Transcript
AO6801 30V Dual P-Channel MOSFET
General Description
Product Summary
The AO6801 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
ID (at VGS=-10V)
VDS
-30V -2.3A
RDS(ON) (at VGS =-10V)
< 115mΩ
RDS(ON) (at VGS =-4.5V)
< 150mΩ
RDS(ON) (at VGS =-2.5V)
< 200mΩ
TSOP6 Top View
D1
Bottom View
D2
Top View
G1
1
6
D1
S2
2
5
S1
G2
3
4
D2
G1
G2 S1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current
C
Power Dissipation B
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 4: April 2011
Steady-State Steady-State
V A
-11 W
0.73 -55 to 150
TJ, TSTG
Symbol t ≤ 10s
±12
1.15
PD
TA=70°C
Units V
-2
IDM TA=25°C
Maximum -30 -2.3
ID
TA=70°C
S2
RθJA RθJL
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Typ 78 106 64
°C
Max 110 150 80
Units °C/W °C/W °C/W
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AO6801
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-30 -1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.6
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-11
TJ=55°C
-5
VDS=0V, VGS= ±12V
±100
VGS=-10V, ID=-2.3A Static Drain-Source On-Resistance
TJ=125°C
V A
88
115
143
190
mΩ
103
150
mΩ
200
mΩ
8
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
-0.78
DYNAMIC PARAMETERS Input Capacitance Ciss Reverse Transfer Capacitance
-1.4
nA
139
VDS=-5V, ID=-2.3A
Crss
-1
µA
VGS=-4.5V, ID=-2A
Forward Transconductance
Output Capacitance
Units
VGS=-2.5V, ID=-1A gFS
Coss
Max
V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
260 VGS=0V, VDS=-15V, f=1MHz
S -1
V
-1.5
A
315
pF
37
pF
20
pF
8
12
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
5.9
7
nC
Qg(4.5V) Total Gate Charge
2.8
4
nC
Rg
Gate resistance
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-2.3A
4
Qgs
Gate Source Charge
0.7
nC
Qgd
Gate Drain Charge
1
nC
tD(on)
Turn-On DelayTime
6
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=6.5Ω, RGEN=3Ω
3.5
ns
20
ns
5
ns
trr
Body Diode Reverse Recovery Time
IF=-2.3A, dI/dt=100A/µs
11.5
Qrr
Body Diode Reverse Recovery Charge IF=-2.3A, dI/dt=100A/µs
4.5
15
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: April 2011
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AO6801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
10 -4.5V
-10V
VDS=-5V
12
8
-3V
6
9 -ID(A)
-ID (A)
-6V -2.5V
4
6 VGS=-2V
3
125°C
2
25°C
0
0 0
1
2
3
4
0
5
1
-VDS (Volts) Fig 1: On-Region Characteristics (Note E) 210
3
4
2 Normalized On-Resistance
190 VGS=-2.5V
170 RDS(ON) (mΩ )
2
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
150 130
VGS=-4.5V
110 90 VGS=-10V
70
1.8
VGS=-10V ID=-2.3A
1.6 1.4 1.2
VGS=-4.5V ID=-2A
1
17 5 2 VGS=-2.5V ID=-1A 10
0.8
50 0
1
0
2
3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
250
1.0E+02 ID=-2.3A 1.0E+01
40
200
1.0E+00 -IS (A)
RDS(ON) (mΩ )
125°C 150
125°C
1.0E-01 1.0E-02
25°C
1.0E-03
100
25°C 1.0E-04 1.0E-05
50 0
2
4
6
8
10
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 4: April 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO6801
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400
10 VDS=-15V ID=-2.3A 8
Ciss
Capacitance (pF)
-VGS (Volts)
300 6
4
200
100
Coss
2
0
Crss
0 0
1
2
3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics
6
0
5
10
15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
30
10000
100.0
TA=25°C
1.0
1000
10µs
RDS(ON) limited
Power (W)
ID (Amps)
10.0
100µ 1ms 10ms
0.1
TJ(Max)=150°C TA=25°C
100
10
10s DC
0.0
1
0.01
0.1
1 VDS (Volts)
10
100
0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=150°C/W
0.1 PD 0.01
Single Pulse
Ton T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 4: April 2011
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Page 4 of 5
AO6801
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev 4: April 2011
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
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