Transcript
AO7801 Dual P-Channel Enhancement Mode Field Effect Transistor General Description
Features
The AO7801 uses advanced trench technology to provide excellent RDS(ON), low gate charge, and operation with gate voltages as low as 1.8V, in the small SOT363 footprint. It can be used for a wide variety of applications, including load switching, low current inverters and low current DC-DC converters. It is ESD protected to 2KV HBM.
VDS (V) = -20V ID = -0.6A (VGS = -4.5V) RDS(ON) < 520mΩ (VGS = -4.5V) RDS(ON) < 700mΩ (VGS = -2.5V) RDS(ON) < 950mΩ (VGS = -1.8V)
SC70-6L (SOT-363)
D2
D1
Pin1
Bottom View
Top View
S1
1
6
D1
G1
2
5
G2
D2
3
4
S2
G2
G1
S2
S1
Pin1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS VGS
Gate-Source Voltage TA=25°C
Continuous Drain A Current
TA=70°C
Pulsed Drain Current
B
TA=25°C Power Dissipation
A
TA=70°C
Junction and Storage Temperature Range Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A Maximum Junction-to-Lead C
Rev 3: April 2015
Maximum -20
Units V
±8
V
-0.6 ID
-0.48
IDM
-3
A
0.3
PD
W
0.19
TJ, TSTG
-55 to 150
Symbol t ≤ 10s Steady-State Steady-State
RθJA RθJL
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Typ 360 400 300
°C
Max 415 460 350
Units °C/W °C/W °C/W
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Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter
Symbol
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=-250µA, VGS=0V
-20 -1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±8V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-0.5
ID(ON)
On state drain current
VGS=-4.5V, VDS=-5V
-3
TJ=55°C
µA V
400
520
542
700
VGS=-2.5V, ID=-0.5A
540
700
mΩ
VGS=-1.8V, ID=-0.4A
700
950
mΩ
TJ=125°C
Forward Transconductance
VDS=-5V, ID=-0.6A
Diode Forward Voltage
IS=-0.5A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Gate Source Charge
A
1.7 -0.86
114 VGS=0V, VDS=-10V, f=1MHz
VGS=-4.5V, VDS=-10V, ID=-0.6A
mΩ
S -1
V
-0.4
A
140
17
pF pF
14 VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Total Gate Charge Qg Qgs
µA
±10
gFS
Output Capacitance
-5 -0.9
VSD
Coss
Units
-0.6
VGS=-4.5V, ID=-0.6A Static Drain-Source On-Resistance
Max
V
VDS=-16V, VGS=0V
IDSS
RDS(ON)
Typ
pF
12
17
1.44
1.8
Ω nC
0.14
nC
Qgd
Gate Drain Charge
0.35
nC
tD(on)
Turn-On DelayTime
6.5
ns
6.5
ns
18.2
ns
VGS=-4.5V, VDS=-10V, RL=16.7Ω, RGEN=3Ω
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time IF=-0.6A, dI/dt=100A/µs
10
Qrr
Body Diode Reverse Recovery Charge IF=-0.6A, dI/dt=100A/µs
3
Body Diode Reverse Recovery Time
5.5
ns 13
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The value in any a given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedence from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6,12,14 are obtained using 80 µs pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 3: April 2015
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 4
6 -6V
-10V
25°
-4.5V
VDS=-5V
-4V
3 125°C
-3.5V -ID(A)
-ID (A)
4 -3V
2
-2.5V
2
1
VGS=-2.0V 0
0 0
1
2
3
4
5
0
0.5
-VDS (Volts) Fig 1: On-Region Characteristics
1.5
2
2.5
3
3.5
4
4.5
-VGS(Volts) Figure 2: Transfer Characteristics
900
1.6 VGS=-1.8V Normalized On-Resistance
VGS=-1.8V 800 RDS(ON) (mΩ)
1
700 VGS=-2.5V 600 500 VGS=-4.5V
400 300
ID=-0.4A 1.4 VGS=-2.5V ID=-0.5A 1.2 VGS=-4.5V ID=-0.6A 1
0.8 0
1
2
3
4
0
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
1.0E+00
900 ID=-0.6A
800
1.0E-01 1.0E-02
600
-IS (A)
RDS(ON) (mΩ)
125°C 700 125°
500
25°C 1.0E-03 1.0E-04
25° 400
1.0E-05
300 0
2
4
6
8
10
1.0E-06 0.0
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Rev 3: April 2015
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0.4
0.8
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics
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TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 200
5 VDS=-10V ID=-0.6A
Ciss
150 Capacitance (pF)
-VGS (Volts)
4
3
2
100 Coss 50
1
0 0.0
0.5
1.0
1.5
Crss
0
2.0
0
-Qg (nC) Figure 7: Gate-Charge Characteristics
10µs 100µs
10
10ms 0.1s 1s 10s
20
TJ(Max)=150° C
12
Power (W)
-ID (Amps)
1ms
0.10
15
14
TJ(Max)=150°C, TA=25°C 1.00
10
-VDS (Volts) Figure 8: Capacitance Characteristics
10.00
RDS(ON) limited
5
DC
8 6 4
0.01
2 0 0.001
0.00 0.1
1
10
100
ZθJA Normalized Transient Thermal Resistance
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=415°C/W
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
-VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
10
0.01
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
Ton
T
Single Pulse 0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance
Rev 3: April 2015
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Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & W aveform s RL Vds Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
t on
tf t off
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Rev 3: April 2015
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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