Transcript
AO7401 30V P-Channel MOSFET
General Description
Product Summary
The AO7401 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 2.5V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters.
VDS ID (at VGS=-10V)
-30V -1.4A
RDS(ON) (at VGS=-10V)
< 115mΩ
RDS(ON) (at VGS =-4.5V)
< 140mΩ
RDS(ON) (at VGS =-2.5V)
< 200mΩ
SC-70 (SOT-323) Top View
D Bottom View
D
D
G
S
G S
G
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current Power Dissipation
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 6: June 2011
Steady-State Steady-State
A
0.35
W
0.22
TJ, TSTG
Symbol t ≤ 10s
V
-10
PD
TA=70°C
±12 -1.0
IDM TA=25°C
B
Units V
-1.4
ID
TA=70°C C
Maximum -30
RθJA RθJL
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-55 to 150
Typ 300 340 280
°C
Max 360 425 320
Units °C/W °C/W °C/W
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AO7401
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30 -1 TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±12V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.6
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-10
VGS=-10V, ID=-1.4A Static Drain-Source On-Resistance
TJ=125°C
92.5
115
130
160
A mΩ
140
mΩ mΩ
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
6 -0.78
DYNAMIC PARAMETERS Ciss Input Capacitance
Gate resistance
V
200
VDS=-5V, ID=-1.4A
Rg
nA
-1.4
110
Diode Forward Voltage
Output Capacitance
±100 -1
150
Forward Transconductance
Reverse Transfer Capacitance
µA
VGS=-2.5V, ID=-1A VSD
Coss
Units
VGS=-4.5V, ID=-1.2A
gFS
Crss
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
260 VGS=0V, VDS=-15V, f=1MHz
S -1
V
-0.5
A
315
pF
37
pF
20
pF
8
12
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
5.9
7.2
nC
Qg(4.5V) Total Gate Charge
2.8
3.5
nC
Qgs
Gate Source Charge
Qgd tD(on) tr
Turn-On Rise Time
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-1.4A
4
0.7
nC
Gate Drain Charge
1
nC
Turn-On DelayTime
6
ns
3.5
ns
VGS=-10V, VDS=-15V, RL=10Ω, RGEN=3Ω
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
20
ns
5
ns
trr
Body Diode Reverse Recovery Time
IF=-1.4A, dI/dt=100A/µs
11.5
Qrr
Body Diode Reverse Recovery Charge IF=-1.4A, dI/dt=100A/µs
4.5
15
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse ratin g.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 6: June 2011
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AO7401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
10 -10V
12
-4.5V
VDS=-5V 8
-3V
-6V
6 -ID(A)
-ID (A)
9 -2.5V 6 VGS=-2V
3
4
125°C
2
25°C
0
0 0
1
2
3
4
0
5
0.5
210
1.5
2
2.5
3
3.5
4
1.6 Normalized On-Resistance
VGS=-2.5V
190 170 RDS(ON) (mΩ )
1
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
150 VGS=-4.5V
130 110 90
VGS=-10V
70
VGS=-10V ID=-1.4A
1.4
17 1.2
VGS=-4.5V 5 ID=-1.2A 2
10
1 VGS=-2.5V ID=-1A 0.8
50 0
1
0
2
3 4 5 6 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
Temperature (°C) 0 Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
1.0E+02
250 ID=-1.4A
1.0E+01
40
1.0E+00 125°C -IS (A)
RDS(ON) (mΩ )
200
150
25°C
1.0E-02 1.0E-03
25°C
100
125°C
1.0E-01
1.0E-04 1.0E-05
50 0
2
4
6
8
10
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 6: June 2011
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AO7401
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 400
10 VDS=-15V ID=-1.4A 8
Ciss
Capacitance (pF)
-VGS (Volts)
300 6
4
200
Coss
100 2
0
Crss
0 0
1
2
3 4 5 Qg (nC) Figure 7: Gate-Charge Characteristics
6
0
5
10
15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
30
20
100.0
TA=25°C 15
10µs RDS(ON) limited
1.0
100µs 1ms 10ms
0.1
10
5
TJ(Max)=150°C TA=25°C
DC
10s
0.0 0.01
Power (W)
-ID (Amps)
10.0
0.1
1
10
0
100
0.00001
-VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.001
0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=425°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD 0.01 Single Pulse
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 6: June 2011
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AO7401
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgd
Qgs
Vds
+
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
t d(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev 6: June 2011
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
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