Transcript
AO4630 30V Complementary MOSFET
General Description
Product Summary
AO4630 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This complementary N and P channel MOSFET configuration is ideal for low Input Voltage inverter applications.
N-Channel VDS= 30V
P-Channel -30V
ID= 7A (VGS=10V)
-5A (VGS=-10V)
RDS(ON)
RDS(ON)
< 23mΩ (VGS=10V)
< 48mΩ (VGS=-10V)
< 28mΩ (VGS=4.5V)
< 57mΩ (VGS=-4.5V)
< 36mΩ (VGS=2.5V)
< 78mΩ (VGS=-2.5V)
100% UIS Tested 100% Rg Tested
100% UIS Tested 100% Rg Tested
SOIC-8 Top View
D1
D2
Bottom View Top View S1 G1 S2 G2
1 2 3 4
D1 D1 D2 D2
8 7 6 5
G1
G2 S1
N-channel
Pin1
S2
P-channel
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO4630
SO-8
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Max N-channel Parameter Drain-Source Voltage VDS 30 Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current
ID
TA=70°C C
Avalanche Current C Avalanche energy
L=0.1mH
VDS Spike
10µs TA=25°C
Power Dissipation B
C
Junction and Storage Temperature Range
Rev.1.0: Nov 2015
Units V
±12
±12
V
7
-5 -4
30
-25
IAS
14
18
A
EAS
10
16
mJ
VSPIKE
36
-36
V
2
Steady-State Steady-State
W
1.3
TJ, TSTG
Symbol t ≤ 10s
A
5.6
IDM
PD
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Max P-channel -30
RθJA RθJL
-55 to 150
Typ 48 74 32
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°C
Max 62.5 90 40
Units °C/W °C/W °C/W
Page 1 of 9
AO4630
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V
TJ=55°C
±100
nA
1.05
1.45
V
17.8
23
28
40
VGS=4.5V, ID=6A
19
28
mΩ
VGS=2.5V, ID=5A
24
36
mΩ
1
V
2.5
A
0.65 TJ=125°C
gFS
Forward Transconductance
VDS=5V, ID=7A
35
Diode Forward Voltage
IS=1A, VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VSD
Coss
Units
1
VGS=10V, ID=7A Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
mΩ
S
670
pF
75
pF
45
pF
3
4.5
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
13
20
nC
Qg(4.5V)
Total Gate Charge
6
12
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
f=1MHz
VGS=10V, VDS=15V, ID=7A
1.5
nC
1.8
nC
3
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time IF=7A, di/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=7A, di/dt=500A/µs
7.5
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=2.2Ω, RGEN=3Ω
nC
1.3
2.5
ns
25
ns
4
ns
6.5
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: Nov 2015
www.aosmd.com
Page 2 of 9
AO4630
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40
15 10V
VDS=5V
3V
32
12
4.5V 2.5V
9 ID (A)
ID (A)
24
16
6 VGS=2V
8
125°C 25°C
3
0
0 0
1
2
3
4
0
5
1
1.5
2
2.5
3
VGS (Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Figure 1: On-Region Characteristics (Note E) 30
1.8
26
VGS=2.5V
22
VGS=4.5V
Normalized On-Resistance
RDS(ON) (mΩ Ω)
0.5
18 VGS=10V 14
1.6
VGS=4.5V ID=6A
1.4
VGS=10V ID=7A
1.2 VGS=2.5V ID=5A
1
0.8
10 0
4
8
12
16
0
20
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50
1.0E+01 ID=7A 1.0E+00 125°C
1.0E-01 34
125°C
IS (A)
RDS(ON) (mΩ Ω)
42
1.0E-02
26
25°C 1.0E-03 25°C
18
1.0E-04
10
1.0E-05 0
2
4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.1.0: Nov 2015
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0.0
0.2
0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
1.0
Page 3 of 9
AO4630
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
1000 VDS=15V ID=7A
8
800 Capacitance (pF)
VGS (Volts)
Ciss 6
4
600
400
2
Crss
200
0
Coss
0 0
3
6
9
12
15
0
5
Qg (nC) Figure 7: Gate-Charge Characteristics
