Aod2810 80v N-channel Mosfet General Description Product Summary

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AOD2810 80V N-Channel MOSFET General Description Product Summary The AOD2810 uses trench MOSFET technology that is uniquely optimized to provide the most efficient high frequency switching performance. Both conduction and switching power losses are minimized due to an extremely low combination of RDS(ON), Ciss and Coss. This device is ideal for boost converters and synchronous rectifiers for consumer, telecom, industrial power supplies and LED backlighting. VDS ID (at VGS=10V) 80V 46A RDS(ON) (at VGS=10V) < 8.5mΩ RDS(ON) (at VGS=6V) < 12mΩ 100% UIS Tested 100% Rg Tested TO252 DPAK Top View D Bottom View D D S G G S S G Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current G Pulsed Drain Current C Avalanche Current C C Avalanche energy L=0.1mH TC=25°C Power Dissipation B TC=100°C Power Dissipation A TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A AD Maximum Junction-to-Ambient Maximum Junction-to-Case Rev 0: Dec. 2012 IAS 35 A EAS 61 mJ 100 Steady-State Steady-State W 50 2.5 RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s A 8.5 PDSM Junction and Storage Temperature Range A 10.5 PD TA=25°C V 160 IDSM TA=70°C ±20 36 IDM TA=25°C Continuous Drain Current Units V 46 ID TC=100°C Maximum 80 -55 to 175 Typ 16 41 1.15 www.aosmd.com °C Max 20 50 1.5 Units °C/W °C/W °C/W Page 1 of 6 AOD2810 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V IGSS Gate-Body leakage current VDS=0V, VGS=±20V VGS(th) Gate Threshold Voltage VDS=VGS，ID=250µA 2.3 ID(ON) On state drain current VGS=10V, VDS=5V 160 TJ=55°C ±100 nA 2.8 3.4 V 6.8 8.5 14.2 18 VGS=6V, ID=20A 8.7 12 mΩ 50 1 V 46 A Static Drain-Source On-Resistance TJ=125°C gFS Forward Transconductance VDS=5V, ID=20A VSD Diode Forward Voltage IS=1A,VGS=0V IS Maximum Body-Diode Continuous Current G Crss Reverse Transfer Capacitance Gate resistance VGS=0V, VDS=40V, f=1MHz Gate Source Charge Qgd tD(on) VGS=10V, VDS=40V, ID=20A 0.6 mΩ S 1871 pF 265 pF 14 VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qgs A 0.73 DYNAMIC PARAMETERS Ciss Input Capacitance Rg µA 5 VGS=10V, ID=20A Output Capacitance Units V 1 Zero Gate Voltage Drain Current Coss Max 80 VDS=80V, VGS=0V IDSS RDS(ON) Typ pF 1.3 2.0 26.5 38 Ω nC 8.5 nC Gate Drain Charge 4 nC Turn-On DelayTime 11.5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime 8.5 ns 21.5 ns tf Turn-Off Fall Time 5.5 ns trr Body Diode Reverse Recovery Time Qrr IF=20A, dI/dt=500A/µs 32 Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs 162 ns nC VGS=10V, VDS=40V, RL=2Ω, RGEN=3Ω A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev 0:Dec. 2012 www.aosmd.com Page 2 of 6 AOD2810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 10V VDS=5V 6V 80 80 8V 5V 60 ID(A) ID (A) 60 40 40 4.5V 125°C 20 20 VGS=4V 25°C 0 0 0 1 2 3 4 1 5 15 3 4 5 6 Normalized On-Resistance 2.8 12 RDS(ON) (mΩ Ω) 2 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Fig 1: On-Region Characteristics (Note E) VGS=6V 9 6 VGS=10V 3 2.6 VGS=10V ID=20A 2.4 2.2 2 1.4 17 5 2 VGS=6V10 1.2 ID=20A 1.8 1.6 1 0.8 0 0 5 0 10 15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 50 75 100 125 150 175 200 0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 25 1.0E+02 ID=20A 1.0E+01 20 40 1.0E+00 125°C 15 IS (A) RDS(ON) (mΩ Ω) 25 10 125°C 1.0E-01 1.0E-02 1.0E-03 5 25°C 25°C 1.0E-04 1.0E-05 0 0 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev 0:Dec. 2012 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 AOD2810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 2500 VDS=40V ID=20A Ciss 2000 Capacitance (pF) VGS (Volts) 8 6 4 1500 1000 Coss 2 500 0 0 Crss 0 5 10 15 20 25 30 0 10 Qg (nC) Figure 7: Gate-Charge Characteristics 30 40 50 60 70 80 VDS (Volts) Figure 8: Capacitance Characteristics 500 1000.0 10µs 10µs 100.0 RDS(ON) 100µs 10.0 1.0 DC 1ms 10ms TJ(Max)=175°C TC=25°C 0.1 0.0 0.01 0.1 1 TJ(Max)=175°C TC=25°C 400 Power (W) ID (Amps) 20 17 5 2 10 300 200 100 10 100 1000 VDS (Volts) 0 0.0001 0.001 0.01 0.1 01 10 Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) Zθ JC Normalized Transient Thermal Resistance 10 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJC=1.5°C/W 1 PD 0.1 Ton T Single Pulse 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev 0:Dec. 2012 www.aosmd.com Page 4 of 6 AOD2810 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=100°C TA=25°C 100 Power Dissipation (W) IAR (A) Peak Avalanche Current 1000 TA=150°C 10 TA=125°C 100 80 60 40 20 1 0 1 10 100 1000 0 25 50 75 100 125 150 175 TCASE (°C) Figure 13: Power De-rating (Note F) 50 10000 40 1000 TA=25°C Power (W) Current rating ID(A) Time in avalanche, tA (µ µs) Figure 12: Single Pulse Avalanche capability (Note C) 30 20 17 5 2 10 100 10 10 1 1E-05 0 0 25 50 75 100 125 150 Zθ JA Normalized Transient Thermal Resistance 1 0.1 10 1000 0 18 TCASE (°C) Figure 14: Current De-rating (Note F) 10 0.001 175 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H) D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 40 RθJA=50°C/W 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev 0:Dec. 2012 www.aosmd.com Page 5 of 6 AOD2810 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds 90% + Vdd DUT Vgs VDC - Rg 10% Vgs Vgs t d(on) tr t d(off) t on tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 E AR = 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds Isd Vgs Ig Rev 0:Dec. 2012 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6