Transcript
AO6810 30V Dual N-Channel MOSFET
General Description
Product Summary
The AO6810 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
ID (at VGS=10V)
VDS
30V 3.5A
RDS(ON) (at VGS=10V)
< 50mΩ
RDS(ON) (at VGS = 4.5V)
< 70mΩ
TSOP6
D1
D2
Top View G1
1 2
6 5
D1
S2 G2
3
4
D2
S1 G1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Symbol Parameter Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current
VGS TA=25°C
TA=25°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 1: Mar 2011
Steady-State Steady-State
±20
V A
1.15
W
0.73
TJ, TSTG
Symbol t ≤ 10s
Units V
20
PD
Junction and Storage Temperature Range
Maximum 30
3
IDM TA=70°C
S2
3.5
ID
TA=70°C
Pulsed Drain Current C Power Dissipation B
G2 S1
RθJA RθJL
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°C
-55 to 150
Typ 78 106 64
Max 110 150 80
Units °C/W °C/W °C/W
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AO6810
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS
Conditions
Min
ID=250µA, VGS=0V
IGSS VGS(th)
Gate-Body leakage current
VDS=0V, VGS= ±20V
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
20 TJ=125°C
VGS=4.5V, ID=2A gFS
Forward Transconductance
VDS=5V, ID=3.5A
Diode Forward Voltage
IS=1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
±100
nA
2
2.5
V
40
50
61
77
52
70
mΩ
1
V
1.5
A
210
pF
A mΩ
12 0.79
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
µA
5
VGS=10V, ID=3.5A
Coss
V
TJ=55°C
VSD
Units
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
170 VGS=0V, VDS=15V, f=1MHz
S
35
pF
23
pF
3.5
5.3
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
4.05
5
nC
Qg(4.5V) Total Gate Charge
2
3
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=3.5A
1.7
0.55
nC
1
nC
4.5
ns
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time IF=3.5A, dI/dt=100A/µs
7.5
Qrr
Body Diode Reverse Recovery Charge IF=3.5A, dI/dt=100A/µs
2.5
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=4.2Ω, RGEN=3Ω
1.5
ns
18.5
ns
15.5
ns 10
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 1: Mar 2011
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AO6810
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
15 10V
VDS=5V 7V
12
4V
4.5V
8
6
9 ID(A)
ID (A)
3.5V 6
4
3
125°C
25°C
2
VGS=3V
0
0 0
1
2
3
4
0.5
5
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
1.5
2
2.5
3
3.5
4
4.5
VGS(Volts) Figure 2: Transfer Characteristics (Note E) 1.8 Normalized On-Resistance
70
60 RDS(ON) (mΩ Ω)
1
VGS=4.5V 50
40 VGS=10V 30
VGS=10V ID=3.5A
1.6 1.4 1.2
VGS=4.5V ID=2A
17 5 2 10
1 0.8
0
2
4
6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
120
25
50
75 100 125 150 175 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02 ID=3.5A 1.0E+01
40
1.0E+00
125°C 80 IS (A)
RDS(ON) (mΩ Ω)
100
1.0E-01
125°C
1.0E-02
60
25°C 25°C
1.0E-03
40 1.0E-04 20
1.0E-05 2
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 1: Mar 2011
4
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0.0
0.2
0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO6810
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 300
10 VDS=15V ID=3.5A
250 Ciss
Capacitance (pF)
VGS (Volts)
8
6
4
200 150 100 Coss
2
50 Crss
0
0 0
1
2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics
0
5
100.0
5
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
1000 TA=25°C
RDS(ON) limited
10µs 100µs 1ms
1.0
10ms TJ(Max)=150°C TA=25°C
0.1
DC
100 Power (W)
ID (Amps)
10.0
10
10s
1
0.0 0.01
0.1
1 VDS (Volts)
10
100
0.00001
0.001
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junctionto-Ambient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=150°C/W
0.1 PD 0.01
Single Pulse Ton
T
0.001 0.00001
Rev 1: Mar 2011
0.0001
0.001
0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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100
1000
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AO6810
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+ + Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds 90%
+ Vdd
DUT
Vgs
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds Isd Vgs Ig
Rev 1: Mar 2011
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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