Transcript
AO6804A 20V Dual N-Channel MOSFET
General Description
Product Summary
The AO6804A uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a load switch applications.
VDS = 20V (VGS = 4.5V) ID = 5.0A RDS(ON) < 28mΩ (VGS = 4.5V) RDS(ON) < 30mΩ (VGS = 4.0V) RDS(ON) < 34mΩ (VGS = 3.1V) RDS(ON) < 39mΩ (VGS = 2.5V)
TSOP6 Top View
Bottom View
D1 11
Top View
S1
1
6
G1
D2 11
Rg
D1/D2
2
5
D1/D2
S2
3
4
G2
Rg
G1
G2
S1
S2
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter VDS Drain-Source Voltage Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current A Pulsed Drain Current Power Dissipation A
B
TA=25°C
±12
V
ID
4
IDM
25
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
W
0.8
TJ, TSTG
Symbol t ≤ 10s Steady State Steady State
A
1.3
PD
TA=70°C
Maximum Junction-to-Lead C
Units V
5
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
20
Maximum
RθJA RθJL
-55 to 150
Typ 76 118 54
Max 95 150 68
°C
Units °C/W °C/W °C/W
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AO6804A
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter
Symbol
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID = 250µA, VGS = 0V TJ = 55°C
5 ±10
υA
1
V
18
23
28
26
33
40
VGS = 4.0V, ID = 4.5A
19
24
30
mΩ
VGS = 3.1V, ID = 4.5A
20
27
34
mΩ
VGS = 2.5V, ID = 4.0A
21
30
39
mΩ
1
V
1.3
A
225
pF
VDS = 0V, VGS = ±10V
Gate Threshold Voltage
VDS = VGS ID = 250µA
0.5
ID(ON)
On state drain current
VGS = 4.5V, VDS = 5V
25
VGS = 4.5V, ID = 5.0A TJ=125°C
gFS
Forward Transconductance
VDS = 5V, ID = 5.0A
VSD
Diode Forward Voltage
IS = 1A,VGS = 0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Coss
Output Capacitance Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
A
VGS=0V, VDS=10V, f=1MHz
mΩ
18 0.65
180
S
95
pF
18
pF
VGS=0V, VDS=0V, f=1MHz
2.7
4
kΩ
5.6
7.5
nC
VGS= 4.5V, VDS= 10V, ID= 5A
0.85
nC
SWITCHING PARAMETERS Total Gate Charge Qg Qgs
µA
0.7
Gate-Body leakage current
Crss
Units V
1
IGSS
Static Drain-Source On-Resistance
Max
20
VDS = 20V, VGS = 0V
VGS(th)
RDS(ON)
Typ
Qgd
Gate Drain Charge
1.7
nC
tD(on)
Turn-On DelayTime
172
ns
tr
Turn-On Rise Time
368
ns
tD(off)
Turn-Off DelayTime
tf trr Qrr
Turn-Off Fall Time Body Diode Reverse Recovery Time
VGS=10V, VDS=10V, RL=2.0Ω, RGEN=3Ω
IF=5A, dI/dt=100A/µs I Body Diode Reverse Recovery Charge F=5A, dI/dt=100A/µs
2.94
υs
2.5 32 3.2
υs ns nC
43
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A = 25°C. in any given application depends on the user's specific board design. The current rating is based on the t ≤10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using < 300µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in curve provides a single pulse rating.
2
FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA
Rev2: Nov. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AO6804A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25
25 4.5V
3V
20
VDS= 5V
2.5V
20
1.8V
15 ID(A)
ID (A)
15
2V
10
10
5
25°C
5
VGS=1.5V
125°C -40°C
0
0 0
1
2
3
4
5
0
0.5
VDS (Volts) Figure 1: On-Region Characteristics
1.5
2
2.5
3
VGS(Volts) Figure 2: Transfer Characteristics
32 Normalized On-Resistance
1.6
30 VGS= 2.5V RDS(ON) (mΩ )
1
28 VGS= 3.1V
26 24
VGS= 4.0V
VGS= 4.5V ID= 5A
1.4 1.2 1.0 0.8
VGS= 4.5V 22
0.6 0
2
4
I6F=-6.5A, 8dI/dt=100A/µs 10
-50
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
0
25
50
75
100 125 150 175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
1E+01
80 ID= 5.0A
1E+00
70
1E-01 IS (A)
60 RDS(ON) (mΩ )
-25
50
125°C
1E-02
1E-03 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL 40 125°C COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING 1E-04 -40°C OUT OF PRODUCT DESIGN, 30 SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE 25°C 1E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 20 1E-06 -40°C 10 1
2
3
4
5 6 7 8 9 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
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AO6804A
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000
5 VDS= 10V ID= 5A Capacitance (pF)
VGS (Volts)
4
3
2
Ciss 100 Coss
Crss
1
0
10 0
1
2
3
4
5
6
7
0
Qg (nC) Figure 7: Gate-Charge Characteristics
5
10
15
20
VDS (Volts) Figure 8: Capacitance Characteristics
1000
100
TJ(Max)=150°C TA=25°C 10µs 100µs 1
RDS(ON) limited
1ms 10ms 100ms
100 Power (W)
ID (Amps)
10
0.1
1 TJ(Max)=150°C TA=25°C
DC
0.01 0.1
10s
0.1 0.00001
IF=-6.5A, dI/dt=100A/µs 10 100
1
VDS (Volts)
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=150°C/W
0.001
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note E)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Zθ JA Normalized Transient Thermal Resistance
10
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL PD COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH 0.01APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, Ton FUNCTIONS AND RELIABILITY WITHOUT Single Pulse NOTICE. T 0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance(Note E)
Alpha & Omega Semiconductor, Ltd.
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AO6804A
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
Vgs
10% Vgs
td(on)
tr
td(off)
ton
tf toff
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds -
Isd
L
Vgs Ig
Alpha & Omega Semiconductor, Ltd.
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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