Transcript
AO4566 30V N-Channel MOSFET
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 4.5V VGS • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
Application
VDS
30V 12A
ID (at VGS=10V) RDS(ON) (at VGS=10V)
< 11mΩ
RDS(ON) (at VGS=4.5V)
< 17mΩ
100% UIS Tested 100% Rg Tested
• DC/DC Converters in Computing, Servers, and POL • Isolated DC/DC Converters in Telecom and Industrial SOIC-8 Top View D D
D
Bottom View
D D
G
G S
S
S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain CurrentG
VGS TA=25°C
Units V
±20
V
12
ID
TA=70°C
Maximum 30
9.4
A
Pulsed Drain Current C
IDM
48
Avalanche Current C
IAS
15
A
Avalanche energy L=0.1mH C
EAS
11
mJ
VDS Spike
VSPIKE
36
V
Power Dissipation B
100ns TA=25°C
PD
TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 0: Aug 2012
2.5
TJ, TSTG
Symbol t ≤ 10s Steady-State Steady-State
W
1.6
RθJA RθJL
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-55 to 150
Typ 42 70 20
°C
Max 50 85 30
Units °C/W °C/W °C/W
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AO4566
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS，ID=250µA
RDS(ON)
Static Drain-Source On-Resistance
VGS=10V, ID=12A TJ=125°C VGS=4.5V, ID=10A gFS
Forward Transconductance
VDS=5V, ID=12A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
Qg(4.5V) Total Gate Charge Qgs
Gate Source Charge
Qgd tD(on)
VGS=10V, VDS=15V, ID=12A
±100
nA
2.3
V
9
11
12.5
15
13.5
17
mΩ
1
V
3.5
A
45
VGS=0V, VDS=15V, f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
1.8
0.72
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
µA
5 1.3
1
Units V
1 TJ=55°C
VGS(th)
Max
30
VDS=30V, VGS=0V
IGSS
Coss
Typ
mΩ
S
542
pF
233
pF
31
pF
2
3
Ω
9
12.2
nC
4.3
5.8
nC
2.2
nC
Gate Drain Charge
1.7
nC
Turn-On DelayTime
4
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
3.5
ns
18
ns
tf
Turn-Off Fall Time
3
ns
trr
Body Diode Reverse Recovery Time
Qrr
IF=12A, dI/dt=500A/µs
9.7
Body Diode Reverse Recovery Charge IF=12A, dI/dt=500A/µs
11.5
ns nC
VGS=10V, VDS=15V, RL=1.25Ω, RGEN=3Ω
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: Aug 2012
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AO4566
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 50
50
10V
4.5V
VDS=5V 4V
6V
40
40
30
30 ID(A)
ID (A)
3.5V
125°C
20
20
10
10
25°C
VGS=3.0V 0
0 0
1
2
3
4
0
5
18
2
3
4
5
Normalized On-Resistance
1.6
16
VGS=4.5V
14 RDS(ON) (mΩ Ω)
1
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
12 10 8
VGS=10V
6
VGS=10V ID=12A
1.4
17 5 2 10 VGS=4.5V
1.2
1
ID=10A
0.8
4 0
3
0
6
9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
25
1.0E+01 ID=12A 1.0E+00
20
40 125°C
1.0E-01
15
IS (A)
RDS(ON) (mΩ Ω)
125°C
1.0E-02
10 1.0E-03 25°C
5
25°C
1.0E-04 1.0E-05
0 2
6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: Aug 2012
4
10
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO4566
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
800 VDS=15V ID=12A
8
Ciss
Capacitance (pF)
VGS (Volts)
600 6
4
400 Coss 200
2
0
Crss
0 0
2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics
10
0
IDM limited
5
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
10µs
ID (Amps)
100µs 1ms
1.0
RDS(ON) @10V limited
10ms
0.1
Power (W)
10.0 100
10
10s DC
TJ(Max)=150°C TA=25°C
1
0.0
1E-05 0.01
0.1
1 VDS (Volts)
10
0.001
0.1
10
1000
100 Pulse Width (s)
* VGS > minimum VGS at which RDS(ON) is specified
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
RθJA=85°C/W
0.1 PD 0.01
Single Pulse Ton
T
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: Aug 2012
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AO4566
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf t o ff
D iode R ecovery T est C ircuit & W aveform s Q rr = -
V ds +
Idt
DUT V gs
V ds -
Isd V gs
Ig
Rev 0: Aug 2012
L
Isd
+ VD C
-
IF
t rr
dI/dt I RM
V dd
V dd V ds
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