Transcript
AO4862E 30V Dual N-Channel AlphaMOS
General Description
Product Summary VDS
• Trench Power AlphaMOS (αMOS LV) technology • Low RDS(ON) • Low Gate Charge • High Current Capability • RoHS and Halogen-Free Compliant
ID (at VGS=10V)
30V 4.5A
RDS(ON) (at VGS=10V)
< 46mΩ
RDS(ON) (at VGS=4.5V)
< 65mΩ
Applications
Typical ESD protection
HBM Class 2
• System switch • Inverter • Motor drive • PPC • MFP
100% UIS Tested 100% Rg Tested
SOIC-8 Top View
Bottom View
D1
Top View S2 G2 S1 G1
1 2 3 4
8 7 6 5
D2 D2 D1 D1
G1
D2
G2 S1
S2
Pin1
Orderable Part Number
Package Type
Form
Minimum Order Quantity
AO4862E
SO-8
Tape & Reel
3000
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage
Symbol VDS
Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current C Avalanche Current C Avalanche energy
L=0.1mH
VDS Spike
10µs TA=25°C
Power Dissipation B
C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev.1.0: July 2015
Steady-State Steady-State
V A
3.5 18
IAS
8
A
EAS
3
mJ
VSPIKE
36
V
1.7
W
1.1
TJ, TSTG
Symbol t ≤ 10s
±20
IDM
PD
TA=70°C
Units V
4.5
ID
TA=70°C
Maximum 30
RθJA RθJL
-55 to 150
Typ 52 80 35
www.aosmd.com
°C
Max 70 100 45
Units °C/W °C/W °C/W
Page 1 of 5
AO4862E
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
Typ
Zero Gate Voltage Drain Current
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
V 1
TJ=55°C 1.5
±10
µA
1.9
2.5
V
38
46
60
72 65
RDS(ON)
Static Drain-Source On-Resistance VGS=4.5V, ID=3.5A
50
gFS
Forward Transconductance
VDS=5V, ID=4.5A
11
VSD
Diode Forward Voltage
IS=1A, VGS=0V
0.8
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz f=1MHz
µA
5
VGS=10V, ID=4.5A
Coss
Units
30
VDS=30V, VGS=0V
IDSS
Max
mΩ S
1
V
2
A
215
pF
35
pF
20
pF Ω
2
3
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
4.2
10
nC
Qg(4.5V) Total Gate Charge
2
6
nC
VGS=10V, VDS=15V, ID=4.5A
1
mΩ
Qgs
Gate Source Charge
0.55
nC
Qgd
Gate Drain Charge
1
nC
tD(on)
Turn-On DelayTime
3
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time
Qrr
Body Diode Reverse Recovery Charge IF=4.5A, di/dt=500A/µs
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=3.33Ω, RGEN=3Ω IF=4.5A, di/dt=500A/µs
3
ns
16
ns
2.5
ns
5.5
ns nC
7
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: July 2015
www.aosmd.com
Page 2 of 5
AO4862E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
15
10V
4V
12
VDS=5V
4.5V
12
9
3.5V
ID (A)
ID (A)
9
6
6 VGS=3V
3
3 125°C 25°C 0
0 0
1
2
3
4
0
5
2
75
1.8
Normalized On-Resistance
RDS(ON) (mΩ Ω)
90
VGS=4.5V
45 VGS=10V
30
2
3
4
5
VGS (Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Figure 1: On-Region Characteristics (Note E)
60
1
15
VGS=10V ID=4.5A
1.6 1.4 VGS=4.5V ID=3.5A
1.2 1 0.8
0 0
2
4
6
8
0
10
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 140
1.0E+01
120
1.0E+00
100
1.0E-01
80
IS (A)
RDS(ON) (mΩ Ω)
ID=4.5A
125°C
125°C
1.0E-02 25°C
60
1.0E-03
40
1.0E-04 25°C
20
1.0E-05 2
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.1.0: July 2015
4
www.aosmd.com
0.0
0.2
0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
1.0
Page 3 of 5
AO4862E
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
300 VDS=15V ID=4.5A
250 Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss
200 150 100 Coss
50
0
Crss
0 0
1
2
3
4
5
0
Qg (nC) Figure 7: Gate-Charge Characteristics
15
20
25
30
1000
1.0
DC
TJ(Max)=150°C TA=25°C
0.0 0.01
1ms 10ms
0.1
1 10 VDS (Volts) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
100
100 Power (W)
RDS(ON) limited
0.1
TJ(Max)=150°C TA=25°C
10µs 100µs
ID (Amps)
10
VDS (Volts) Figure 8: Capacitance Characteristics
100.0
10.0
5
10
1 1E-05 0.0001 0.001 0.01
0.1
1
10
100
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=100°C/W
0.1 PDM
0.01
0.001 1E-05
Single Pulse Ton T
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: July 2015
www.aosmd.com
Page 4 of 5
AO4862E
Figure A: Charge Gate Charge Test Circuit & Waveforms Gate Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Figure B:Resistive ResistiveSwitching Switching Test Test Circuit Circuit&&Waveforms Waveforms RL Vds Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf toff
Figure C: UnclampedInductive InductiveSwitching Switching (UIS) Test Unclamped Test Circuit Circuit&&Waveforms Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Figure D: Recovery Diode Recovery Test Circuit & Waveforms Diode Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev.1.0: July 2015
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
www.aosmd.com
Page 5 of 5
