Transcript
AO3442 100V N-Channel MOSFET
General Description
Product Summary
The AO3442 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting.
VDS
100V 1A
ID (at VGS=10V) RDS(ON) (at VGS=10V)
< 630mΩ
RDS(ON) (at VGS=4.5V)
< 720mΩ
SOT23 Top View
D
Bottom View
D
D
G
S
G S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current Power Dissipation
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 0: Jun 2012
Steady-State Steady-State
A
1.4
W
0.9
TJ, TSTG
Symbol t ≤ 10s
V
4
PD
TA=70°C
±20 0.8
IDM TA=25°C
B
Units V
1
ID
TA=70°C C
Maximum 100
RθJA RθJL
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°C
-55 to 150
Typ 70 100 63
Max 90 125 80
Units °C/W °C/W °C/W
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AO3442
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS
Conditions
Min
ID=250µA, VGS=0V
100
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
1 TJ=55°C
±100
nA
2.3
2.9
V
514
630
983
1200
VGS=4.5V, ID=0.8A
554
720
Static Drain-Source On-Resistance
1.7 4 TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=1A
2.8
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.9
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Units
µA
5
VGS=10V, ID=1A
Coss
Max
V
VDS=100V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=50V, f=1MHz
mΩ mΩ S
1.2
V
1
A
100
pF
13
pF
5
pF
5
7.5
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
2.8
6
nC
Qg(4.5V) Total Gate Charge
1.5
3
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=50V, ID=1A
2.5
0.4
nC
0.8
nC
5
ns
4
ns
12
ns
5
ns
52
ns nC
VGS=10V, VDS=50V, RL=50Ω, RGEN=3Ω IF=5.6A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=5.6A, dI/dt=100A/µs
60
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Jun 2012
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AO3442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 3
5
VDS=5V
10V
6V
2.5
5V
4
4.5V
2
ID (A)
ID(A)
3
2
1.5
3.5V
1
1
125°C 25°C
0.5
VGS=3.0V
0
0 0
1
2
3
4
0
5
1200
2
3
4
5
6
Normalized On-Resistance
2.4
1000 RDS(ON) (mΩ Ω)
1
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
800 600
VGS=10V
400 200
2.2
VGS=10V ID=1A
2 1.8
17 5 2 10
1.6 1.4 1.2
VGS=4.5V ID=0.8A
1 0.8
0 0
0.5
0
1
1.5 2 2.5 3 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1200
1.0E+01 ID=1A 1.0E+00
40
125°C
1.0E-01 IS (A)
RDS(ON) (mΩ Ω)
900
600
125°C
1.0E-02 25°C
1.0E-03
25°C 300
1.0E-04 1.0E-05
0 2
6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: Jun 2012
4
10
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO3442
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
160 VDS=50V ID=1A
140
8 Capacitance (pF)
VGS (Volts)
120 6
4
Ciss
100 80 60 40
Crss
2
Coss
20 0
0 0
0.5
1
1.5 2 2.5 Qg (nC) Figure 7: Gate-Charge Characteristics
3
0
20
40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics
100
10000
10.0
TA=25°C
10µs
ID (Amps)
100µs 1ms
0.1
DC TJ(Max)=150°C TA=25°C
0.0
Power (W)
1000
RDS(ON) limited
1.0
100
10ms
10
10s
1 1E-05
0.01
0.1
1 10 VDS (Volts)
100
0.001
0.1
10
1000
1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=125°C/W
0.1
PD
0.01 Single Pulse
Ton
T
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Jun 2012
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AO3442
Gate Charge Test Circuit & Waveform Vgs Qg
10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf t o ff
D iode R ecovery T est C ircuit & W aveform s Q rr = -
V ds +
Idt
DUT V gs
V ds -
Isd V gs
Ig
Rev 0: Jun 2012
L
Isd
+ VD C
-
IF
t rr
dI/dt I RM
V dd
V dd V ds
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