Transcript
AO4494 30V N-Channel MOSFET
General Description
Product Summary
The AO4494 combines advanced trench MOSFET technology with a low resistance package to provide extremely low RDS(ON). This device is for PWM applications.
VDS (V) = 30V ID = 18A
(VGS = 10V)
RDS(ON) < 6.5mΩ RDS(ON) < 9.5mΩ
(VGS = 10V) (VGS = 4.5V)
100% UIS Tested 100% Rg Tested
SOIC-8 Top View D D
D
Bottom View
D D
G
G S
S
S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS
Gate-Source Voltage Continuous Drain Current
TC=25°C
Pulsed Drain Current C Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=70°C
C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Alpha & Omega Semiconductor, Ltd.
±20
V A
14
IDM
130
IAR
32
A
51
mJ
EAR
3.1
PD
Junction and Storage Temperature Range
Units V
18
ID
TC=70°C
Maximum 30
TJ, TSTG
-55 to 150
Symbol t ≤ 10s Steady-State Steady-State
W
2
RθJA RθJL
Typ 28 59 16
°C
Max 40 75 24
Units °C/W °C/W °C/W
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AO4494
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON)
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
30 1 TJ=125°C
5
Gate-Body leakage current
VDS=0V, VGS= ±20V VDS=VGS ID=250µA
1.5
VGS=10V, VDS=5V
130
VGS=10V, ID=18A
±100
nA
2.5
V
5.4
6.5
8.4
10.1 9.5
A
Static Drain-Source On-Resistance VGS=4.5V, ID=16A
7.5
gFS
Forward Transconductance
VDS=5V, ID=18A
70
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs
Gate Source Charge
0.75
1270 VGS=0V, VDS=15V, f=1MHz
VGS=10V, VDS=15V, ID=18A
1590
mΩ mΩ S
1
V
3
A
1900
pF
170
240
310
pF
87
145
200
pF
0.8
1.5
2.3
Ω
24
30
36
nC
12
15
18
nC
4.2
5.2
6.2
nC
4.7
7.8
11
nC
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time IF=18A, dI/dt=500A/µs
22
28
34
Qrr
Body Diode Reverse Recovery Charge IF=18A, dI/dt=500A/µs
19
24
30
Body Diode Reverse Recovery Time
µA
2
RDS(ON)
TJ=125°C
Units V
VDS=30V, VGS=0V
Gate Threshold Voltage On state drain current
Crss
Max
VGS=10V, VDS=15V, RL=0.83Ω, RGEN=3Ω
6.7
ns
3.5
ns
22.5
ns
4
ns ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g. Rev1: Nov. 2010 COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4494
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140
100
10V
5V
120
VDS=5V
6V
4.5V
80
100 60
4V
ID(A)
ID (A)
7V 80 60
40 3.5V
40
125°C
20 20
25°C
VGS=3V 0
0 0
1
2
3
4
0
5
1
3
4
5
6
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E) 12 Normalized On-Resistance
1.8
10 RDS(ON) (mΩ )
2
VGS=4.5V 8 6 VGS=10V
4
1.6
VGS=10V ID=18A
1.4
17 5 VGS=4.5V 2 ID=16A 10
1.2 1 0.8
2 0
5
0
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18 Temperature (Note E)
25
1.0E+02 ID=18A
1.0E+01
20
40
15
IS (A)
RDS(ON) (mΩ )
1.0E+00
125°C
1.0E-01
125°C
1.0E-02
10
25°C
1.0E-03 5
25°C
1.0E-04 1.0E-05
0 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO4494
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2200
10
2000 VDS=15V ID=18A
Ciss
1800 Capacitance (pF)
VGS (Volts)
8
6
4
2
1600 1400 1200 1000 800 600
Coss
400 200
0 0
5
10
15 20 25 Qg (nC) Figure 7: Gate-Charge Characteristics
30
0
90.00
10µs 70.00 60.00
5
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
1000.0
TA=25°C
RDS(ON) limited
80.00 100.0
10µs
TA=100°C TA=150°C
50.00
TA=125°C
ID (Amps)
ID(A), Peak Avalanche Current
Crss
0
10.0
100µs 1ms
1.0
10ms 100ms 10s DC
40.00
TJ(Max)=150°C TA=25°C
0.1
30.00
0.0
20.00 0.000001
0.1
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
1
10
100
VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
1000 TA=25°C
Power (W)
100
10
1 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to-Ambient (Note F)
Alpha & Omega Semiconductor, Ltd.
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AO4494
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=40°C/W
0.1 PD
0.01
Single Pulse Ton
0.001 0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AO4494
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd
L
Vgs Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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