Transcript
AO3420 20V N-Channel MOSFET
General Description
Product Summary
The AO3420 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V while retaining a 12V VGS(MAX) rating. This device is suitable for use as a uni-directional or bi-directional load switch.
VDS
20V 6A
ID (at VGS=10V) RDS(ON) (at VGS=10V)
< 24mΩ
RDS(ON) (at VGS =4.5V)
< 27mΩ
RDS(ON) (at VGS=2.5V)
< 42mΩ
RDS(ON) (at VGS=1.8V)
< 55mΩ
SOT23 Top View
D
Bottom View
D
D
G
S
G S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current
C
Power Dissipation B
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev.2. 0: August 2013
Steady-State Steady-State
A
30 W
0.9
TJ, TSTG
Symbol t ≤ 10s
V
1.4
PD
TA=70°C
±12 5
IDM TA=25°C
Units V
6
ID
TA=70°C
Maximum 20
RθJA RθJL
°C
-55 to 150
Typ 70 100 63
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Max 90 125 80
Units °C/W °C/W °C/W
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AO3420
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±12V
Gate Threshold Voltage
VDS=VGS ID=250µA VGS=10V, ID=6A
0.75
24
VGS=4.5V, ID=5A
18
27
mΩ
VGS=2.5V, ID=4A
23
42
mΩ
VGS=1.8V, ID=2A
31
55
mΩ
VDS=5V, ID=6A
25
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance Reverse Transfer Capacitance
Rg
Gate resistance
V
35
Forward Transconductance
Coss
nA
1.1
16
gFS
Crss
±100
23
TJ=125°C Static Drain-Source On-Resistance
µA
5 0.4
Units V
1 TJ=55°C
VGS(th)
Max
20
VDS=20V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
mΩ
S 1
V
2
A
420
525
630
pF
65
95
125
pF
45
75
105
pF
0.8
1.7
2.6
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
12.5
nC
Qg(4.5V) Total Gate Charge
6
nC
1
nC
Qgs
Gate Source Charge
VGS=10V, VDS=10V, ID=6A
Qgd
Gate Drain Charge
2
nC
tD(on)
Turn-On DelayTime
3
ns
tr
Turn-On Rise Time
7.5
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=10V, RL=1.7Ω, RGEN=3Ω
20
ns
6
ns
IF=6A, dI/dt=100A/µs
14
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
6
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2. 0: August 2013
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AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40
20 10V
3.5V 15
2.5V
4.5V
ID(A)
ID (A)
30
VDS=5V
20
10
1.8V
125°C 5
10
25°C
VGS=3.5V 0
0 0
1
2
3
4
0
5
60
1
1.5
2
2.5
1.8 Normalized On-Resistance
55 50 45 RDS(ON) (mΩ Ω)
0.5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
VGS=1.8V
40 35
VGS=2.5V
30 25
VGS=4.5V
20 15
VGS=4.5V ID=5A
VGS=2.5V ID=4A
1.6 1.4
17 VGS=1.8V 5 ID=2A
1.2
2 10 =10V
VGS ID=6A
1
VGS=10V
10
0.8 0
5
0
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
45
1.0E+02 ID=6A
1.0E+01
40
40
1.0E+00
30
IS (A)
RDS(ON) (mΩ Ω)
35 125°C
25
125°C
1.0E-01 1.0E-02
25°C
1.0E-03
20
1.0E-04
25°C
1.0E-05
15 0
2
4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.2. 0: August 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO3420
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
1000 VDS=10V ID=6A 800 Capacitance (pF)
VGS (Volts)
8
6
4
600
400 Coss
2
200
0
0 0
5 10 Qg (nC) Figure 7: Gate-Charge Characteristics
Ciss
15
Crss 0
5 10 15 VDS (Volts) Figure 8: Capacitance Characteristics
20
10000
100.0
TA=25°C
RDS(ON) limited
1000
10µs Power (W)
ID (Amps)
10.0
100µs 1.0
1ms 10ms
0.1
100
10
10s
TJ(Max)=150°C TA=25°C
DC 1
0.0
0.00001 0.01
0.1
1 VDS (Volts)
10
Zθ JA Normalized Transient Thermal Resistance
1
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10
0.001
100
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1 PD PD
0.01
Ton Ton T T
Single Pulse 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2. 0: August 2013
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AO3420
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf t o ff
D iode R ecovery T est C ircuit & W aveform s Q rr = -
V ds +
Idt
DUT V gs
V ds -
Isd V gs
Ig
Rev.2. 0: August 2013
L
Isd
+ VD C
-
IF
t rr
dI/dt I RM
V dd
V dd V ds
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