Transcript
AO3421E 30V P-Channel MOSFET
General Description
Product Summary
The AO3421E combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
ID (at VGS=-10V)
-30V -3A
RDS(ON) (at VGS=-10V)
< 95mΩ
RDS(ON) (at VGS=-4.5V)
< 160mΩ
Typical ESD protection
HBM Class 2
VDS
SOT23 Top View
D
Bottom View
D
D
G G
S
S S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage Continuous Drain Current
VGS TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 0: April 2012
Steady-State Steady-State
A
1.4
W
0.9
TJ, TSTG
Symbol t ≤ 10s
V
-18
PD
TA=70°C
±20 -2
IDM TA=25°C
Power Dissipation B
Units V
-3
ID
TA=70°C
Maximum -30
RθJA RθJL
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-55 to 150
Typ 70 100 63
°C
Max 90 125 80
Units °C/W °C/W °C/W
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AO3421E
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30 -1 TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±16V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=-250µA
-1.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-18
VGS=-10V, ID=-3A Static Drain-Source On-Resistance
TJ=125°C VGS=-4.5V, ID=-2A
gFS
Forward Transconductance
VDS=-5V, ID=-3A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Max
VGS=0V, VDS=-15V, f=1MHz
Units V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
µA
±10
µA
-2
-2.5
V
78
95
112
135
120
160
mΩ
-1
V
-1.5
A
A
6 -0.8
mΩ
S
215
pF
46.5
pF
27.5
pF
9.5
19
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
4.6
8
nC
Qg(4.5V) Total Gate Charge
2.2
4
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-3A
VGS=-10V, VDS=-15V, RL=5Ω, RGEN=3Ω
0.85
nC
1.2
nC
8
ns
4
ns
13.5
ns
tf
Turn-Off Fall Time
4
ns
trr
Body Diode Reverse Recovery Time
IF=-3A, dI/dt=500A/µs
9
Qrr
Body Diode Reverse Recovery Charge IF=-3A, dI/dt=500A/µs
16
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: April 2012
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AO3421E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20
10
-10V
VDS=-5V
-6V -7V
8 -5V 6
-4.5V
-ID(A)
-ID (A)
15
10
5
-4V
4
-3.5V
2
125°C
25°C
VGS=-3.0V 0
0 0
1
2
3
4
0
5
150 Normalized On-Resistance
VGS=-4.5V
130 RDS(ON) (mΩ Ω)
2
3
4
5
6
1.8
140
120 110 100 90
VGS=-10V
80
1.6
VGS=-10V ID=-3A
1.4
17 5 2 VGS=-4.5V 10
1.2
ID=-2A
1 0.8
70 0
1
0
2
3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
250
1.0E+01 ID=-3A
230
1.0E+00
210
40
190
1.0E-01
170 150
-IS (A)
RDS(ON) (mΩ Ω)
1
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
125°C
1.0E-02
125°C
130 1.0E-03
110 90
1.0E-04
70
25°C
25°C 1.0E-05
50 2
6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: April 2012
4
10
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO3421E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
300 VDS=-15V ID=-3A
250 Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
200 150 100
2
Coss
50
0
Crss
0 0
1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics
5
0
5
10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
30
10000
100.0
TA=25°C
10µs RDS(ON) limited
100µs
1.0
1ms 10ms
1000 Power (W)
-ID (Amps)
10.0
100
10
0.1
TJ(Max)=150°C TA=25°C
10s DC 1
0.0
0.00001 0.01
0.1
1 -VDS (Volts)
10
0.001
0.1
10
1000
100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1 PD 0.01 Single Pulse
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: April 2012
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AO3421E
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev 0: April 2012
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
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