Transcript
AO7600 Complementary Enhancement Mode Field Effect Transistor General Description
Features
The AO7600 uses advanced trench technology MOSFETs to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used to form a level shifted high side switch, an inverter, and for a host of other applications. Both devices are ESD protected.
n-channel VDS (V) = 20V ID = 0.9A (VGS=4.5V)
p-channel -20V -0.6A (VGS=-4.5V)
RDS(ON) < 300mΩ (VGS=4.5V) < 350mΩ (VGS=2.5V) < 450mΩ (VGS=1.8V)
RDS(ON) < 550mΩ (VGS=-4.5V) < 700mΩ (VGS=-2.5V) < 950mΩ (VGS=-1.8V)
SC70-6L (SOT-363) Pin1
Bottom View
Top View
D2
D1
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
G2
G1
S2
S1
n-channel
p-channel
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS
Max n-channel 20
Max p-channel -20
Gate-Source Voltage
VGS
Continuous Drain Current TA=25°C A TA=70°C
0.9
-0.6
ID
0.7
-0.48
Pulsed Drain Current B
IDM
5
-3
TA=25°C Power Dissipation
TA=70°C
Junction and Storage Temperature Range
±8
Thermal Characteristics: n-channel and p-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C t ≤ 10s Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Ambient A Steady-State Maximum Junction-to-Lead C
Rev 5: April 2015
±8
V A
0.3
0.3
0.19
0.19
-55 to 150
-55 to 150
PD TJ, TSTG
Units V
Symbol RθJA RθJL RθJA RθJL
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W °C
Device n-ch n-ch n-ch
Typ 360 400 300
Max 415 460 350
Units °C/W °C/W °C/W
p-ch p-ch p-ch
360 400 300
415 460 350
°C/W °C/W °C/W
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N-Channel: Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter
Symbol
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
1 TJ=55°C
5 25
µA
0.9
V
181
300
253
330
VGS=2.5V, ID=0.75A
237
350
mΩ
VGS=1.8V, ID=0.7A
317
450
mΩ
1
V
0.4
A
VDS=0V, VGS=±8V VDS=VGS ID=250µA
0.5
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
5
VGS=4.5V, ID=0.9A TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=0.8A
2.6
VSD
Diode Forward Voltage
IS=0.5A,VGS=0V
0.69
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
101 VGS=0V, VDS=10V, f=1MHz
Gate Source Charge
VGS=4.5V, VDS=10V, ID=0.8A
mΩ
S
120
17
pF pF
14 VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Total Gate Charge Qg Qgs
µA
0.75
Gate-Body leakage current Gate Threshold Voltage
Coss
Units V
VDS=16V, VGS=0V
VGS(th)
Static Drain-Source On-Resistance
Max
20
IGSS
RDS(ON)
Typ
pF
3
4
1.57
1.9
Ω nC
0.13
nC
Qgd
Gate Drain Charge
0.36
nC
tD(on)
Turn-On DelayTime
3.2
ns
tr
Turn-On Rise Time
4
ns
tD(off)
Turn-Off DelayTime
15.5
ns
tf trr
Turn-Off Fall Time IF=0.8A, dI/dt=100A/µs
6.7
Qrr
Body Diode Reverse Recovery Charge IF=0.8A, dI/dt=100A/µs
1.6
Body Diode Reverse Recovery Time
VGS=5V, VDS=10V, RL=12.5Ω, RGEN=6Ω
2.4
ns 8.1
ns nC
1in 2
A: The value of R θJA is measured with the device mounted on FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: April 2015
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Page 2 of 8
N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4
10 10V
8V
VDS=5V
5V 8
3
4V
125°C
3.5V ID(A)
ID (A)
6
25°C
3V 4
2
2.5V 1
VGS=2V
2
0
0 0
1
2
3
4
5
0
0.5
VDS (Volts) Fig 1: On-Region Characteristics
1.5
2
2.5
3
VGS(Volts) Figure 2: Transfer Characteristics
480
1.8 VGS=1.8V
440
Normalized On-Resistance
VGS=1.8V
400 RDS(ON) (mΩ)
1
360 320 VGS=2.5V 280 240 VGS=4.5V 200 160
1.6
VGS=2.5V ID=0.75A
ID=0.7A
1.4 VGS=4.5V 1.2
ID=0.9A
1 0.8
0
1
2
3
4
0
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
500
1E+01
460 1E+00 125°
ID=0.9A
380
1E-01
340 300
IS (A)
RDS(ON) (mΩ)
420
125°
1E-02 25°
260
1E-03
220 25°
180
1E-04
140 1
2
3
4
5
6
7
8
1E-05 0.0
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Rev 5: April 2015
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0.4
0.8
1.2
1.6
2.0
VSD (Volts) Figure 6: Body-Diode Characteristics
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N-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200
5 VDS=10V ID=0.9A Capacitance (pF)
VGS (Volts)
4
3
2
150
Ciss
100 Coss
Crss
50
1 0
0
0
0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 2.0
10
TJ(Max)=150°C, RDS(ON) limited
TJ(Max)=150° C
100µs
10ms
