Aod2922 100v N-channel Alphamos General Description Product Summary

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AOD2922 100V N-Channel AlphaMOS General Description Product Summary VDS • Latest Trench Power AlphaMOS (αMOS MV) technology • Very Low RDS(ON) • Low Gate Charge • Optimized for fast-switching applications • RoHS and Halogen-Free Compliant Application ID (at VGS=10V) 100V 7A RDS(ON) (at VGS=10V) < 140mΩ RDS(ON) (at VGS=4.5V) < 176mΩ 100% UIS Tested 100% Rg Tested • Synchronus Rectification in DC/DC and AC/DC Converters • Isolated DC/DC Converters in Telecom and Industrial TO-252 DPAK Top View D Bottom View D D S G G S S G Orderable Part Number Package Type Form Minimum Order Quantity AOD2922 TO-252 Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current C V A 10 3.5 IDSM TA=70°C ±20 5 IDM TA=25°C Continuous Drain Current Units V 7 ID TC=100°C C Maximum 100 A 3 IAS 3 A Avalanche energy L=0.1mH C EAS 0.5 mJ VDS Spike VSPIKE 120 V Avalanche Current Power Dissipation 10us TC=25°C B PD TC=100°C TA=25°C Power Dissipation A Junction and Storage Temperature Range Rev.1.0: October 2013 5.0 Steady-State Steady-State W 3.2 TJ, TSTG Symbol t ≤ 10s W 8.5 PDSM TA=70°C Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 17 RθJA RθJC -55 to 175 Typ 20 40 7.3 www.aosmd.com °C Max 25 50 8.8 Units °C/W °C/W °C/W Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage Conditions Min ID=250µA, VGS=0V 100 Typ Zero Gate Voltage Drain Current IGSS VGS(th) Gate-Body leakage current VDS=0V, VGS=±20V Gate Threshold Voltage VDS=VGS, ID=250µA 1 TJ=55°C 1.7 ±100 nA 2.2 2.7 V 117 140 224 270 176 RDS(ON) Static Drain-Source On-Resistance VGS=4.5V, ID=3A 140 gFS Forward Transconductance VDS=5V, ID=5A 8.5 VSD Diode Forward Voltage IS=1A,VGS=0V 0.8 IS Maximum Body-Diode Continuous Current TJ=125°C DYNAMIC PARAMETERS Input Capacitance Ciss Output Capacitance Crss Reverse Transfer Capacitance Rg Gate resistance VGS=0V, VDS=50V, f=1MHz f=1MHz µA 5 VGS=10V, ID=5A Coss Units V VDS=100V, VGS=0V IDSS Max mΩ S 1.1 V 7 A 250 310 pF 19 30 pF 2.5 8 pF Ω 10.5 16 SWITCHING PARAMETERS Total Gate Charge Qg(10V) 3.8 10 nC Qg(4.5V) Total Gate Charge 1.8 6 nC Qgs Gate Source Charge 0.8 nC Qgd Gate Drain Charge 0.8 nC tD(on) Turn-On DelayTime 5 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Turn-Off Fall Time Qrr VGS=10V, VDS=50V, ID=5A 5 mΩ VGS=10V, VDS=50V, RL=10Ω, RGEN=3Ω 3 ns 19 ns 5 ns IF=5A, dI/dt=500A/µs 16 Body Diode Reverse Recovery Charge IF=5A, dI/dt=500A/µs 52 ns nC Body Diode Reverse Recovery Time A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA t≤ 10s and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Single pulse width limited by junction temperature TJ(MAX)=175°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: October 2013 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 18 18 VDS=5V 10V 15 15 5V 12 12 9 ID(A) ID (A) 4.5V 4V 9 6 6 3.5V 125°C 3 3 25°C VGS=3V 0 0 0 1 2 3 4 1 5 2 3 4 5 6 VGS(Volts) Figure 2: Transfer Characteristics (Note E) VDS (Volts) Figure 1: On-Region Characteristics (Note E) 240 2.8 Normalized On-Resistance 2.6 RDS(ON) (mΩ Ω) 200 VGS=4.5V 160 120 VGS=10V 80 2.4 VGS=10V ID=5A 2.2 2 1.8 1.6 1.4 VGS=4.5V ID=3A 1.2 1 0.8 40 0 2 4 6 8 0 10 25 50 75 100 125 150 175 200 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature (Note E) ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 400 1.0E+02 ID=5A 350 1.0E+01 1.0E+00 125°C IS (A) RDS(ON) (mΩ Ω) 300 250 1.0E-01 200 1.0E-02 150 1.0E-03 100 125°C 25°C 1.0E-04 25°C 50 1.0E-05 2 4 6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: October 2013 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 300 VDS=50V ID=5A 250 Ciss Capacitance (pF) VGS (Volts) 8 6 4 2 200 150 Coss 100 50 Crss 0 0 0 1 2 3 4 5 0 20 Qg (nC) Figure 7: Gate-Charge Characteristics 60 80 100 VDS (Volts) Figure 8: Capacitance Characteristics 200 100.0 TJ(Max)=175°C TC=25°C 10µs 10µs RDS(ON) limited 1.0 150 Power (W) 10.0 ID (Amps) 40 100µs 1ms 10ms DC 0.1 100 50 TJ(Max)=175°C TC=25°C 0 0.0 0.01 0.1 1 10 VDS (Volts) 100 1000 0.0001 0.001 0.1 1 10 100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) VGS> or equal to 4.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 10 Zθ JC Normalized Transient Thermal Resistance 0.01 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=8.8°C/W 1 PD 0.1 Single Pulse Ton T 0.01 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: October 2013 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 10 8 Current rating ID(A) Power Dissipation (W) 15 10 5 0 6 4 2 0 0 25 50 75 100 125 150 175 0 TCASE (° °C) Figure 12: Power De-rating (Note F) 25 50 75 100 125 150 175 TCASE (° °C) Figure 13: Current De-rating (Note F) 10000 TJ(Max)=150°C TA=25°C Power (W) 1000 100 10 1 1E-05 0.001 0.1 10 1000 Zθ JA Normalized Transient Thermal Resistance Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-to-Ambient (Note H) 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PD Single Pulse 0.01 Ton T 0.001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: October 2013 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds DUT Vgs 90% + Vdd VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vgs Vds Isd Vgs Ig Rev.1.0: October 2013 L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6