Transcript
AO3423 20V P-Channel MOSFET
General Description
Product Summary
The AO3423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.
VDS
-20V
ID (at VGS=-10V)
-2A
RDS(ON) (at VGS= -10V)
< 92mΩ
RDS(ON) (at VGS= -4.5V)
< 118mΩ
RDS(ON) (at VGS= -2.5V)
< 166mΩ
Typical ESD protection
HBM Class 2
SOT23 Top View
Bottom View
D
D
D
G G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current
C
Power Dissipation B
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 5: Nov 2011
Steady-State Steady-State
A
1.4
W
0.9
TJ, TSTG
Symbol t ≤ 10s
V
-17
PD
TA=70°C
±12 -2
IDM TA=25°C
Units V
-2
ID
TA=70°C
Maximum -20
RθJA RθJL
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-55 to 150
Typ 65 85 43
°C
Max 90 125 60
Units °C/W °C/W °C/W
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AO3423
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20 -1 TJ=55°C
-5 ±10
µA V
76
92
99
119
VGS=-4.5V, ID=-2A
94
118
mΩ
VGS=-2.5V, ID=-1A
128
166
mΩ
6.8
VDS=VGS, ID=-250µΑ
-0.5
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-17
VGS=-10V, ID=-2A TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-2A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
µA
-1.2
VDS=0V, VGS= ±12V
Gate Threshold Voltage
Crss
Units
-0.85
Gate-Body leakage current
VGS(th)
Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=-4.5V, VDS=-10V, ID=-2A
A
-0.76
mΩ
S -1
V
-1.5
A
250
325
400
pF
40
63
85
pF
22
37
52
pF
11.2
17
Ω
3.2
4.5
nC
0.6
nC
0.9
nC
11
ns
VGS=-10V, VDS=-10V, RL=5Ω, RGEN=3Ω
5.5
ns
22
ns
8
ns
IF=-2A, dI/dt=100A/µs
6.1
Body Diode Reverse Recovery Charge IF=-2A, dI/dt=100A/µs
1.4
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: Nov 2011
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AO3423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25
10 -10V
-6V
-8V
VDS=-5V -4V
-5V
20
8
-3.5V 6 -ID(A)
-ID (A)
15 -3V 10
4
-2.5V 2
5
VGS=-1.5V
0 0
1
2
3
4
25°C
0 0
5
-VDS (Volts) Fig 1: On-Region Characteristics (Note E) 180
1
2 3 -VGS(Volts) Figure 2: Transfer Characteristics (Note E)
4
Normalized On-Resistance
1.6
160 VGS=-2.5V 140 RDS(ON) (mΩ Ω)
125°C
-2V
120 VGS=-4.5V 100 80 VGS=-10V
60
ID=-2A, VGS=-4.5V 1.4
ID=-2A, VGS=-10V
1.2 ID=-1A, VGS=-2.5V 1.0
0.8
40 0
2
0
4
6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
200
1.0E+01 ID=-2A
180
1.0E+00 1.0E-01
140 120 125°C 100
-IS (A)
RDS(ON) (mΩ Ω)
160 125°C
25°C
1.0E-02 1.0E-03
80 25°C
1.0E-04
60 40
1.0E-05 0
4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 5: Nov 2011
2
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0.0
0.2
0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO3423
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600
5 VDS=-10V ID=-2A
450 Capacitance (pF)
-VGS (Volts)
4
3
2
Ciss 300
150
Coss
1 Crss
0
0 0
1
2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics
0
5
100.0
5
10 15 -VDS (Volts) Figure 8: Capacitance Characteristics
1000 TJ(Max)=150°C TA=25°C
10µs RDS(ON) limited
100µs
Power (W)
10.0
-ID (Amps)
20
1ms
1.0
10ms DC
0.1
100ms 10s
TJ(Max)=150°C TA=25°C
0.0 0.01
100
10
1
0.1
1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.00001
0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
100
0.001
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W 1
0.1
PD Single Pulse
Ton
T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 5: Nov 2011
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AO3423
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT Vgs Ig
Charge
R esistive Sw itching Test C ircuit & W aveform s RL V ds
t o ff
to n
Vgs
-
DUT
Vgs
V DC
td(o n)
t d(o ff)
tr
tf
90%
V dd
+
Rg
V gs
10% V ds
D iode R e covery Te st C ircuit & W aveform s Q rr = -
V ds +
Idt
DUT V gs
Vds Isd V gs Ig
Rev 5: Nov 2011
L
-Isd
+ V dd
t rr
dI/dt -I R M V dd
VDC
-
-I F
-Vds
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