Transcript
AO6402A 30V N-Channel MOSFET
General Description
Product Summary
The AO6402A uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications. The source leads are separated to allow a Kelvin connection to the source, which may be used to bypass the source inductance.
VDS (V) = 30V ID = 7.5A RDS(ON) < 24mΩ RDS(ON) < 35mΩ
(VGS = 10V) (VGS = 10V) (VGS = 4.5V)
TSOP6 Top View
D
Bottom View
Top View
D
1
6
D
D
2
5
D
G
3
4
S
G S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current A,F Pulsed Drain Current
B
Junction and Storage Temperature Range
Maximum Junction-to-Lead C
±20
V
ID
6.0
IDM
64
-55 to 150
Symbol
Alpha & Omega Semiconductor, Ltd.
W
1.28
TJ, TSTG
t ≤ 10s Steady-State Steady-State
A
2.0
PD
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Units V
7.5
TA=70°C TA=25°C
Power Dissipation
Maximum 30
RθJA RθJL
Typ 48 74 54
°C
Max 62.5 110 68
Units °C/W °C/W °C/W
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AO6402A
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
64
TJ=55°C
VGS=10V, ID=7.5A TJ=125°C VGS=4.5V, ID=5.6A gFS
Forward Transconductance
VDS=5V, ID=7.5A
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
5
VGS=0V, VDS=0V, f=1MHz
µA
100
nA
2.1
2.6
V
17.3
24
25
34
25
35
mΩ
1
V
2.5
A
A
20 0.75
373 VGS=0V, VDS=15V, f=1MHz
Units V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
448
pF
67
pF
41
pF Ω
2
2.8
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
7.2
11
nC
Qg(4.5V) Total Gate Charge
3.5
5
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=15V, ID=7.5A
1.3
nC
1.7
nC
4.5
6.5
ns
2.7
4.5
ns
14.9
23
ns
2.9
5.5
ns
10.5
12.6
ns nC
VGS=10V, VDS=15V, RL=2Ω, RGEN=3Ω IF=7.5A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=7.5A, dI/dt=100A/µs
4.5
5.4
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. F.The current rating is based on the t ≤ 10s thermal resistance rating. Rev4: April. 2012
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO6402A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60
15 10V
6V
50
VDS=5V
12
VDS=5V
9
4.5V ID(A)
ID (A)
40 30
6 20
VGS=3.5V
10 0
25°
0 0
1
2
3
4
5
1.5
VDS (Volts) Fig 1: On-Region Characteristics
Normalized On-Resistance
VGS=4.5V 35 RDS(ON) (mΩ Ω)
2.5
3
1.8
40
30 25 20 15
1.6
VGS=10V Id=7.5A
5
10
15
4
4.5
20
67 41 1.2
1.8
1.2 1
VGS=4.5V Id=5.6A 4.5
0.8 0.6
0
3.5
11 5
1.4
VGS=10V
10
0
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
25
50
23 5.5 10.5 12.6 75 100 125 150 4.5 Temperature (°C) 5.4
175
Figure 4: On-Resistance vs. Junction Temperature
60
1.0E+01 ID=7.5A
1.0E+00 1.0E-01
40 125°C
IS (A)
RDS(ON) (mΩ Ω)
2
VGS(Volts) Figure 2: Transfer Characteristics
45
50
25°C
125°C 125°C 3
125°C
1.0E-02 30 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 1.0E-03 25°C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 20 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, 1.0E-04 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25°C 10 1.0E-05 2 4 6 8 10 0.0 0.2 0.4 0.6 0.8 1.0 VGS (Volts) VSD (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage Figure 6: Body-Diode Characteristics
Alpha & Omega Semiconductor, Ltd.
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AO6402A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 600
10 VDS=15V ID=7.5A
500 Capacitance (pF)
VGS (Volts)
8 6 4
300
100
0
Crss
0 0
2
4 6 Qg (nC) Figure 7: Gate-Charge Characteristics
8
0
100.0
100µs
1.0
1ms 10ms
0.1
10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
TJ(Max)=150°C TA=25°C
RDS(ON) limited
TJ(Max)=150°C TA=25°C
0.1s
DC
Power (W)
10.0
5
30
10µs
ID (Amps)
Coss
200
2
20
10
10s 0
0.0 0.01
0.1
1 VDS (Volts)
10
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
10 Zθ JA Normalized Transient Thermal Resistance
Ciss
400
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=110°C/W
100
0.001
0.01
0.1
1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton Single Pulse
T
0.01 0.00001
0.0001
0.001
0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Alpha & Omega Semiconductor, Ltd.
100
1000
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AO6402A
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Alpha & Omega Semiconductor, Ltd.
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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