Aod3t40p 400v,2a N-channel Mosfet General Description Product Summary

Transcript

AOD3T40P 400V,2A N-Channel MOSFET General Description Product Summary • Trench Power AlphaMOS-II technology • Low RDS(ON) • Low Ciss and Crss • High Current Capability • RoHS and Halogen Free Compliant VDS @ Tj,max 500V IDM 6.5A RDS(ON),max < 3.3Ω Qg,typ 3nC Eoss @ 320V 0.4µJ Applications 100% UIS Tested 100% Rg Tested • General Lighting for LED and CCFL • AC/DC Power supplies for Industrial, Consumer, and Telecom TO-252 DPAK Top View D Bottom View D D G S G G S S AOD3T40P Orderable Part Number Package Type Form Minimum Order Quantity AOD3T40P TO-252 Tape & Reel 2500 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Drain-Source Voltage Symbol VDS Gate-Source Voltage VGS TC=25°C Continuous Drain Current Pulsed Drain Current Avalanche Current C TC=100°C C Units V ±30 V 2 ID A 1.3 6.5 IDM L=1mH Maximum 400 IAR 3 A Repetitive avalanche energy C EAR 4.5 mJ Single pulsed avalanche energy H MOSFET dv/dt ruggedness Peak diode recovery dv/dt TC=25°C Power Dissipation B Derate above 25°C Junction and Storage Temperature Range Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds EAS 36 50 5 35 0.3 -55 to 150 mJ W W/°C °C 300 °C dv/dt PD TJ, TSTG TL Thermal Characteristics Parameter Maximum Junction-to-Ambient A,D Symbol RθJA Maximum Case-to-sink A RθCS Maximum Junction-to-CaseD,F RθJC Rev.1.0: August 2014 V/ns Typical Maximum Units 40 50 °C/W 3 0.5 3.6 °C/W °C/W www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter Conditions Min ID=250µA, VGS=0V, TJ=25°C 400 Typ Max Units STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage BVDSS /∆TJ Breakdown Voltage Temperature Coefficient IDSS Zero Gate Voltage Drain Current ID=250µA, VGS=0V, TJ=150°C 500 ID=250µA, VGS=0V 0.39 VDS=320V, VGS=0V 1 10 Gate-Body leakage current VDS=0V, VGS=±30V VDS=5V, ID=250µA gFS Forward Transconductance VDS=40V, ID=1A 1.3 VSD Diode Forward Voltage IS=1A,VGS=0V 0.82 RDS(ON) VGS=10V, ID=1A IS Maximum Body-Diode Continuous Current ISM Maximum Body-Diode Pulsed Current C DYNAMIC PARAMETERS Ciss Input Capacitance Coss Output Capacitance Co(er) Effective output capacitance, energy related I Crss Effective output capacitance, time related J Reverse Transfer Capacitance Rg Gate resistance Co(tr) V/ oC VDS=400V, TJ=125°C Gate Threshold Voltage Static Drain-Source On-Resistance IGSS VGS(th) V µA ±100 3 nA 4.2 5 V 2.7 3.3 Ω 1 V 2 A 6.5 A S 139 pF 9 pF 7.4 pF 14 pF VGS=0V, VDS=100V, f=1MHz 1.3 pF f=1MHz 2.2 Ω VGS=10V, VDS=320V, ID=2A 1.2 nC nC VGS=0V, VDS=100V, f=1MHz VGS=0V, VDS=0 to 320V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge 3 6 nC Qgs Gate Source Charge Qgd Gate Drain Charge 0.6 tD(on) Turn-On DelayTime 15 ns tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf trr Body Diode Reverse Recovery Time Qrr VGS=10V, VDS=200V, ID=2A, RG=25Ω 9 ns 17 ns 7 ns IF=2A,dI/dt=100A/µs,VDS=100V 135 Body Diode Reverse Recovery Charge IF=2A,dI/dt=100A/µs,VDS=100V 0.7 ns µC Turn-Off Fall Time A. The value of R qJA is measured with the device in a still air environment with T A =25°C. B. The power dissipation PD is based on TJ(MAX)=150°C in a TO252 package, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. D. The R θJA is the sum of the thermal impedance from junction to case R qJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. G.These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. H. L=60mH, IAS=1.1A, VDD=150V, RG=10Ω, Starting TJ=25°C. I. Co(er) is a fixed capacitance that gives the same stored energy as Coss while VDS is rising from 0 to 80% V(BR)DSS. J. Co(tr) is a fixed capacitance that gives the same charging time as Coss while VDS is rising from 0 to 80% V(BR)DSS. