Transcript
AO4948 30V Dual N-Channel MOSFET
SRFET General Description
Product Summary
The AO4948 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The two MOSFETs make a compact and efficient switch and synchronous rectifier combination for use in DC-DC converters. A monolithically integrated Schottky diode in parallel with the synchronous MOSFET to boost efficiency further.
FET1(N-Channel) VDS= 30V
FET2(N-Channel) 30V
ID= 8.8A (VGS=10V)
8A (VGS=10V)
• RoHS and Halogen-Free Compliant
RDS(ON)
RDS(ON)
< 16mΩ (VGS=10V)
< 19mΩ (VGS=10V)
< 22mΩ (VGS=4.5V)
< 28mΩ (VGS=4.5V)
100% UIS Tested 100% Rg Tested
ESD Protected 100% UIS Tested 100% Rg Tested
SOIC-8 Top View
SRFETTM Soft Recovery MOSFET: Integrated Schottky Diode
Bottom View Top View S1
D1
D1 D1 D2
G1 S2 G2
TM
D2
G2 G1
D2
S2
S1 Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max FET1 Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current Pulsed Drain Current
±20
±20
V
8.8
8
7.1
6.5
IDM
60
40
IAS, IAR
21
13
A
EAS, EAR
66
25
mJ
2
2
1.3
1.3
ID
TA=70°C C
Avalanche energy L=0.3mH
C
TA=25°C
PD
TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev.4.0: July 2013
Units V
VGS TA=25°C
Avalanche Current C
Power Dissipation B
Max FET2 30
TJ, TSTG
Symbol t ≤ 10s Steady-State Steady-State
RθJA RθJL
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-55 to 150
Typ 48 74 32
A
W °C
Max 62.5 90 40
Units °C/W °C/W °C/W
Page 1 of 8
AO4948
FET1 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Min
Conditions ID=250uA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
VGS(th)
Gate Threshold Voltage On state drain current
VDS=VGS ID=250µA
1.1
VGS=10V, VDS=5V
60
V
TJ=125°C
VGS=10V, ID=8.8A
20 100
nA
2.2
V
13.3
16
20
25 22
A
Static Drain-Source On-Resistance VGS=4.5V, ID=7A
18
gFS
Forward Transconductance
VDS=5V, ID=8.8A
29
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode + Schottky Continuous Current
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance Crss
Reverse Transfer Capacitance
Rg
Gate resistance
0.41
1267 VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
mA
1.65
RDS(ON)
Output Capacitance
Units
0.1
Zero Gate Voltage Drain Current
Coss
Max
30
VDS=30V, VGS=0V
IDSS
ID(ON)
Typ
mΩ mΩ S
0.5
V
3.5
A
1600
pF
308
pF
118
pF Ω
1.3
2.0
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
21
30
Qg(4.5V) Total Gate Charge
10.4
nC
VGS=10V, VDS=15V, ID=8.8A
nC
Qgs
Gate Source Charge
3
nC
Qgd
Gate Drain Charge
3.6
nC
tD(on)
Turn-On DelayTime
5.2
ns
tr
Turn-On Rise Time
3.8
ns
tD(off)
Turn-Off DelayTime
21.2
ns
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8.8A, dI/dt=300A/µs
11.2
Qrr
Body Diode Reverse Recovery Charge IF=8.8A, dI/dt=300A/µs
10.5
VGS=10V, VDS=15V, RL=1.7Ω, RGEN=3Ω
4.4
ns 15
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: July 2013
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Page 2 of 8
AO4948
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
30 10V
VDS=5V
5V
6V
25
80 4.5V
7V
20 ID(A)
ID (A)
60 4V
15
40 10
3.5V 20
5
VGS=3V
25°C
0
0 0
1
2
3
4
5
1
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
2
3
4
5
VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance
20 18 RDS(ON) (mΩ Ω)
125°C
VGS=4.5V 16 14 12
VGS=10V
10
VGS=10V ID=8.8A
1.6 1.4
17 5 2 VGS=4.5V10
1.2
ID=7A
1 0.8
0
5
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
40
25
50
75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02 ID=8.8A
35
1.0E+01
30
1.0E+00
25
125°C
20
IS (A)
RDS(ON) (mΩ Ω)
125°C
40
15
1.0E-01
25°C
1.0E-02 1.0E-03
25°C 10
1.0E-04
5
1.0E-05 2
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.4.0: July 2013
4
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0.0
0.2
0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 8
AO4948
FET1: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
