Transcript
AO4459 30V P-Channel MOSFET
General Description
Product Summary
The AO4459 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is ideal for load switch and battery protection applications.
ID (at VGS=-10V)
-30V -6.5A
RDS(ON) (at VGS=-10V)
< 46mΩ
RDS(ON) (at VGS = -4.5V)
< 72mΩ
VDS
100% UIS Tested 100% Rg Tested
SOIC-8 Top View D D
D Bottom View
D D G G S
S S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current C
Units V
±20
V
-6.5
ID
TA=70°C
Maximum -30
-5.3
A
IDM
-30
Avalanche Current C
IAS, IAR
17
A
Avalanche energy L=0.1mH C TA=25°C
EAS, EAR
14
mJ
Pulsed Drain Current
Power Dissipation B
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 2: Nov 2011
3.1
PD
TA=70°C
TJ, TSTG
Symbol t ≤ 10s Steady-State Steady-State
W
2
RθJA RθJL
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-55 to 150
Typ 31 59 16
°C
Max 40 75 24
Units °C/W °C/W °C/W
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AO4459
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30 -1 TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
nA
-2.4
V
33
46
50
68
VGS=-4.5V, ID=-5A
53
72
14
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-6.5A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance Gate resistance
A
-0.8
DYNAMIC PARAMETERS Input Capacitance Ciss
Rg
µA
±100
Static Drain-Source On-Resistance
Output Capacitance
Units
-1.9
VGS=-10V, ID=-6.5A
Coss
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
S V
-3.5
A
520
pF
100
pF pF Ω
7.5
11.5
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
9.2
11
nC
Qg(4.5V) Total Gate Charge
4.6
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=-10V, VDS=-15V, ID=-6.5A
3.5
mΩ
-1
65 VGS=0V, VDS=0V, f=1MHz
mΩ
1.6
nC
2.2
nC
7.5
ns
VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=3Ω
5.5
ns
19
ns
7
ns
IF=-6.5A, dI/dt=100A/µs
11
Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs
5.3
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 2: Nov 2011
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AO4459
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30
40 -10V
-8V
VDS=-5V
-6V
35
25
30
-5V
20 -ID(A)
-ID (A)
25 VGS=-4.5V
20 15
15 10
-4V 10 5
VGS=-3.5V 0
0 0
1
2
3
4
0.5
5
1
1.5
2
2.5
3
3.5
4
4.5
5
5.5
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
-VDS (Volts) Fig 1: On-Region Characteristics (Note E) 80 Normalized On-Resistance
1.8
70 VGS=-4.5V
60 RDS(ON) (mΩ Ω)
25°C
125°C
5
50 40 30 VGS=-10V
20 10
VGS=-10V ID=-6.5A
1.6 1.4
17 5 VGS=-4.5V ID=-5A2 10
1.2 1 0.8
0
2
4
6
8
10
0
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
120
1.0E+02 ID=-6.5A
1.0E+01
100
40
80
-IS (A)
RDS(ON) (mΩ Ω)
1.0E+00
125°C 60
1.0E-01 25°C
125°C 1.0E-02 1.0E-03
40
1.0E-04 25°C
1.0E-05
20 2
6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 2: Nov 2011
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO4459
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
800 VDS=-15V ID=-6.5A
700
8 Ciss
Capacitance (pF)
-VGS (Volts)
600 6
4
500 400 300 Coss 200
2 100 0 0
2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics
10
0
100.0
5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
30
100.0
TA=25°C TA=100°C TA=150°
10.0 TA=125°C
10.0
-ID (Amps)
-IAR (A) Peak Avalanche Current
Crss
0
10µs 100µs
RDS(ON) limited
1ms
1.0
10ms 0.1
TJ(Max)=150°C TA=25°C
10s DC
0.0
1.0
0.01
1
10 100 1000 Time in avalanche, tA (µ µs) Figure 9: Single Pulse Avalanche capability (Note C)
0.1
1 10 -VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F)
100
10000 TA=25°C
Power (W)
1000
100
10
1 0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
Rev 2: Nov 2011
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AO4459
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=75°C/W
0.1 PD
0.01 Single Pulse
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 2: Nov 2011
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AO4459
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev 2: Nov 2011
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
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