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: August 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 3.5 10V 3 VDS=40V 8V 7V 2.5 125°C ID(A) ID (A) 2 6.5V 1.5 6V 1 25°C VGS=5.5V 0.5 0 0.1 0 5 10 15 20 25 30 2 4 VDS (Volts) Figure 1: On-Region Characteristics 8 10 3 Normalized On-Resistance 8 RDS(ON) (Ω) 6 VGS(Volts) Figure 2: Transfer Characteristics 10 6 VGS=10V 4 2 2.5 0 1 2 3 4 1.5 1 0.5 0 -100 5 1E+02 1.2 1E+01 1.1 1E+00 IS (A) 1.3 0 50 100 150 200 125°C 1E-01 0.9 1E-02 0.8 1E-03 0.7 -100 -50 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 1 VGS=10V ID=1A 2 0 BVDSS (Normalized) -55°C 1 25°C 1E-04 -50 0 50 100 150 200 TJ (°C) Figure 5: Break Down vs. Junction Temperature Rev.1.0: August 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 15 100 Capacitance (pF) VGS (Volts) Ciss VDS=320V ID=2A 12 9 6 Coss 10 Crss 1 3 0 0.1 0 1 2 3 4 5 0.1 Qg (nC) Figure 7: Gate-Charge Characteristics 100 1000 10 10µs RDS(ON) limited 0.5 1 100µs ID (Amps) 0.4 Eoss(uJ) 10 VDS (Volts) Figure 8: Capacitance Characteristics 0.6 Eoss 0.3 1ms DC 0.1 0.2 10ms TJ(Max)=150°C TC=25°C 0.1 0.01 0 0 100 200 300 400 1 500 10 100 1000 VDS(Volts) Figure 10: Maximum Forward Biased Safe Operating Area (Note F) VDS (Volts) Figure 9: Coss stored Energy 50 3 2.5 40 Current rating ID(A) Power Dissipation (W) 1 30 20 10 2 1.5 1 0.5 0 0 0 25 50 75 100 125 150 25 50 75 100 125 150 TCASE (°C) Figure 12: Current De-rating (Note F) TCASE (°C) Figure 11: Power De-rating (Note B) Rev.1.0: August 2014 0 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1000 500 TJ(Max)=150°C TC=25°C TJ(Max)=150°C TA=25°C 400 600 Power (W) Power (W) 800 400 300 200 100 200 0 1E-05 0.0001 0.001 0.01 0.1 1 0 1E-05 0.0001 0.001 10 0.01 0.1 1 10 100 Pulse Width (s) Figure 14: Single Pulse Power Rating Junction-toAmbient (Note G) Pulse Width (s) Figure 13: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=3.6°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PD 0.01 Single Pulse Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 100 Pulse Width (s) Figure 15: Normalized Maximum Transient Thermal Impedance (Note F) ZθJA Normalized Transient Thermal Resistance 10 1 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.1 PD 0.01 Ton Single Pulse T 0.001 1E-05 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note G) Rev.1.0: August 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg 10V + + Vds VDC - Qgs Qgd VDC - DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds Vds Vgs 90% + Vdd DUT VDC - Rg 10% Vgs Vgs td(on) tr td(off) ton tf toff Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L 2 EAR= 1/2 LIAR Vds BVDSS Vds Id + Vdd Vgs Vgs I AR VDC - Rg Id DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: August 2014 Vgs L Isd + Vdd t rr dI/dt I RM Vdd VDC - IF Vds www.aosmd.com Page 6 of 6