Transcript
AO4452 100V N-Channel MOSFET SDMOS TM General Description
Product Summary
The AO4452 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
VDS ID (at VGS=10V)
100V 8A
RDS(ON) (at VGS=10V)
< 25mΩ
RDS(ON) (at VGS = 7V)
< 31mΩ
100% UIS Tested 100% Rg Tested
SOIC-8 Top View D D
D Bottom View
D D G G S
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current C
Units V
±25
V
8
ID
TA=70°C
Maximum 100
6.5
A
IDM
57
Avalanche Current C
IAR
28
A
Repetitive avalanche energy L=0.1mH C TA=25°C
EAR
39
mJ
Pulsed Drain Current
Power Dissipation B
TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 3: May 2012
3.1
PD TJ, TSTG
Symbol t ≤ 10s Steady-State Steady-State
W
2
RθJA RθJL
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-55 to 150
Typ 31 59 16
°C
Max 40 75 24
Units °C/W °C/W °C/W
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AO4452
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
100 10 TJ=55°C
50
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
Gate Threshold Voltage
VDS=VGS ID=250µA
2
ID(ON)
On state drain current
VGS=10V, VDS=5V
60
nA
4
V
20.5
25
36
43
VGS=7V, ID=6.5A
25
31
mΩ
1
V
5
A
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=8A
23
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.66
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
S
1400
1770
2200
pF
115
165
215
pF
33
55
80
pF
VGS=0V, VDS=0V, f=1MHz
0.3
0.65
1.0
Ω
14
28
42
nC
4
9
14
nC
10
14
nC
VGS=10V, VDS=50V, ID=8A
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
11
16
21
42
60
78
trr
IF=8A, dI/dt=500A/µs Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs IF=8A, dI/dt=100A/µs Body Diode Reverse Recovery Time
21
27
33
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
20
28
36
Qrr
mΩ
VGS=0V, VDS=50V, f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs
µA
100
Static Drain-Source On-Resistance
Output Capacitance
Units
3.2
VGS=10V, ID=8A
Coss
Max
V
VDS=100V, VGS=0V
VGS(th)
RDS(ON)
Typ
6 VGS=10V, VDS=50V, RL=6Ω, RGEN=3Ω
12
ns
4
ns
17
ns
5
ns ns nC ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: May 2012
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AO4452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60
60 8V
10V
50
7V
40
40
30
ID(A)
ID (A)
VDS=5V
50
6.5V
125°C
30 20
20
25°C 10
10
VGS=6V
0
0 0
1
2
3
4
3
5
5
6
7
2.2 Normalized On On-Resistance
40 35 VGS=7V RDS(ON) (mΩ Ω)
4
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
30 25
VGS=10V
20 15
2 VGS=10V ID=8A
1.8 1.6 1.4 1.2
VGS=7V ID=6.5A
1
17 5 2 10
0.8
10 0
6
0
12
18 24 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
0
175
Temperature (°C) 18Temperature Figure 4: On-Resistance vs. Junction (Note E)
45
1.0E+02 ID=8A 1.0E+01
40
125°C
125°C IS (A)
RDS(ON) (mΩ Ω)
40 1.0E+00
35 30
1.0E-01 1.0E-02
25
25°C
25°C 1.0E-03
20 1.0E-04 15 6
8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 3: May 2012
7
1.0E-05
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO4452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
2500 VDS=50V ID=8A
Ciss
2000 Capacitance (pF)
VGS (Volts)
8
6
4
1500
1000 Crss
2
500
0
Coss
0 0
5
10
15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics
30
0
20
40 60 80 VDS (Volts) Figure 8: Capacitance Characteristics
100
IAR (A) Peak Avalanche Current
100
100.0
ID (Amps)
TA=25°C TA=100°C
100µs
1.0
1ms
TA=150°C
TJ(Max)=150°C TA=25°C
0.1
TA=125°C
10µs
RDS(ON) limited
10.0
10ms DC
10s
0.0
10
0.01
0.000001
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C)
0.1
1
10
100
VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F)
10000 TA=25°C
Power (W)
1000
100
10
1 0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 3: May 2012
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AO4452
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
RθJA=75°C/W
0.1 PD
0.01 Single Pulse
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
300
15 di/dt=800A/µs
di/dt=800A/µs
125ºC
250
1.6
125ºC
150
6
trr
25ºC
1.2
trr (ns)
12
S
9
25ºC
Irm (A)
16
200
125ºC
20
12
Irm Qrr (nC)
2
24
0.8 8
100
125ºC
3 Qrr
4
25ºC
50
0 0
5
10
15
20
25
25ºC
0
30
0
IS (A) Figure 13: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 150
30
25ºC
Irm 0 0
200
400
600
800
125ºC
Is=20A 2
25ºC
S
15 10
2
5
-2
0
1000
di/dt (A/µ µs) Figure 15: Diode Reverse Recovery Charge and Peak Current vs. di/dt
Rev 3: May 2012
3
20
6
30
30
40
10
Qrr
0 25
trr (ns)
14
125ºC
20
IS (A) Figure 14: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current
25
22 18
90
15
trr
Irm (A)
Qrr (nC)
25ºC
10
30
125ºC
120
60
5
26
Is=20A
0.4
S
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125ºC
25ºC
1
S 0 0
200
400
600
800
1000
di/dt (A/µ µs) Figure 16: Diode Reverse Recovery Time and Softness Factor vs. di/dt
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AO4452
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev 3: May 2012
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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