1.0
Power (W)
ID (Amps)
12
1ms
0.1s
1s 10s
8
4
DC
0 0.001
0.0 0.1
1
10
100
VDS (Volts)
ZθJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=415°C/W
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
10
20
16 10µs
0.1
15
VDS (Volts) Figure 8: Capacitance Characteristics
Qg (nC) Figure 7: Gate-Charge Characteristics
10.0
5
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse 0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Rev 5: April 2015
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P-Channel Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter
Symbol
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-20 -1 TJ=55°C
-5 ±10
µA V
415
550
542
700
VGS=-2.5V, ID=-0.5A
590
700
mΩ
VGS=-1.8V, ID=-0.4A
700
950
mΩ
VDS=VGS ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-3
VGS=-4.5V, ID=-0.6A TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-0.6A
VSD
Diode Forward Voltage
IS=-0.5A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
A
1.7 -0.86
114 VGS=0V, VDS=-10V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-0.6A
mΩ
S -1
V
-0.4
A
140
17
pF pF
14 VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Total Gate Charge Qg Qgs
µA
-0.9
VDS=0V, VGS=±8V
Gate Threshold Voltage
Coss
Units
-0.6
Gate-Body leakage current
VGS(th)
Static Drain-Source On-Resistance
Max
V
VDS=-16V, VGS=0V
IGSS
RDS(ON)
Typ
pF
12
17
1.44
1.8
Ω nC
0.14
nC
Qgd
Gate Drain Charge
0.35
nC
tD(on)
Turn-On DelayTime
6.5
ns
6.5
ns
18.2
ns
VGS=-4.5V, VDS=-10V, RL=16.7Ω, RGEN=3Ω
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time IF=-0.6A, dI/dt=100A/µs
10
Qrr
Body Diode Reverse Recovery Charge IF=-0.6A, dI/dt=100A/µs
3
Body Diode Reverse Recovery Time
5.5
ns 13
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any agiven givenapplication applicationdepends dependson onthe theuser's user'sspecific specificboard boarddesign. design.The Thecurrent currentrating ratingisisbased basedon onthe thet t ≤≤10s 10sthermal thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using <300 80 µs µs pulses, pulses, duty duty cycle cycle 0.5% 0.5% max. max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 5: April 2015
www.aosmd.com
Page 5 of 8
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4
6 -6V
-10V
25°
-4.5V
VDS=-5V
-4V
3 125°C
-3.5V -ID(A)
-ID (A)
4 -3V
2
-2.5V
2
1
VGS=-2.0V 0
0 0
1
2
3
4
5
0
0.5
900
1.5
2
2.5
3
3.5
4
4.5
1.6 VGS=-1.8V Normalized On-Resistance
VGS=-1.8V 800 RDS(ON) (mΩ)
1
-VGS(Volts) Figure 2: Transfer Characteristics
-VDS (Volts) Fig 1: On-Region Characteristics
700 VGS=-2.5V 600 500 VGS=-4.5V
400 300
ID=-0.4A 1.4 VGS=-2.5V ID=-0.5A 1.2 VGS=-4.5V ID=-0.6A 1
0.8 0
1
2
3
4
0
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
900
1.0E+00 ID=-0.6A
800
1.0E-01 1.0E-02
600
-IS (A)
RDS(ON) (mΩ)
125°C 700 125°
500
25°C 1.0E-03 1.0E-04
25° 400
1.0E-05
300 0
2
4
6
8
10
1.0E-06
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Rev 5: April 2015
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0.0
0.4
0.8
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics
Page 6 of 8
P-Channel: TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200
5 VDS=-10V ID=-0.6A Capacitance (pF)
-VGS (Volts)
4
3
2
1
0 0.0
0.5
1.0
1.5
Ciss
150
100 Coss 50
Crss
0
2.0
0
-Qg (nC) Figure 7: Gate-Charge Characteristics
10µs 100µs
10
10ms 0.1s 1s 10s
20
TJ(Max)=150° C
12
Power (W)
-ID (Amps)
1ms
0.10
15
14
TJ(Max)=150°C, TA=25°C 1.00
10
-VDS (Volts) Figure 8: Capacitance Characteristics
10.00
RDS(ON) limited
5
DC
8 6 4
0.01
2 0 0.001
0.00 0.1
1
10
100
ZθJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=415°C/W
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
10
0.01
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse 0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Rev 5: April 2015
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Page 7 of 8
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & W aveform s RL Vds Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Rev 5: April 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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Page 8 of 8
