Transcript
AO4606 30V Complementary MOSFET
General Description
Product Summary
The AO4606 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, and for a host of other applications.
N-Channel VDS= 30V
P-Channel -30V
ID= 6A (VGS=10V)
-6.5A (VGS=-10V)
RDS(ON)
RDS(ON)
< 30mΩ (VGS=10V)
< 28mΩ (VGS=-10V)
< 42mΩ (VGS=4.5V)
< 44mΩ (VGS=-4.5V)
100% UIS Tested 100% Rg Tested
100% UIS Tested 100% Rg Tested
SOIC-8 D2 Top View
D1
Bottom View Top View S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G2
G1 S2
n-channel
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel VDS Drain-Source Voltage 30 Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current
ID
TA=70°C
S1
p-channel
Max p-channel -30
Units V
±20
±20
V
6
-6.5 A
5
-5.3
IDM
30
-30
Avalanche Current C
IAS, IAR
10
23
A
Avalanche energy L=0.1mH C TA=25°C
EAS, EAR
5
26
mJ
Pulsed Drain Current
Power Dissipation B
C
PD
TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 10: April 2012
Steady-State Steady-State
2 1.3
TJ, TSTG
Symbol t ≤ 10s
2 1.3
RθJA RθJL
www.aosmd.com
-55 to 150
Typ 48 74 32
W °C
Max 62.5 90 40
Units °C/W °C/W °C/W
Page 1 of 9
AO4606
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
VGS=10V, ID=6A TJ=125°C VGS=4.5V, ID=5A
±100
nA
1.8
2.4
V
25
30
40
48
33.5
42
mΩ
1
V
2.5
A
A
gFS
Forward Transconductance
VDS=5V, ID=6A
15
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
IGSS
Coss
Units
1 TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
VGS(th)
RDS(ON)
Typ
mΩ
S
200
255
310
pF
VGS=0V, VDS=15V, f=1MHz
30
45
60
pF
20
35
50
pF
VGS=0V, VDS=0V, f=1MHz
1.6
3.25
4.9
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
4
5.2
6
nC
Qg(4.5V) Total Gate Charge
2
2.55
3
nC
VGS=10V, VDS=15V, ID=6A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time IF=6A, dI/dt=100A/µs
8.5
12
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
2.2
3
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω
0.85
nC
1.3
nC
4.5
ns
2.5
ns
14.5
ns
3.5
ns ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 10: April 2012
www.aosmd.com
Page 2 of 9
AO4606
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
30 10V
VDS=5V
25
4.5V
7V
12
20 9 ID(A)
ID (A)
4V 15 3.5V
6
10
125°C 3
VGS=3V
5
0
0 0
1
2
3
4
1
5
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
1.5
2
2.5
3
3.5
4
VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance
45 40 VGS=4.5V RDS(ON) (mΩ Ω)
25°C
35 30 25
VGS=4.5V ID=6A
1.8 1.6 1.4 1.2
VGS=10V ID=8A
1
17 5 2 10
VGS=10V 20
0.8 0
3
6
9 12 15 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
100
25
50
75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02 ID=6A 1.0E+01
40
1.0E+00
60
IS (A)
RDS(ON) (mΩ Ω)
80
125°C
125°C
1.0E-01 1.0E-02
25°C
25°C
1.0E-03
40
1.0E-04 20
1.0E-05 0
4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 10: April 2012
2
www.aosmd.com
0.0
0.2
0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 9
AO4606
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
500 VDS=15V ID=6A 400 Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
300
200 Coss
2
100
0
0
Crss 0
2
4 Qg (nC) Figure 7: Gate-Charge Characteristics
0
6
100.0
5
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
1000 TA=25°C
10µs RDS(ON) limited
100
100µs
1.0
1ms 10ms TJ(Max)=150°C TA=25°C
0.1
Power (W)
ID (Amps)
10.0
10
10s
DC
1
0.0 0.01
0.1
1 VDS (Volts)
10
100
0.00001
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.001
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
RθJA=90°C/W
0.1
PD
0.01
Ton
T
0.001 0.00001
Rev 10: April 2012
0.0001
0.001
0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
www.aosmd.com
100
1000
Page 4 of 9
AO4606
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 10: April 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 5 of 9
AO4606
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V VDS=-30V, VGS=0V
-30
IDSS
Zero Gate Voltage Drain Current
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
ID(ON)
On state drain current
VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-6.5A
RDS(ON)
-1.3
Forward Transconductance Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
±100
nA
-1.85
-2.4
V
22
28
32
40
34
44
A mΩ mΩ
18 -0.8
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
V
-30
VGS=-4.5V, ID=-5A VDS=-5V, ID=-6.5A IS=-1A,VGS=0V
gFS
Units
-5
TJ=125°C
VSD
Max
-1
TJ=55°C
Static Drain-Source On-Resistance
Coss
Typ
VGS=0V, VDS=-15V, f=1MHz
S -1
V
-2.5
A
760
pF
140
pF
95
pF
3.2
5
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
13.6
16
nC
Qg(4.5V) Total Gate Charge
6.7
8
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=-15V, ID=-6.5A
1.5
2.5
nC
3.2
nC
8
ns
VGS=10V, VDS=-15V, RL=2.3Ω, RGEN=3Ω
6
ns
17
ns
5
ns
IF=-6.5A, dI/dt=100A/µs
15
Body Diode Reverse Recovery Charge IF=-6.5A, dI/dt=100A/µs
9.7
ns nC
Body Diode Reverse Recovery Time
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 10: April 2012
www.aosmd.com
Page 6 of 9
AO4606
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40
40 -10V
VDS=-5V
-4.5V
-5V
30
30
-ID(A)
-ID (A)
-4V 20
20 125°C
-3.5V 10
10
25°C
VGS=-3V 0
0 0
1
2
3
4
0
5
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
2
3
4
5
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
45
1.8 Normalized On-Resistance
VGS=-4.5V
40 35 RDS(ON) (mΩ Ω)
1
30 25 20 VGS=-10V 15 10
VGS=-10V ID=-6.5A
1.6 1.4
17 5 2 VGS=-4.5V 10 ID=-5A
1.2 1 0.8
0
5
10 15 20 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
90
25
50
75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02 ID=-6.5A 1.0E+01
40
1.0E+00 125°C -IS (A)
RDS(ON) (mΩ Ω)
70
125°C
50
30
1.0E-01 25°C 1.0E-02 1.0E-03
25°C
1.0E-04 10
1.0E-05 2
6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 10: April 2012
4
www.aosmd.com
0.0
0.2
0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 9
AO4606
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
1200 VDS=-15V ID=-6.5A
1000 Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss 800 600 400 Coss
2
200
0
0 0
3
6 9 12 Qg (nC) Figure 7: Gate-Charge Characteristics
Crss 0
15
5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
10µs RDS(ON) limited
100µs 1ms
1.0
10ms 0.1
DC
TJ(Max)=150°C TA=25°C
100
Power (W)
-ID (Amps)
10.0
10
10s
0.0
1 0.01
0.1
1 -VDS (Volts)
10
100
0.00001
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.001
0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1 PD
0.01
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 10: April 2012
www.aosmd.com
Page 8 of 9
AO4606
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev 10: April 2012
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
www.aosmd.com
Page 9 of 9
