Transcript
AO4822 30V Dual N-channel MOSFET
General Description
Product Summary
The AO4822 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
ID (at VGS=10V)
VDS
30V 8A
RDS(ON) (at VGS=10V)
<19mΩ
RDS(ON) (at VGS = 4.5V)
< 26mΩ
ESD Protected 100% UIS Tested 100% Rg Tested
D
SOIC-8 Top View
Bottom View
D
Top View S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G
G
S
S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current
VGS TA=25°C
Units V
±20
V
8
ID
TA=70°C
Maximum 30
6.5
A
Pulsed Drain Current C
IDM
48
Avalanche Current C
IAS, IAR
19
A
Avalanche energy L=0.1mH C TA=25°C
EAS, EAR
18
mJ
Power Dissipation B
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 5 : Mar 2011
2
PD
TA=70°C
TJ, TSTG
Symbol t ≤ 10s Steady-State Steady-State
W
1.3
RθJA RθJL
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-55 to 150
Typ 48 74 32
°C
Max 62.5 90 40
Units °C/W °C/W °C/W
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AO4822
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=10V, VDS=5V
48
VGS=10V, ID=8A TJ=125°C VGS=4.5V, ID=6A
10
µA
1.8
2.4
V
15.5
19
21
25
18.5
26
mΩ
1
V
2.5
A
A
gFS
Forward Transconductance
VDS=5V, ID=8A
30
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
VGS(th)
Units V
1 TJ=55°C
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
mΩ
S
600
740
888
pF
VGS=0V, VDS=15V, f=1MHz
77
110
145
pF
50
82
115
pF
VGS=0V, VDS=0V, f=1MHz
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
12
15
18
nC
Qg(4.5V) Total Gate Charge
6
7.5
9
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=15V, ID=8A
VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω
2.5
nC
3
nC
5
ns
3.5
ns
19
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=500A/µs
6
3.5 8
10
ns
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14
18
22
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: Mar 2011
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AO4822
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30
30
10V
4V
VDS=5V 25
25 3.5V
20 ID(A)
ID (A)
20 15 3V
10
15 10
125°C
5
5
25°C
VGS=2.5V 0
0 0
1
2
3
4
1
5
30
2
2.5
3
3.5
4
Normalized On-Resistance
1.6
25 RDS(ON) (mΩ Ω)
1.5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
20
15 VGS=10V 10
VGS=10V ID=8A
1.4
17 5 2 10
1.2
VGS=4.5V ID=6A
1
0.8 0
5
10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
40
1.0E+02 ID=8A
35
1.0E+01
30
1.0E+00 125°C
25
IS (A)
RDS(ON) (mΩ Ω)
40
1.0E-01
125°C
1.0E-02
20
1.0E-03
15
25°C
25°C 1.0E-04
10 2
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 5: Mar 2011
4
1.0E-05
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0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO4822
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
1200 VDS=15V ID=8A
1000 Ciss Capacitance (pF)
VGS (Volts)
8
6
4
2
800 600 400
Coss
200 Crss
0
0 0
5 10 Qg (nC) Figure 7: Gate-Charge Characteristics
15
0
30
1000.0
100 IAR (A) Peak Avalanche Current
5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
TA=25°C
100.0 TA=100°C
10
TA=125°C
ID (Amps)
10µs
TA=150°C
RDS(ON) limited
10.0
100µs
1.0
1ms 10ms
TJ(Max)=150°C TA=25°C
0.1
10s
DC
0.0 1
0.01
0.000001
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 9: Single Pulse Avalanche capability (Note C)
0.1
1
10
100
VDS (Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F)
10000 TA=25°C
Power (W)
1000
100
10
1 0.00001
Rev 5: Mar 2011
0.001
0.1 10 Pulse Width (s) Figure 11: Single Pulse Power Rating Junction-to-Ambient (Note F)
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1000
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AO4822
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1 PD 0.01
Single Pulse
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 12: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 5: Mar 2011
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AO4822
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 5: Mar 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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