Transcript
AO6409 20V P-Channel MOSFET
General Description
Product Summary
The AO6409 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch applications.
VDS
-20V
ID (at VGS=-4.5V)
-5.5A
RDS(ON) (at VGS= -4.5V)
< 41mΩ
RDS(ON) (at VGS= -2.5V)
< 53mΩ
RDS(ON) (at VGS= -1.8V)
< 65mΩ
ESD Protected
TSOP6 Top View
D
Bottom View
Top View D
1
6
D
D
2
5
D
G
3
4
S
G
S Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current
C
Power Dissipation B
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 5: Sep 2011
Steady-State Steady-State
A
2.1
W
1.3
TJ, TSTG
Symbol t ≤ 10s
V
-30
PD
TA=70°C
±8 -4.2
IDM TA=25°C
Units V
-5.5
ID
TA=70°C
Maximum -20
RθJA RθJL
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-55 to 150
Typ 48 75 37
°C
Max 60 90 45
Units °C/W °C/W °C/W
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AO6409
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS
Conditions
Min
ID=-250µA, VGS=0V
-20 -1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=-250µΑ
-0.3
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-30
TJ=55°C
-5 ±10
µA V
34
41
49
59
VGS=-2.5V, ID=-4A
42
53
mΩ
VGS=-1.8V, ID=-2A
52
65
mΩ
20
TJ=125°C
Forward Transconductance
VDS=-5V, ID=-5.5A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Coss
Output Capacitance Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=-10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge Qgs
Gate Source Charge
Qgd
Gate Drain Charge
µA
-0.9
gFS
Crss
Units
-0.57
VGS=-4.5V, ID=-5.5A Static Drain-Source On-Resistance
Max
V
VDS=-20V, VGS=0V
IDSS
RDS(ON)
Typ
VGS=-4.5V, VDS=-10V, ID=-5.5A
A
-0.64
mΩ
S -1
V
-2
A
905
pF
600
751
80
115
150
pF
48
80
115
pF
6
13
20
Ω
7.4
9.3
11
nC
0.8
1
1.2
nC
1.3
2.2
3.1
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-5.5A, dI/dt=500A/µs
20
26
32
Qrr
Body Diode Reverse Recovery Charge IF=-5.5A, dI/dt=500A/µs
40
51
62
VGS=-4.5V, VDS=-10V, RL=1.8Ω, RGEN=3Ω
13
ns
9
ns
19
ns
29
ns ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: Sep 2011
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AO6409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 40
15 -8V
-4.5V
VDS=-5V
35 -3.0V
12
30 -2.5V
9 -ID(A)
-ID (A)
25 20 -2.0V
15
6
10
3
5
25°C
0
0 0
1
2 3 4 -VDS (Volts) Fig 1: On-Region Characteristics (Note E)
0
5
80
0.5
1 1.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E)
2
Normalized On-Resistance
1.60
70 VGS=-1.8V RDS(ON) (mΩ Ω)
125°C
VGS=-1.5V
60 50
VGS=-2.5V
40
VGS=-4.5V
30
ID=-5.5A, VGS=-4.5V 1.40
ID=-4A, VGS=-2.5V
1.20 ID=-2A, VGS=-1.8V 1.00
0.80
20 0
2
0
4
6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
120
25
50
75 100 125 150 175 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E)
1.0E+01 ID=-5.5A 1.0E+00 1.0E-01
80
-IS (A)
RDS(ON) (mΩ Ω)
100
60
125°C
125°C
25°C
1.0E-02 1.0E-03
40
1.0E-04 25°C
1.0E-05
20 0
4 6 8 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 5: Sep 2011
2
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO6409
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400
5 VDS=-10V ID=-5.5A
1200 Capacitance (pF)
-VGS (Volts)
4
3
2
1000 Ciss 800 600 400 Coss
1 200
Crss
0
0 0
2
4
6 8 10 Qg (nC) Figure 7: Gate-Charge Characteristics
0
12
5
10 15 -VDS (Volts) Figure 8: Capacitance Characteristics
1000
100.0
TJ(Max)=150°C TA=25°C
10.0
RDS(ON) limited
100µs 1ms
1.0
10ms DC 0.1
Power (W)
10µs -ID (Amps)
20
100
10
100ms
TJ(Max)=150°C TA=25°C
10s 1
0.0
0.00001 0.01
0.1
1
10
0.001
0.1
10
1000
100
-VDS (Volts)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=90°C/W
0.1
PD
0.01 Single Pulse
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 5: Sep 2011
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Page 4 of 5
AO6409
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT Vgs Ig
Charge
R esistive Sw itching Test C ircuit & W aveform s RL V ds
t o ff
to n
Vgs
-
DUT
Vgs
V DC
td(o n)
t d(o ff)
tr
tf
90%
V dd
+
Rg
V gs
10% V ds
D iode R e covery Te st C ircuit & W aveform s Q rr = -
V ds +
Idt
DUT V gs
Vds Isd V gs Ig
Rev 5: Sep 2011
L
-Isd
+ V dd
t rr
dI/dt -I R M V dd
VDC
-
-I F
-Vds
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