Transcript
AO4262E 60V N-Channel MOSFET
General Description
Product Summary
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • ESD protected
ID (at VGS=10V)
60V 16.5A
VDS
Applications
RDS(ON) (at VGS=10V)
< 6.5mΩ
RDS(ON) (at VGS=4.5V)
< 8.5mΩ
Typical ESD protection
HBM Class 2
100% UIS Tested 100% Rg Tested
• High efficiency power supply • Secondary synchronus rectifier
SOIC-8 Top View D D
D
Bottom View
D D G G S
S
S S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO4262E
SO-8
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage
Symbol VDS
Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current C Avalanche energy VDS Spike
G
Power Dissipation B
L=0.3mH
C
10µs TA=25°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev.1.0: January 2016
23
A
EAS
79
mJ
72
V
3.1
Steady-State Steady-State
W
2.0
TJ, TSTG
Symbol t ≤ 10s
A
IAS
PD
Junction and Storage Temperature Range
V
65
VSPIKE
TA=70°C
±20 13.0
IDM
Avalanche Current C
Units V
16.5
ID
TA=70°C
Maximum 60
RθJA RθJL
-55 to 150
Typ 31 59 16
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°C
Max 40 75 24
Units °C/W °C/W °C/W
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AO4262E
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V 1
TJ=55°C 1.2
±10
µA
1.65
2.2
V
5.2
6.5
8.3
10.5 8.5
RDS(ON)
Static Drain-Source On-Resistance VGS=4.5V, ID=14.5A
6.6
gFS
Forward Transconductance
VDS=5V, ID=16.5A
70
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz f=1MHz
µA
5
VGS=10V, ID=16.5A
Coss
Units
60
VDS=60V, VGS=0V
IDSS
Max
mΩ S
1
V
4
A
1650
pF
520
pF
52
pF
1.3
2.0
Ω
SWITCHING PARAMETERS Total Gate Charge Qg(10V)
30
45
nC
Qg(4.5V)
Total Gate Charge
15
25
Qgs
Gate Source Charge
Qgd tD(on) tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=30V, ID=16.5A
0.6
mΩ
nC
3.5
nC
Gate Drain Charge
6.5
nC
Turn-On DelayTime
6
ns
5
ns
29
ns
VGS=10V, VDS=30V, RL=1.8Ω, RGEN=3Ω
7
ns
IF=16.5A, di/dt=500A/µs
19
Body Diode Reverse Recovery Charge IF=16.5A, di/dt=500A/µs
60
ns nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The spike duty cycle 5% max, limited by junction temperature TJ(MAX)=125°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: January 2016
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AO4262E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60
60
3.5V 50
VDS=5V
4.5V
50
10V 3V
40 ID (A)
ID (A)
40 30 20
30 125°C
20 VGS=2.5V
10
25°C
10 0
0 0
1
2
3
4
1
5
3
4
5
VGS (Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Figure 1: On-Region Characteristics (Note E) 10 Normalized On-Resistance
2
VGS=4.5V
8 RDS(ON) (mΩ)
2
6 VGS=10V 4
1.8 VGS=10V ID=16.5A
1.6 1.4 1.2
VGS=4.5V ID=14.5A
1 0.8
2 0
3
6
9
12
0
15
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 20
1.0E+01 ID=16.5A 1.0E+00 125°C
1.0E-01 IS (A)
RDS(ON) (mΩ)
15
125°C 10
1.0E-02 25°C 1.0E-03
5 25°C
1.0E-04
0
1.0E-05 2
4
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.1.0: January 2016
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0.0
0.2
0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
1.0
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AO4262E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
2500 VDS=30V ID=16.5A 2000 Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss 1500
1000 Coss 500
0
Crss
0 0
5
10
15
20
25
30
35
0
Qg (nC) Figure 7: Gate-Charge Characteristics
10µs 10µs
40
50
60
1.0
TJ(Max)=150°C TA=25°C
100µs
1ms
0.1
30
1000
10ms TJ(Max)=150°C TA=25°C
Power (W)
ID (Amps)
10.0
20
VDS (Volts) Figure 8: Capacitance Characteristics
100.0
RDS(ON) limited
10
100
10
DC 0.0 0.01
0.1
1 VDS (Volts)
10
100
1 0.0001 0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
VGS> or equal to 4.5V
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
ZθJA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1 PDM
0.01
Single Pulse Ton T
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: January 2016
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AO4262E
Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf toff
Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Rev.1.0: January 2016
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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