2000 VDS=15V ID=8.8A 1500 Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1000 Coss 500
2
0
5
10 15 20 Qg (nC) Figure 7: Gate-Charge Characteristics
0
25
100.0
5 10 V (Volts) 15 20 25 DS Figure 8: Capacitance Characteristics
30
1000
1ms 10ms TJ(Max)=150°C TA=25°C
DC
100
Power (W)
100µs
1.0
0.1
TA=25°C
10µs
RDS(ON) limited
10.0
ID (Amps)
Crss
0
0
10
10s
1
0.0 0.01
0.1
1 VDS (Volts)
10
1E-05
100
0.001
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01 Single Pulse
Ton
T
0.001 1E-05
Rev.4.0: July 2013
0.0001
0.001
0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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100
1000
Page 4 of 8
AO4948
FET2 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS
ID=250µA, VGS=0V VDS=30V, VGS=0V
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±16V
VGS(th)
Gate Threshold Voltage On state drain current
VDS=VGS ID=250µA VGS=10V, VDS=5V VGS=10V, ID=8A
ID(ON)
Min
Conditions
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
V 5
1.2
VGS=4.5V, ID=4A VDS=5V, ID=8A IS=1A,VGS=0V
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
µA
10
µA
1.8
2.4
V
15.5
19
21
25
18.6
28
40
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
Units
1
TJ=125°C
Static Drain-Source On-Resistance
Max
30
TJ=55°C
RDS(ON)
Coss
Typ
A
30 0.75
mΩ mΩ S
1
V
2.5
A
600
740
888
pF
77
110
145
pF
50
82
115
pF
0.5
1.1
1.7
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
12
15
18
nC
Qg(4.5V) Total Gate Charge
6
7.5
9
nC
2
2.5
3
nC
2
3
5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
VGS=10V, VDS=15V, ID=8A
VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω
5
ns
3.5
ns
19
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=500A/µs
6
8
10
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=500A/µs
14
18
22
3.5
ns ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.4.0: July 2013
www.aosmd.com
Page 5 of 8
AO4948
FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30
30 10V
VDS=5V
4V
25
25
3.5V
5V 20 ID(A)
ID (A)
20 3V
15
15 10
10 VGS=2.5V
5
25°C
0
0 0
1
2 3 4 VDS (Volts) Fig 1: On-Region Characteristics (Note E)
1
5
1.5
2
2.5
3
3.5
4
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
30 Normalized On-Resistance
1.6
25 RDS(ON) (mΩ Ω)
125°C
5
VGS=4.5V 20
15 VGS=10V 10
VGS=10V ID=8A
1.4
17 5 VGS=4.5V 2 ID=4A 10
1.2
1
0.8 0
5
10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
40
25
50
75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02 ID=8A
1.0E+01
35
40
1.0E+00
25
125°C
-IS (A)
RDS(ON) (mΩ Ω)
30
1.0E-01
125°C
1.0E-02
20 1.0E-03 15
25°C
25°C
1.0E-04
10
1.0E-05 2
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.4.0: July 2013
4
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0.0
0.2
0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 6 of 8
AO4948
FET2: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
1200 VDS=15V ID=8A
1000
8
Capacitance (pF)
VGS (Volts)
Ciss 6
4
800 600 400 Coss
2
200
0
0
Crss 0
3 6 g (nC) 9 12 Q Figure 7: Gate-Charge Characteristics
5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
1000
100.0
1ms
10ms DC
TJ(Max)=150°C TA=25°C
100
Power (W)
100µs
1.0
0.1
TA=25°C
10µs
RDS(ON) limited
10.0
-ID (Amps)
0
15
10
10s
0.0
1 0.01
0.1
1 -VDS (Volts)
10
100
1E-05
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.001
0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1 PD
0.01
Ton
T
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.4.0: July 2013
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Page 7 of 8
AO4948
Gate Charge Test Circuit & W aveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & W aveforms RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev.4.0: July 2013
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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Page 8 of 8
