Transcript
AO4408 N-Channel Enhancement Mode Field Effect Transistor General Description
Features
The AO4408/L uses advanced trench technology to provide excellent RDS(ON), low gate charge and fast switching. This device makes an excellent high side switch for notebook CPU core DC-DC conversion. AO4408 and AO4408L are electrically identical. -RoHS Compliant -AO4408L is Halogen Free
VDS (V) = 30V (VGS = 10V) ID = 12A RDS(ON) < 13mΩ (VGS = 10V) RDS(ON) < 16mΩ (VGS = 4.5V) UIS Tested Rg,Ciss,Coss,Crss Tested
D D D D D
S S S G
G S
SOIC-8
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS
Gate-Source Voltage
Pulsed Drain Current
TA=70°C B
Avalanche Current B B
Repetitive Avalanche Energy L=0.3mH TA=25°C Power Dissipation
±12
V
Junction and Storage Temperature Range
10
IAV
30
A
EAV
135
mJ
80
3
W
2.1
TJ, TSTG
°C
-55 to 150
Symbol t ≤ 10s Steady-State Steady-State
Alpha & Omega Semiconductor, Ltd.
A
ID IDM
PD
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A A Maximum Junction-to-Ambient C Maximum Junction-to-Lead
Units V
12
TA=25°C
Continuous Drain AF Current
Maximum 30
RθJA RθJL
Typ 23 48 12
Max 40 65 16
Units °C/W °C/W °C/W
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AO4408
Electrical Characteristics (T J=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±12V
30 TJ=55°C
5
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
On state drain current
VGS=4.5V, VDS=5V
40
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=12A TJ=125°C VGS=4.5V, ID=10A gFS
Forward Transconductance
VSD
Diode Forward Voltage IS=10A,VGS=0V Maximum Body-Diode Continuous Current
VDS=5V, ID=10A
30
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg Total Gate Charge Qgs Gate Source Charge Qgd
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=12A
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω
nA
2.5
V A
10.5
14
16
21
13
16.5
48
mΩ S
1
V A
1200
pF
80
112
pF
0.25
0.5
Ω
10.3
12.5
nC
320 0.13
mΩ
4.5 1020
VGS=0V, VDS=15V, f=1MHz
Gate Drain Charge
tD(on)
1.5
µA
100
0.76
DYNAMIC PARAMETERS Ciss Input Capacitance
Units V
1
ID(ON)
Coss
Max
VDS=30V, VGS=0V
IDSS
IS
Typ
pF
2.1
nC
3.9
nC
3.9
5.5
ns
3
6
ns
19.2
30
ns
2.6
5
ns
32 32
ns nC
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=12A, dI/dt=100A/µs
26
Qrr
Body Diode Reverse Recovery Charge IF=12A, dI/dt=100A/µs
18
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. F. The current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev8: July 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50
10V
40
VDS=5V
25
3.5V
3V 20
30 ID(A)
ID (A)
30
4.5V
20
15 125°C
10 10
5
VGS=2.5V
25°C
0 0
1
2
3
4
0
5
0.5
1
VDS (Volts) Fig 1: On-Region Characteristics
1.5
2.5
3
VGS(Volts) Figure 2: Transfer Characteristics
16
1.8 VGS=10V
14
Normalized On-Resistance
ID=10A
RDS(ON) (mΩ)
2
VGS=4.5V
12
10
VGS=10V
1.6 VGS=4.5V 1.4
1.2
1
8 0
5
10
15
20
0.8
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
40
0
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 1.0E+01
ID=10A
VGS=0V
1.0E+00
125°C
30
100 1.0E-01 IS (A)
RDS(ON) (mΩ)
25
125°C 20
1.0E-02 25°C
1.0E-03 25°C
10
1.0E-04 1.0E-05
0 0
2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics
1.0
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AO4408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5
1500
VDS=15V ID=12A
1250 Capacitance (pF)
VGS (Volts)
4 3 2 1
Ciss
1000 750 Coss
500 250
Crss
0 0
2
4
6
8
10
0
12
0
Qg (nC) Figure 7: Gate-Charge Characteristics
5
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
100.0 50
10µs 1ms
10.0
100µs
ID (Amps)
10ms 0.1s 1s
1.0
1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
ZθJA Normalized Transient Thermal Resistance
10
20
0 0.001
DC
D=T on/T TJ,PK=T A+PDM.ZθJA.RθJA RθJA=40°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
0.1 0.1
30
10
10s TJ(Max)=150°C TA=25°C
TJ(Max)=150°C TA=25°C
40 Power (W)
RDS(ON) limited
100
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
100
1
PD
0.1
0.01 0.00001
Ton
Single Pulse
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
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AO4408
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4 TA=25°C
60
Power Dissipation (W)
ID(A), Peak Avalanche Current
70
50 40 30
tA =
L ⋅ ID BV − VDD
20 10 0 0.00001
0.0001 Time in avalanche, tA (s) Figure 12: Avalanche capability
Alpha & Omega Semiconductor, Ltd.
0.001
3
2
10s
1
SteadyState
0 25
50
75
100
125
150
TCASE (°C) Figure 13: Power De-rating (Note A)
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AO4408
Gate Charge Test Circuit & Waveform Vgs
Qg 10V
+ VDC
+ Vds
-
VDC
DUT
Qgs
Qgd
-
Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL
Vds Vds
Rg
DUT
Vgs
+
VDC
-
90%
Vdd 10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
EAR= 1/2 LI
Vds
2 AR
BVDSS
Vds
Id
+
Vgs
Vgs
VDC
Rg
-
Vdd
I AR
Id
DUT
Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Qrr = - Idt
Vds +
DUT
Vds -
Isd
Vgs
L
Vgs Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+
VDC
-
IF
trr
dI/dt IRM
Vdd
Vds
Vdd
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