Vdd + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev 10: Jan. 2011 L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 5 of 5