Transcript
AO6601 30V Complementary MOSFET
General Description
Product Summary
The AO6601 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs form a high-speed power inverter, suitable for a multitude of applications.
N-Channel VDS= 30V
P-Channel -30V
ID= 3.4A (VGS=10V)
-2.3A (VGS=-10V)
RDS(ON)
RDS(ON)
< 60mΩ (VGS=10V)
< 115mΩ (VGS=-10V)
< 70mΩ (VGS=4.5V)
< 150mΩ (VGS=-4.5V)
< 90mΩ (VGS=2.5V)
< 200mΩ (VGS=-2.5V)
TSOP6 Top View
D1
Bottom View
D2
Top View
G1
1
6
D1
S2
2
5
S1
G2
3
4
D2
G1
G2 S1
Pin1
n-channel
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max n-channel Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current
VGS TA=25°C
ID
TA=70°C
Pulsed Drain Current C
IDM TA=25°C
Power Dissipation B
PD
TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 6: Dec. 2012
Steady-State Steady-State
Max p-channel -30
Units V
±12
±12
V
3.4
-2.3
2.7
-1.8
20
-15
1.15
1.15
0.73
0.73
TJ, TSTG
Symbol t ≤ 10s
RθJA RθJL
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S2
p-channel
-55 to 150
Typ 78 106 64
A
W °C
Max 110 150 80
Units °C/W °C/W °C/W
Page 1 of 9
AO6601
N-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Typ
Max
Units
30
V
VDS=30V, VGS=0V
1 TJ=55°C
µA
5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
±100
nA
1
1.5
V
46
60
73
88
VGS=4.5V, ID=3A
50
70
mΩ
90
mΩ
1
V
1.5
A
VGS=10V, ID=3.4A TJ=125°C
A
RDS(ON)
Static Drain-Source On-Resistance
VGS=2.5V, ID=2A
62
gFS
Forward Transconductance
VDS=5V, ID=3.4A
14
VSD
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance
0.75
mΩ
S
185
235
285
pF
25
35
45
pF
10
18
25
pF
0.9
1.8
2.7
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
10
12
nC
Qg(4.5V) Total Gate Charge
4.7
6
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=3.4A
0.95
nC nC
Qgd
Gate Drain Charge
1.6
tD(on)
Turn-On DelayTime
3.5
ns
tr
Turn-On Rise Time
1.5
ns
tD(off)
Turn-Off DelayTime
17.5
ns
tf trr
Turn-Off Fall Time
2.5
ns
Qrr
VGS=10V, VDS=15V, RL=4.4Ω, RGEN=3Ω IF=3.4A, dI/dt=100A/µs
Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge IF=3.4A, dI/dt=100A/µs
8.5
12
2.55
4
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Dec. 2012
www.aosmd.com
Page 2 of 9
AO6601
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
15 10V
VDS=5V 2.5V
3V
12
12
4.5V 9 ID(A)
ID (A)
9
6
6 VGS=2V
125°C
3
3
0
0 0
1
2
3
4
0
5
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
0.5
1
1.5
2
2.5
3
VGS(Volts) Figure 2: Transfer Characteristics (Note E) 2 Normalized On-Resistance
80 VGS=2.5V
70 RDS(ON) (mΩ Ω)
25°C
60
VGS=4.5V
50 40
VGS=10V
30
1.8
VGS=4.5V ID=3A
1.6
17 1.4
VGS=2.5V 5 ID=2A
1.2
VGS=10V ID=3.4A
1
2 10
0.8 0
2
4
6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
140
25
50
75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02 ID=3.4A 1.0E+01
120
40
1.0E+00 125°C IS (A)
RDS(ON) (mΩ Ω)
100 80
1.0E-01
125°C
1.0E-02 60
25°C
25°C
1.0E-03
40
1.0E-04
20
1.0E-05 0
4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 6: Dec. 2012
2
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0.0
0.2
0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 9
AO6601
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
500 VDS=15V ID=3.4A 400 Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
300
200 Coss
2
100
0
0
Crss 0
3
6 9 Qg (nC) Figure 7: Gate-Charge Characteristics
0
12
100.0
5
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
1000 TA=25°C
RDS(ON) limited
10µs 100µs
1.0
10ms 1ms TJ(Max)=150°C TA=25°C
0.1
DC
100
Power (W)
ID (Amps)
10.0
10
10s
1
0.0 0.01
0.1
1 VDS (Volts)
10
100
0.00001
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.001
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
RθJA=150°C/W
0.1
PD
Single Pulse
