Transcript
AO4488 30V N-Channel MOSFET
General Description
Product Summary
The AO4488 uses advanced trench technology to provide excellent RDS(ON) with low gate charge. This device is ESD protected and it is suitable for use as a load switch or in PWM applications.
VDS (V) = 30V (VGS = 10V) ID = 20A RDS(ON) < 4.6mΩ (VGS = 10V) RDS(ON) < 6.4mΩ (VGS = 4.5V) ESD Protected 100% UIS Tested 100% Rg Tested
SOIC-8 Top View
D
Bottom View
G
S Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol 10 Sec Drain-Source Voltage VDS
30
Units V
Gate-Source Voltage
±20
V
VGS TA=25°C
Continuous Drain Current A Pulsed Drain Current
TA=70°C
ID
B
Steady State
20
15
17
12
IDM
80
Avalanche Current G
IAR
50
Repetitive avalanche energy L=0.3mH G TA=25°C Power Dissipation A TA=70°C
EAR
375
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
PD
Symbol t ≤ 10s Steady State Steady State
Alpha & Omega Semiconductor, Ltd.
RθJA RθJL
mJ
3.1
1.7
2.0
1.1 -55 to 150
Typ 31 59 16
A
Max 40 75 24
W °C
Units °C/W °C/W °C/W
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AO4488
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions ID = 250µA, VGS = 0V
Min
Typ
30
35.5
VDS = 30V, VGS = 0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS = 0V, VGS = ±16V
VGS(th)
Gate Threshold Voltage
VDS = VGS ID = 250µA
1.0
On state drain current
VGS = 10V, VDS = 5V
80
TJ = 55°C
Static Drain-Source On-Resistance
TJ=125°C
IS = 1A,VGS = 0V
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance
Qg (4.5V) Total Gate Charge Gate Source Charge
0.69
5450 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg (10V) Total Gate Charge Qgs
µA
VGS=10V, VDS=15V, ID=20A
V A
72
Diode Forward Voltage
Gate resistance
4.6 6.4
VSD
Rg
3.8
6.5
IS
Output Capacitance
2.5
5.2
VDS = 5V, ID = 20A
Reverse Transfer Capacitance
1.7
5.3
Forward Transconductance
Crss
5
VGS = 4.5V, ID = 18A gFS
Coss
V
±10
VGS = 10V, ID = 20A RDS(ON)
Units
1
IDSS
ID(ON)
Max
mΩ S
1
V
3
A
6800
pF
760
pF
540
pF
1
1.5
Ω
84
112
nC
42
56
nC
12
nC
Qgd
Gate Drain Charge
21
nC
tD(on)
Turn-On DelayTime
13
ns
9.8
ns
49
ns
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/µs
42
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
31
Turn-Off Fall Time
16
ns 56
ns nC
2
A: The value of R θJA is measured with the device mounted on 1in FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA 0 curve provides a single pulse rating. F. The current rating is based on the t ≤ 10s thermal resistance rating. G. EAR and IAR ratings are based on low frequency and duty cycles to keep Tj=25C. Rev6: Nov. 2010 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4488
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30
80 10V
70 4V
60
3.5V
125°C 20 ID(A)
50 ID (A)
VDS= 5V
25
4.5V
40 30
15 25°C
10
20 5
10
-40°C
VGS= 3V 0
0 0
1
2
3
4
5
0
1
6 Normalized On-Resistance
RDS(ON) (mΩ )
3
4
1.6
5.5
VGS= 4.5V
5 4.5 VGS= 10V
4 3.5 3
VGS= 10V ID= 20A
1.4
1.2
VGS= 4.5V ID= 18A
1.0
0.8
0.6 0
4
16 20 IF12 =-6.5A, dI/dt=100A/µs
8
-50
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
16
1E+01
14
ID= 20A
1E+00
12 RDS(ON) (mΩ )
2
VGS(Volts) Figure 2: Transfer Characteristics
VDS (Volts) Figure 1: On-Region Characteristics
1E-01
10
IS (A)
125°C 1E-02 8 25°C 125°CAND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL THIS PRODUCT HAS BEEN DESIGNED 1E-03 6 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF4SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT 25°C TO IMPROVE PRODUCT DESIGN, 1E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 2 -40°C 0 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
-40°C
1E-05 1E-06 0.0
0.2
0.4
0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
1.2
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AO4488
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000
10 VDS= 15V ID= 20A
8000 Capacitance (pF)
VGS (Volts)
8
6
4
4000 Coss
2
2000
0
0
Crss 0
10
20
30
40
50
60
70
80
90
0
Qg (nC) Figure 7: Gate-Charge Characteristics
10
15
20
25
30
1000
1ms
1
10ms 100ms s10s
TJ(Max)=150°C TA=25°C
0.01 0.01
0.1
Power (W)
100µs
10
0.1
TJ(Max)=150°C TA=25°C
10µs
RDS(ON) limited
10
1
100
10
DC
1 1E-04 0.001 0.01
I =-6.5A, dI/dt=100A/µs 10 100
F 1 VDS (Volts)
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=59°C/W
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Zθ JA Normalized Transient Thermal Resistance
5
VDS (Volts) Figure 8: Capacitance Characteristics
100
ID (Amps)
Ciss
6000
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01 APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT SingleNOTICE. Pulse T 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
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AO4488
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd
L
Vgs Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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