Transcript
AOD403/AOI403 30V P-Channel MOSFET
General Description
Product Summary
The AOD403/AOI403 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications.
VDS ID (at VGS= -20V)
-30V -70A
RDS(ON) (at VGS= -20V)
< 6.2mΩ (< 6.7mΩ∗)
RDS(ON) (at VGS = -10V)
< 8mΩ
(< 8.5mΩ∗)
100% UIS Tested 100% Rg Tested
TO252 DPAK Top View
TO251A IPAK Bottom View
D
Bottom View
Top View
D D
S
G
G
G
S
Gate-Source Voltage
VGS TC=25°C
Pulsed Drain Current C
Avalanche Current
C
Avalanche energy L=0.1mH C TC=25°C Power Dissipation B
TC=100°C
Power Dissipation A
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
Steady-State Steady-State
A
IAS, IAR
-50
A
EAS, EAR
125
mJ
90
W
45 2.5
RθJA RθJC
W
1.6
TJ, TSTG
Symbol t ≤ 10s
A
-15
PDSM
Junction and Storage Temperature Range
V
-12
PD
TA=25°C
±25
-200
IDSM
TA=70°C
Units V
-55
IDM TA=25°C
Continuous Drain Current
Maximum -30 -70
ID
TC=100°C
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Continuous Drain Current G
D
D
S
G
-55 to 175
Typ 16 41 0.9
°C
Max 20 50 1.6
Units °C/W °C/W °C/W
* package TO251A
Rev.9.0: July 2013
www.aosmd.com
Page 1 of 6
AOD403/AOI403
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30 -1 TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-200
nA
-3.5
V
5.1
6.2
7.6
9.2
6.2
8
mΩ
VGS=-20V, ID=-20A TO251A
5.6
6.7
mΩ
VGS=-10V, ID=-20A TO251A
6.7
8.5
mΩ
42
gFS
Forward Transconductance
VDS=-5V, ID=-20A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous CurrentG
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
±100
TO252 VGS=-10V, ID=-20A TO252
Coss
Units
-2.5
VGS=-20V, ID=-20A
Static Drain-Source On-Resistance
Max
V
VDS=-30V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge VGS=-10V, VDS=-15V, ID=-20A
A
-0.7
mΩ
S -1
V
-70
A
2310
2890
3500
pF
410
585
760
pF
280
470
660
pF
1.9
3.8
5.7
Ω
40
51
61
nC
10
12
14
nC
16
22
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=-20A, dI/dt=100A/µs
14
18
22
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
9
11
13
10 VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω
16
ns
12
ns
45
ns
22
ns ns nC
1in2
A. The value of RθJA is measured with the device mounted on FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.9.0: July 2013
www.aosmd.com
Page 2 of 6
AOD403/AOI403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100 -10V
VDS=-5V -6V
80
80 -5V 60 -ID(A)
-ID (A)
60
40
125°C
40
-4.5V
25°C
20
20 VGS=-4V
0
0 0
1
2
3
4
1.5
3 3.5 4 4.5 5 5.5 -VGS(Volts) Figure 2: Transfer Characteristics (Note E)
5
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
10 Normalized On-Resistance
RDS(ON) (mΩ Ω)
2.5
6
1.8
8 VGS=-10V 6
4
VGS=-20V
2
VGS=-20V ID=-20A
1.6 1.4
17 5 2 VGS=-10V 10
1.2
ID=-20A
1 0.8
0
15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
5
10
0
25
50
75
100
125
150
175
200
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
20
1.0E+02 ID=-20A
1.0E+01
40
15
1.0E+00 125°C
125°C
-IS (A)
RDS(ON) (mΩ Ω)
2
10
5
1.0E-01 25°C 1.0E-02 1.0E-03
25°C
1.0E-04 0
1.0E-05 0
10 15 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.9.0: July 2013
5
www.aosmd.com
0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 6
AOD403/AOI403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
5000 VDS=-15V ID=-20A
8
4000 Capacitance (pF)
-VGS (Volts)
Ciss 6
4
3000
2000 Coss
2
1000
0
0 0
10
20
30 40 50 Qg (nC) Figure 7: Gate-Charge Characteristics
60
0
5
10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
30
400
1000.0 10µs
RDS(ON) limited
10.0
DC
320
10µs
1ms 10ms
1.0
240 160
TJ(Max)=175°C TC=25°C
0.1
TJ(Max)=175°C TC=25°C
100µs Power (W)
100.0 -ID (Amps)
Crss
80
0.0
0 0.01
0.1
1 10 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
100
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=1.6°C/W
40
PD
0.1 Single Pulse
Ton T
0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.9.0: July 2013
www.aosmd.com
Page 4 of 6
AOD403/AOI403
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150
TA=25°C TA=100°C 100.0 TA=150°C
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
1000.0
120 90 60 30
TA=125°C 0
10.0 1
10
100
0
1000
25
50
75
100
175
10000
80 70
TA=25°C
1000
60 Power (W)
Current rating ID(A)
150
TCASE (°C) Figure 13: Power De-rating (Note F)
Time in avalanche, tA (ms) Figure 12: Single Pulse Avalanche capability (Note C)
50 40 30
100
10
20 10
1
0
0.00001 0
10 Zθ JA Normalized Transient Thermal Resistance
125
1
25
50
75
100 125 150 TCASE (° °C) Figure 14: Current De-rating (Note F)
0.1 10 1000 0 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to18 Ambient (Note H)
175
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
0.001
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=50°C/W
40
0.1 PD
0.01 Single Pulse
Ton T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev.9.0: July 2013
www.aosmd.com
Page 5 of 6
AOD403/AOI403
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgs
Vds
Qgd
+
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton td(on)
Vgs
-
DUT
Vgs
td(off)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev.9.0: July 2013
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
www.aosmd.com
Page 6 of 6
