Transcript
AO4266 60V N-Channel MOSFET
General Description
Product Summary VDS
• Trench Power MV MOSFET technology • Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications
Applications
ID (at VGS=10V)
60V 10A
RDS(ON) (at VGS=10V)
< 15mΩ
RDS(ON) (at VGS=4.5V)
< 19mΩ
100% UIS Tested 100% Rg Tested
• Synchronus Rectification in DC/DC and AC/DC Converters • Industrial and Motor Drive applications
SOIC-8 Top View D D
Bottom View
D
D D
G
G S
S
S S
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO4266
SO-8
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage
Symbol VDS VGS
Gate-Source Voltage TA=25°C
Continuous Drain Current Pulsed Drain Current Avalanche energy
L=0.1mH
VDS Spike Power Dissipation
B
C
10µs TA=25°C
Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead
Rev.1.0: June 2014
20
A
EAS
20
mJ
72
V
3.1
Steady-State
TJ, TSTG
Steady-State
RθJA RθJL
W
2.0
Symbol t ≤ 10s
A
IAS
PD
Junction and Storage Temperature Range
V
40
VSPIKE
TA=70°C
±20 8
IDM
Avalanche Current C
Units V
10
ID
TA=70°C C
Maximum 60
-55 to 150
Typ 31 59 16
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°C
Max 40 75 24
Units °C/W °C/W °C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V 1
TJ=55°C 1.5
±100
nA
2.0
2.5
V
12
15
20.5
25 19
RDS(ON)
Static Drain-Source On-Resistance VGS=4.5V, ID=9A
15
gFS
Forward Transconductance
VDS=5V, ID=10A
35
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
0.72
DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=30V, f=1MHz f=1MHz
µA
5
VGS=10V, ID=10A
Coss
Units
60
VDS=60V, VGS=0V
IDSS
Max
0.7
mΩ mΩ S
1
V
4
A
1340
pF
123
pF
10
pF
1.5
2.3
Ω
SWITCHING PARAMETERS Total Gate Charge Qg(10V)
21
30
nC
Qg(4.5V)
Total Gate Charge
9
15
nC
Qgs
Gate Source Charge
4.7
nC
Qgd
Gate Drain Charge
2.6
nC
tD(on)
Turn-On DelayTime
6
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time
Qrr
VGS=10V, VDS=30V, ID=10A
VGS=10V, VDS=30V, RL=3.0Ω, RGEN=3Ω
2.5
ns
22
ns
2.5
ns
IF=10A, dI/dt=500A/µs
15.5
Body Diode Reverse Recovery Charge IF=10A, dI/dt=500A/µs
55.5
ns nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: June 2014
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50
50
4V
10V
VDS=5V
4.5V
40
40
6V 3.5V
30 ID(A)
ID (A)
30
20
20
10
10 VGS=3V 1
2
3
4
1
5
2
2
18
1.8
Normalized On-Resistance
RDS(ON) (mΩ)
20
VGS=4.5V
14 12 VGS=10V
10
3
4
5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Figure 1: On-Region Characteristics (Note E)
16
25°C
0
0 0
125°C
VGS=10V ID=10A
1.6 1.4 1.2
VGS=4.5V ID=9A
1 0.8
8 0
3
6
9
12
0
15
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 40
1.0E+01 ID=10A 1.0E+00 125°C
1.0E-01
125°C IS (A)
RDS(ON) (mΩ)
30
20
1.0E-02 25°C 1.0E-03
10
25°C 1.0E-04
0
1.0E-05 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.1.0: June 2014
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
1800 VDS=30V ID=10A
1600 Ciss
1400 Capacitance (pF)
VGS (Volts)
8
6
4
1200 1000 800 600 400
2
200 0
0 0
5
10
15
20
25
0
Qg (nC) Figure 7: Gate-Charge Characteristics
20
30
40
50
60
1000 TJ(Max)=150°C TA=25°C
1ms 1.0
10ms
Power (W)
10µs 10µs 100µs
RDS(ON) limited
10.0
0.1
10
VDS (Volts) Figure 8: Capacitance Characteristics
100.0
ID (Amps)
Coss
Crss
100
10
TJ(Max)=150°C TA=25°C DC
0.0 0.01
1 0.0001 0.001 0.01
0.1
1 10 100 1000 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
ZθJA Normalized Transient Thermal Resistance
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
10
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
1
0.1
RθJA=75°C/W
0.1 PD
0.01
Single Pulse
Ton T
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: June 2014
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Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Rev.1.0: June 2014
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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