Transcript
AO4413 30V P-Channel MOSFET
General Description
Product Summary
• The AO4413 uses advanced trench technology to provide excellent RDS(ON), and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications.
ID (at VGS=-20V)
VDS
-30V -15A
RDS(ON) (at VGS=-20V)
< 7mΩ
RDS(ON) (at VGS = -10V)
< 8.5mΩ
• RoHS and Halogen-Free Compliant 100% UIS Tested 100% Rg Tested
SOIC-8 Top View D D
D Bottom View
D D G G S
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current
C
Units V
±25
V
-15
ID
TA=70°C
Maximum -30
-12.8
IDM
A
-120
Avalanche Current C
IAS, IAR
50
A
Avalanche energy L=0.1mH C TA=25°C
EAS, EAR
125
mJ
Power Dissipation B
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 9: Jan 2010
3.1
PD
TA=70°C
TJ, TSTG
Symbol t ≤ 10s Steady-State Steady-State
W
2
RθJA RθJL
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-55 to 150
Typ 31 59 16
°C
Max 40 75 24
Units °C/W °C/W °C/W
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AO4413
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30 -1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-120
TJ=55°C
-5
VDS=0V, VGS= ±25V
±100
VGS=-20V, ID=-15A
9
VGS=-10V, ID=-15A
6.4
8.5
VDS=-5V, ID=-15A
35
Forward Transconductance
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance
Rg
Gate resistance
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=-10V, VDS=-15V, ID=-15A
Units
µA nA V A
7.5
gFS
Reverse Transfer Capacitance
-3.5 7
Static Drain-Source On-Resistance
Output Capacitance
-2.5 5.3
RDS(ON)
Coss
Max
V
VDS=-30V, VGS=0V
IDSS
Crss
Typ
-0.7
mΩ mΩ S
-1
V
-4
A
2310
2890
3500
pF
410
585
760
pF
280
470
660
pF
1.9
3.8
5.7
Ω
40
51
61
nC
10
12
14
nC
10
16
22
nC
16 VGS=-10V, VDS=-15V, RL=1.0Ω, RGEN=3Ω
ns
12
ns
45
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-15A, dI/dt=100A/µs
14
18
22 22
ns
Qrr
Body Diode Reverse Recovery Charge IF=-15A, dI/dt=100A/µs
9
11
13
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 9: Jan 2010
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AO4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100 -10V
VDS=-5V
-6V 80
80 -5V
60 -ID(A)
-ID (A)
60
40
40
-4.5V
125°C
25°C
20
20 VGS=-4V
0
0 0
1
2
3
4
1.5
5
10
3
3.5
4
4.5
5
5.5
6
Normalized On-Resistance
1.6
VGS=-10V
8 RDS(ON) (mΩ)
2.5
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
6
4 VGS=-20V 2
VGS=-20V ID=-15A 1.4
1.2 VGS=-10V ID=-15A 1
0.8 0
5
10
15
20
25
30
0
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
20
1.0E+02 ID=-15A
1.0E+01
40
15
125°C
1.0E+00
25°C -IS (A)
RDS(ON) (mΩ)
2
125°C
10
1.0E-01 1.0E-02 1.0E-03
5
1.0E-04
25°C
1.0E-05
0 0
5
10
15
20
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 9: Jan 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
5000 VDS=-15V ID=-15A 4000 Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
3000
2000 Coss
2
1000
0
0
Crss 0
10
20
30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics
0
60
-IAR (A) Peak Avalanche Current
1000.0
5
10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
30
1000.0 100.0
-ID (Amps)
TA=25°C TA=100°C
100.0 TA=150°C
10.0
0.1
100
1ms 10ms
0.0 0.01
10.0 10
100µs
1.0
TA=125°C
1
10µs
RDS(ON) limited
1000
TJ(Max)=150°C TA=25°C
DC
0.1
1
10s
10
100
-VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F)
Time in avalanche, tA (µs) Figure 9: Single Pulse Avalanche capability (Note C)
10000 TA=25°C
Power (W)
1000
100
10
1 0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 9: Jan 2010
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AO4413
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
ZθJA Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1 PD
0.01
Single Pulse Ton
0.001 0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 9: Jan 2010
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AO4413
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 9: Jan 2010
Vgs
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
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