0.01
Ton
T
0.001 0.00001
Rev 6: Dec. 2012
0.0001
0.001
0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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100
1000
Page 4 of 9
AO6601
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 6: Dec. 2012
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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Page 5 of 9
AO6601
P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS
Conditions
Min
ID=-250µA, VGS=0V VDS=-30V, VGS=0V
-30
IDSS
Zero Gate Voltage Drain Current
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage
ID(ON)
On state drain current
VDS=VGS ID=-250µA VGS=-10V, VDS=-5V VGS=-10V, ID=-2.3A
gFS
Forward Transconductance
VSD
Diode Forward Voltage
IS
Maximum Body-Diode Continuous Current
-0.6
Output Capacitance Reverse Transfer Capacitance
Rg
Gate resistance
V µA
±100
nA
-1
-1.4
V
88
115
143
200
103
150
mΩ
139
200
mΩ
-15
VGS=-4.5V, ID=-2A VGS=-2.5V, ID=-1A VDS=-5V, ID=-2.3A IS=-1A,VGS=0V
DYNAMIC PARAMETERS Ciss Input Capacitance Crss
Units
-5
TJ=125°C
Static Drain-Source On-Resistance
Max
-1
TJ=55°C
RDS(ON)
Coss
Typ
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
A mΩ
8 -0.78
S -1
V
-1.5
A
205
260
315
pF
25
37
50
pF
10
20
30
pF
4
8
12
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
4.5
5.9
7
nC
Qg(4.5V) Total Gate Charge
2
2.8
4
nC
VGS=10V, VDS=-15V, ID=-2.3A
Qgs
Gate Source Charge
0.7
nC
Qgd tD(on)
Gate Drain Charge
1
nC
Turn-On DelayTime
6
tr
Turn-On Rise Time
ns
3.5
ns
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time
20
ns
5 IF=-2.3A, dI/dt=100A/µs
ns
11.5
15
Qrr
Body Diode Reverse Recovery Charge IF=-2.3A, dI/dt=100A/µs
4.5
6
Body Diode Reverse Recovery Time
VGS=10V, VDS=-15V, RL=6Ω, RGEN=3Ω
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: Dec. 2012
www.aosmd.com
Page 6 of 9
AO6601
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
15 -10V
VDS=-5V
-4.5V -3V
12
8
6 -2.5V
-ID(A)
-ID (A)
9
4
6
125°C 25°C
VGS=-2V
3
2
0
0 0
1
2
3
4
0
5
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
1
1.5
2
2.5
3
3.5
4
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
210
2 Normalized On-Resistance
VGS=-2.5V
190 170 RDS(ON) (mΩ Ω)
0.5
150 VGS=-4.5V
130 110 90
VGS=-10V
70 50
VGS=-10V ID=-2.3A
1.8 1.6
17 5 VGS=-4.5V ID=-2A 2 10
1.4 1.2 VGS=-2.5V ID=-1A
1 0.8
0
2
4 6 8 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
250
25
50
75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02 ID=-2.3A 1.0E+01
40
1.0E+00 125°C
125°C -IS (A)
RDS(ON) (mΩ Ω)
200
150
1.0E-01 25°C 1.0E-02
25°C 1.0E-03
100
1.0E-04 50
1.0E-05 0
4 6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 6: Dec. 2012
2
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0.0
0.2
0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 9
AO6601
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
500 VDS=-15V ID=-2.3A 400 Capacitance (pF)
-VGS (Volts)
8
6
4
Ciss 300
200 Coss
2
100
0
0 0
1
2
3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics
Crss 0
6
5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
30
1000
100.0
TA=25°C
RDS(ON) limited
10µs 100µs
1.0
1ms
10ms 0.1
100
Power (W)
-ID (Amps)
10.0
10
DC
TJ(Max)=150°C TA=25°C
10s
0.0
1 0.01
0.1
1 -VDS (Volts)
10
100
0.00001
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.001
0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=150°C/W
0.1
0.01
PD Single Pulse Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6: Dec. 2012
www.aosmd.com
Page 8 of 9
AO6601
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev 6: Dec. 2012
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
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Page 9 of 9
