Transcript
AO7408 20V N-Channel MOSFET
General Description
Product Summary
The AO7408 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 1.8V. This device is suitable for use as a load switch or in PWM applications.
VDS
Top View
20V 2A
ID (at VGS=10V) RDS(ON) (at VGS=4.5V)
< 62mΩ
RDS(ON) (at VGS=2.5V)
< 75mΩ
RDS(ON) (at VGS=1.8V)
< 85mΩ
SC-70-6 (SOT-363) Bottom View
D
Top View
D D G
6
D
2
5
D
3
4
S
1
G S
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Pin1 Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage
VGS TA=25°C
Continuous Drain Current Pulsed Drain Current C Power Dissipation
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Lead
Rev 4: May 2015
Steady-State Steady-State
A
0.35
W
0.22
TJ, TSTG
Symbol t ≤ 10s
V
16
PD
TA=70°C
±8 1.5
IDM TA=25°C
B
Units V
2
ID
TA=70°C
Maximum 20
RθJA RθJL
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-55 to 150
Typ 300 340 280
°C
Max 360 425 320
Units °C/W °C/W °C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
Conditions
Min
ID=250µA, VGS=0V
1 TJ=55°C
VDS=0V, VGS=±8V
±100
nA
0.7
1
V
50
62
70
90
VGS=2.5V, ID=1.8A
56
75
mΩ
VGS=1.8V, ID=1A
66
85
mΩ
1
V
0.35
A
320
pF
Gate Threshold Voltage
VDS=VGS ID=250µA
0.4
VGS=4.5V, VDS=5V
16
VGS=4.5V, ID=2A TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=2A
15
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
260 VGS=0V, VDS=10V, f=1MHz
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
mΩ
S
48
pF
27 VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge Qgs
µA
5
On state drain current
Coss
Units V
VDS=20V, VGS=0V
VGS(th)
Static Drain-Source On-Resistance
Max
20
ID(ON)
RDS(ON)
Typ
VGS=4.5V, VDS=10V, ID=2A
pF
3
4.5
Ω
2.9
4
nC
0.4
nC
0.6
nC
2.5
ns
VGS=10V, VDS=10V, RL=5Ω, RGEN=3Ω
3.2
ns
21
ns
IF=2A, dI/dt=100A/µs
14
Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs
3.8
3
ns 19
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 4: May 2015
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 25
20 VDS=5V
4.5V 20
16 2.5V 12 ID(A)
ID (A)
15 2V
8
10
125°C 5
4
VGS=1.5V
0
0 0
1
2
3
4
0
5
0.5
1
1.5
2
2.5
3
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E) 120 Normalized On-Resistance
1.6
100 RDS(ON) (mΩ)
25°C
VGS=1.8V 80 VGS=2.5V
60
VGS=4.5V
40 0
2
VGS=2.5V ID=1.8A
1.4
17 VGS=1.8V ID=1A 5
1.2
2 10
VGS=4.5V ID=2A
1
0.8
4
6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
120
1.0E+01 ID=2A 1.0E+00
40
100
80
IS (A)
RDS(ON) (mΩ)
1.0E-01 125°
125°
1.0E-02
25° 1.0E-03
60 1.0E-04 25° 1.0E-05
40 0
2
4
6
8
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 4: May 2015
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5
400 VDS=10V ID=2A
350 Ciss
300 Capacitance (pF)
VGS (Volts)
4
3
2
250 200 150 Coss
100
1
50 0
Crss
0 0
1
1
2 2 3 3 Qg (nC) Figure 7: Gate-Charge Characteristics
4
0
5
10 15 VDS (Volts) Figure 8: Capacitance Characteristics
20
1000
100.0
TA=25°C
ID (Amps)
10µs 100µs
RDS(ON) limited 1.0
1ms
Power (W)
100
10.0
10
10ms 0.1
TJ(Max)=150°C TA=25°C
0.0 0.01
0.1
1
10s DC 1
10
0.1 0.00001
VDS (Volts)
ZθJA Normalized Transient Thermal Resistance
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
0.1
10
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10
0.001
100
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=425°C/W
0.1
PD
0.01 Single Pulse
Ton 0.001 0.00001
0.0001
0.001
0.01
0.1
1
T 10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 4: May 2015
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Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgd
Qgs
VDC
DUT
-
Vgs Ig Charge
R e s istive S w itch in g T e st C ircu it & W a v e fo rm s RL Vds Vds
DUT
Vgs
90%
+
Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d (o n )
tr
t d (o ff)
ton
tf t o ff
D iode R ecovery T est C ircuit & W aveform s Q rr = -
V ds + DUT
V ds Isd V gs Ig
Rev 4: May 2015
Idt
V gs
Isd
L
+ VDC
-
IF
t rr
dI/dt I RM
V dd
Vdd V ds
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