Transcript
AO4812 30V Dual N-Channel MOSFET
General Description
Product Summary
The AO4812 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in buck converters.
ID (at VGS=10V)
VDS
30V 6A
RDS(ON) (at VGS=10V)
< 30mΩ
RDS(ON) (at VGS =4.5V)
< 42mΩ
100% UIS Tested 100% Rg Tested
SOIC-8 Top View
D1
Bottom View
D2
Top View S2 G2 S1 G1
D2 D2 D1 D1
G1
G2 S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current
C
Units V
±20
V
6
ID
TA=70°C
Maximum 30
5
A
IDM
30
Avalanche Current C
IAS, IAR
10
A
Avalanche energy L=0.1mH C TA=25°C
EAS, EAR
5
mJ
Power Dissipation B
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 9: February 2011
2
PD
TA=70°C
TJ, TSTG
Symbol t ≤ 10s Steady-State Steady-State
W
1.3
RθJA RθJL
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-55 to 150
Typ 48 74 32
°C
Max 62.5 90 40
Units °C/W °C/W °C/W
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AO4812
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter
Symbol
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±20V VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
30
±100
nA
1.8
2.4
V
25
30
40
48
VGS=4.5V, ID=5A
33
42
mΩ
1
V
2.5
A
310
pF
VGS=10V, ID=6A Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=6A
15
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.76
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate Threshold Voltage
Units V
1
VGS(th)
Coss
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
255 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
S
45 1.6
mΩ
pF
35
50
pF
3.25
4.9
Ω
SWITCHING PARAMETERS Total Gate Charge Qg(10V)
5.2
6.3
nC
Qg(4.5V)
2.55
3.2
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=6A
VGS=10V, VDS=15V, RL=2.5Ω, RGEN=3Ω
0.85
nC
1.3
nC
4.5
ns
2.5
ns
14.5
ns
tf
Turn-Off Fall Time
3.5
ns
trr
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/µs
8.5
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
2.2
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 9: February 2011
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AO4812
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
30 10V
VDS=5V
7V
25
4.5V 10
20 ID(A)
ID (A)
4V 15 3.5V 5
10 5
VGS=3V 0
0 0
1
2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E)
1
5
1.5
2
2.5
3
3.5
4
4.5
VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance
40
35 RDS(ON) (mΩ )
25°C
125°C
VGS=4.5V 30
25 VGS=10V
1.6
VGS=10V ID=6A
1.4
17 5 2 VGS=4.5V 10 I =5A
1.2
D
1 0.8
20 0
3
6
9
12
0
15
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
100
1.0E+02 ID=6A 1.0E+01
40
1.0E+00
60
IS (A)
RDS(ON) (mΩ )
80
125°C
1.0E-01 1.0E-02
125°C 25°C
1.0E-03
40
1.0E-04
25°C
1.0E-05
20 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 9: February 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO4812
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400
10 VDS=15V ID=6A
350 300 Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
250 200 150 Coss
100 2 50 0
Crss
0 0
1
2
3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics
6
0
100.0
5
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
10000 TA=25°C 10µs RDS(ON) limited
1000
100µs
1.0
Power (W)
ID (Amps)
10.0
1ms 10ms TJ(Max)=150°C TA=25°C
0.1
100
10
10s DC
0.0 0.01
0.1
1 VDS (Volts)
10
1
100
0.00001
0.1 10 1000 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 10: Maximum Forward Biased Safe Operating Area (Note F)
0.001
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01 Single Pulse
Ton
0.001 0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 9: February 2011
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AO4812
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 9: February 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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