Transcript
AOB440 N-Channel Enhancement Mode Field Effect Transistor General Description
Features
The AOB440 uses advanced trench technology and design to provide excellent R DS(ON) with low gate charge. This device is suitable for use in UPS, high current switching applications. Standard Product AOB440 is Pb-free (meets ROHS & Sony 259 specifications).
VDS (V) = 60V ID = 75 A (V GS = 10V) RDS(ON) < 7.5mΩ (VGS = 10V)
TO-263 D2-PAK
D Top View Drain Connected to Tab G S
G
D
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C
Continuous Drain CurrentG
Units V
±20
V
75
TC=100°C
Pulsed Drain Current
Maximum 60
ID IDM
C
A
75 150
Avalanche Current C
IAR
80
A
Repetitive avalanche energy L=0.1mH C
EAR
320
mJ
TC=25°C Power Dissipation
B
TC=100°C
Junction and Storage Temperature Range
Maximum Junction-to-Ambient
A
t≤10s
Maximum Junction-to-Ambient Maximum Junction-to-Case B
A
Steady-State Steady-State
W
75
TJ, TSTG
Thermal Characteristics Parameter
Alpha & Omega Semiconductor, Ltd.
150
PD
°C
-55 to 175
Symbol RθJA
Typ
Max
Units
8
12
°C/W
RθJA RθJC
35 0.7
45 1
°C/W °C/W
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AOB440
Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Symbol STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions ID=250uA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=250µA
ID(ON)
On state drain current
VGS=10V, VDS=5V
Static Drain-Source On-Resistance
gFS
VDS=5V, ID=30A Transconductance Diode Forward Voltage IS=1A, VGS=0V Maximum Body-Diode Continuous Current G
TJ=125°C
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs
Gate Source Charge
100
nA
4
V
6.3
7.5
10.5
13
A
90 0.7
3800 VGS=0V, VDS=30V, f=1MHz
VGS=10V, VDS=30V, ID=30A
mΩ
1
S V
55
A
4560
pF
430
pF
190 VGS=0V, VDS=0V, f=1MHz
µA
3
150
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
50 2
Units V
10
VGS=10V, ID=30A
RDS(ON)
Max
60 TJ=55°C
IGSS
VSD
Typ
VDS=60V, VGS=0V
VGS(th)
IS
Min
pF
1.5
2.3
Ω
68
88
nC
33
nC
15
nC
Qgd
Gate Drain Charge
19
nC
tD(on)
Turn-On DelayTime
18
ns
tr
Turn-On Rise Time
35
ns
tD(off)
Turn-Off DelayTime
44
ns
tf
Turn-Off Fall Time
23
ns
trr
Body Diode Reverse Recovery Time
IF=30A, dI/dt=100A/µs
53
Qrr
Body Diode Reverse Recovery Charge IF=30A, dI/dt=100A/µs
98
VGS=10V, VDS=30V, RL=1Ω, RGEN=3Ω
64
ns nC
A: The value of R θJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. Rev1: May. 2008
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOB440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
150 10V
VDS=5V
6V
125
80 5V
100
ID(A)
ID (A)
60 75 4.5V
40
125°C
50
25°C 20
25
VGS=4V
-40°C
0
0 0
1
2
3
4
5
2
2.5
VDS (Volts) Figure 1: On-Region Characteristics
3.5
4
4.5
5
5.5
VGS(Volts) Figure 2: Transfer Characteristics 2.2 Normalized On-Resistance
7.2 7 RDS(ON) (mΩ)
3
6.8
VGS=10V
6.6 6.4 6.2 6
2 1.8 1.6
VGS=10V, 30A
1.4 1.2 1 0.8 0.6
0
20
40
60
80
100
-50
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
-25
0
25
50
75
100 125 150 175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 100
25 ID=30A
10 1
15
IS (A)
RDS(ON) (mΩ)
20
125°C
125°C
0.1
10 25°C
25°C
0.01
5
0.001
-40°C
-40°C 0
0.0001 4
8
12
16
20
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
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AOB440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 6
10 VDS=30V ID=30A
5 Capacitance (nF)
VGS (Volts)
8
6
4
2
Ciss 4 3 2 Crss
1
Coss
0
0 0
20
40 60 Qg (nC) Figure 7: Gate-Charge Characteristics
0
80
15
30
45
10000
1000
TJ(Max)=175°C TC=25°C
RDS(ON) limited
ID (A)
100µs 1ms
10 TJ(Max)=175°C TC=25°C
DC
Power (W)
10µs
100
1
100 0.00001
10 100 VDS (V) Figure 9: Maximun Forward Biased Safe Operating Area (Note F)
10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=1.0°C/W
1000
10ms
1
ZθJC Normalized Transient Thermal Resistance
60
VDS (Volts) Figure 8: Capacitance Characteristics
0.001
0.1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
0.1
PD Ton
0.01 0.00001
Single Pulse 0.0001
0.001
0.01
T
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
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AOB440
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60
200
Current rating ID(A)
Power Dissipation (W)
50 150
100
50
40 30 20 10 0
0 0
25
50
75
100
125
150
175
0
25
50
75
100
125
150
175
TCASE (°C) Figure 12: Current De-rating (Note B)
TCASE (°C) Figure 13: Power De-rating (Note B)
150 ID(A), Peak Avalanche Current
TA=25°C 125 100 75
TA=150°C
50 25 0 0.000001
0.00001
0.0001
0.001
Time in avalanche, t A (s) Figure 10: Single Pulse Avalanche capability
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