Transcript
AO4720 30V N-Channel MOSFET
SRFET General Description
Product Summary
SRFET TM The AO4720 uses advanced trench technology with a monolithically integrated Schottky diode to provide excellent RDS(ON),and low gate charge. This device is suitable for use as a low side FET in SMPS, load switching and general purpose applications.
VDS (V) = 30V ID =13A (VGS = 10V) RDS(ON) < 11mΩ (VGS = 10V) RDS(ON) < 17.5mΩ (VGS = 4.5V)
TM
100% UIS Tested 100% Rg Tested
SOIC-8 Top View D D
D
Bottom View
D
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
D
G
G S
S
S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage
Symbol VDS
Max 30
Units V
Gate-Source Voltage
VGS
±20
V
TA=25°C
Continuous Drain Current AF
13
TA=70°C
Pulsed Drain Current B
IDSM
11
A A
IDM
120
C
IAR
21
A
Repetitive avalanche energy L=0.3mH C TA=25°C
EAR
66
mJ
Avalanche Current
Power Dissipation
TA=70°C
Junction and Storage Temperature Range
TJ, TSTG
Thermal Characteristics Parameter
Symbol
Maximum Junction-to-Ambient A
t ≤ 10s
Maximum Junction-to-Ambient A
Steady-State
Maximum Junction-to-Lead C
Steady-State
Alpha & Omega Semiconductor, Ltd.
3.1
PDSM
RθJA RθJL
W
2 -55 to 150
Typ 32 60 17
Max 40 75 24
°C
Units °C/W °C/W °C/W
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AO4720
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250uA, VGS=0V
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage On state drain current
VDS=VGS ID=250µA
1.3
VGS=10V, VDS=5V
120
TJ=125°C
VGS=10V, ID=13A Static Drain-Source On-Resistance
TJ=125°C VGS=4.5V, ID=11A
gFS
Forward Transconductance
VDS=5V, ID=13A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode + Schottky Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Units V
0.1
Zero Gate Voltage Drain Current
RDS(ON)
Max
30
VDS=30V, VGS=0V
IDSS
ID(ON)
Typ
20 0.1
µA
1.62
2
V
9.3
11.0
13.8
17.3
14
17.5
mΩ
0.5
V
5
A
A mΩ
37 0.40
1267 VGS=0V, VDS=15V, f=1MHz
mA
S
1600
pF
308
pF
118
pF
1.3
2.0
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
21
30
nC
Qg(4.5V) Total Gate Charge
10.4
14
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time Body Diode Reverse Recovery Time
Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=13A
3.0
nC
3.6
nC
5.2
ns
VGS=10V, VDS=15V, RL=1.2Ω, RGEN=3Ω
3.8
ns
21.2
ns
4.4
ns
IF=13A, dI/dt=300A/µs
11.2
Body Diode Reverse Recovery Charge IF=13A, dI/dt=300A/µs
10.5
17
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The value in any given application depends on the user's specific board design. B: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F. The power dissipation and current rating is based on the t≤ 10s junction to ambient thermal resistance rating. Rev4: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO4720
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120
30 10V
6V
80
5V
60
4.5V
40
VDS=5V
25
7V
20 ID(A)
ID (A)
100
15 125°
10
4V
25°C 20
5 VGS=3.5V
0
0 0
1
2
3
4
5
1
2
VDS (Volts)
4
5
VGS(Volts) Figure 2: Transfer Characteristics
DYNAMIC PARAMETERS Figure 1: On-Region Characteristics 18 Normalized On-Resistance
1.8
16 VGS=4.5V RDS(ON) (mΩ )
3
14 12 VGS=10V
10 8 6
VGS=10V 1.6
ID=13A
1.4 VGS=4.5V 1.2
ID=11A
1 0.8
0
5
10
15
20
25
30
0
30
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
60
90
120
150
180
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
30
1.0E+02 ID=13A
1.0E+01
125°C
25
20
125°C
IS (A)
RDS(ON) (mΩ )
1.0E+00
15
25°C
1.0E-01 1.0E-02 1.0E-03
10
1.0E-04
25°C
1.0E-05
5 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics
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AO4720
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2000
10
1600 VDS=15V ID=13A
6
Capacitance (pF)
VGS (Volts)
8
4
Ciss
1200
800
2
Coss
400 Crss
0
0 0
5
10
15
20
25
0
Qg (nC) Figure 7: Gate-Charge Characteristics
DYNAMIC PARAMETERS
1000.0
RDS(ON) limited
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
1ms 1.0
100µ 10ms 1s
TJ(Max)=150°C TA=25°C
TJ(Max)=150°C TA=25°C
80
10µs
10.0
0.1
10
100
Power (W)
ID (Amps)
100.0
5
60 40
10s
DC
20 0.0 0.1
1
10
100
VDS (Volts)
0 0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Zθ JA Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1
0.01 Single Pulse 0.001 0.00001
0.0001
0.001
PD
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=75°C/W 0.01
0.1
Ton
1
T
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Alpha & Omega Semiconductor, Ltd.
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AO4720
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd
L
Vgs Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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AO4720
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1.0E-01
1.2 1 VDS=24V
20A
VSD(V)
IR (A)
0.8 VDS=12V
0.6
10A
5A
0.4 0.2 1.0E-02
0 50
100 150 200 Temperature (°C) Figure 12: Diode Reverse Leakage Current vs. PARAMETERS Junction Temperature
25
8 di/dt=800A/us
2.5
Irm
trr (ns)
4
Irm (A)
125ºC
di/dt=800A/us
12
25ºC
Qrr
10
2 3 4 5 6 Temperature (°C) Figure 13: Diode Forward voltage vs. Junction Temperature
15
6
15
1
125ºC
20
Qrr (nC)
0
2
125ºC
9
1.5 trr
S
0
DYNAMIC
IS=1A
25ºC
6
1 25ºC
25ºC
2
5
S
3
0.5 125ºC
0
0 0
5
10
15
20
25
10 125ºC
7 6 5
125º
10
25ºC
5
Qrr
4 3
0 0
200
400
600
800
0 1000
di/dt (A) Figure 16: Diode Reverse Recovery Charge and Peak Current vs. di/dt
Alpha & Omega Semiconductor, Ltd.
25
30
2.5
25ºC
2
9
trr 25ºC
6
1.5 1
2 1
Irm
20
Is=20A
125ºC
12 trr (ns)
Qrr (nC)
25ºC 15
15
3
15
8
Is=20A
10
18
9
Irm (A)
20
5
Is (A) Figure 15: Diode Reverse Recovery Time and Soft Coefficient vs. Conduction Current
Is (A) Figure 14: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 25
0 0
30
S
0
3
S
125ºC
0 0
200
400
600
800
0.5 0 1000
di/dt (A) Figure 17: Diode Reverse Recovery Time and Soft Coefficient vs. di/dt
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