15
20
25
30
VDS (Volts) Figure 8: Capacitance Characteristics
100.0
1000 TJ(Max)=150°C TA=25°C
100µs 1.0
1ms 10ms
Power (W)
10µs
RDS(ON) limited
10.0 ID (Amps)
10
10
DC
0.1
TJ(Max)=150°C TA=25°C
0.0 0.01
100
10s
0.1
1 10 VDS (Volts) VGS> or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
1 1E-05
100
0.001
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1 PDM
0.01
Single Pulse Ton T
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: Nov 2015
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Page 4 of 9
AO4630
Figure A: Charge Gate Charge Circuit & Waveforms Gate Test Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf toff
Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped TestCircuit Circuit&&Waveforms Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev.1.0: Nov 2015
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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Page 5 of 9
AO4630
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30
Zero Gate Voltage Drain Current
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
VDS=VGS, ID=-250µA
TJ=55°C
±100
nA
-0.9
-1.3
V
40
48
48
60
VGS=-4.5V, ID=-3.5A
45
57
mΩ
VGS=-2.5V, ID=-2.5A
60
78
mΩ
-0.5 TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-5A
18
Diode Forward Voltage
IS=-1A, VGS=0V
-0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
-5
VSD
Coss
Units
-1
VGS=-10V, ID=-5A Static Drain-Source On-Resistance
Max
V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
mΩ
S -1
V
-2.5
A
700
pF
80
pF
60
pF
8
12
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
14
25
nC
Qg(4.5V)
Total Gate Charge
7
15
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time IF=-5A, di/dt=500A/µs
Qrr
Body Diode Reverse Recovery Charge IF=-5A, di/dt=500A/µs
40
Body Diode Reverse Recovery Time
f=1MHz
VGS=-10V, VDS=-15V, ID=-5A
VGS=-10V, VDS=-15V, RL=3Ω, RGEN=3Ω
4
nC
1.5
nC
2.5
nC
6.5
ns
3.5
ns
41
ns
9
ns
15
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: Nov 2015
www.aosmd.com
Page 6 of 9
AO4630
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20
20 -10V
VDS=-5V
-4.5V -3V
15
15
-ID (A)
-ID (A)
-2.5V 10
5
10
125°C
5
VGS=-2V
25°C
0
0 0
1
2
3
4
0
5
1
1.5
2
2.5
3
-VGS (Volts) Figure 2: Transfer Characteristics (Note E)
-VDS (Volts) Figure 1: On-Region Characteristics (Note E) 80 Normalized On-Resistance
1.8
70 RDS(ON) (mΩ Ω)
0.5
VGS=-2.5V 60 VGS=-4.5V
50
40
VGS=-10V ID=-5A
1.6
1.4 VGS=-2.5V ID=-2.5A 1.2
VGS=-4.5V ID=-3.5A
1
VGS=-10V 0.8
30 0
2
4
6
8
0
10
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 120
1.0E+02 ID=-5A 1.0E+01
100
80
-IS (A)
RDS(ON) (mΩ Ω)
1.0E+00 125°C
125°C
1.0E-01 25°C
1.0E-02
60
1.0E-03 40 1.0E-04
25°C 20
1.0E-05 0
2
4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.1.0: Nov 2015
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0.0
0.2
0.4
0.6 0.8 1.0 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
1.2
Page 7 of 9
AO4630
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
1000 VDS=-15V ID=-5A 800 Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss
600
400
2
200
0
Coss Crss
0 0
3
6
9
12
15
0
6
Qg (nC) Figure 7: Gate-Charge Characteristics
12
18
1000 TJ(Max)=150°C TA=25°C
10µs RDS(ON) limited
100µs
1.0
DC 0.1
10 10s
TJ(Max)=150°C TA=25°C
0.0 0.01
1ms 10ms
100 Power (W)
-ID (Amps)
30
-VDS (Volts) Figure 8: Capacitance Characteristics
100.0
10.0
24
0.1
1 10 -VDS (Volts) VGS
