Transcript
AOD410 N-Channel Enhancement Mode Field Effect Transistor General Description
Features
The AOD410 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. This device is suitable for use as a load switch or in PWM applications.
VDS (V) = 30V ID = 8A (VGS = 10V) RDS(ON) < 65mΩ (VGS = 10V) RDS(ON) < 105mΩ (VGS = 4.5V)
-RoHS Compliant -Halogen Free*
100% UIS Tested! 100% Rg Tested! TO-252 D-PAK
Top View D
Bottom View D
G
G
S
G
S S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TC=25°C
Continuous Drain Current G Avalanche Current
B
C
Repetitive avalanche energy L=0.1mH TC=25°C Power Dissipation
B
Power Dissipation
A
C
TA=25°C Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
V
6
IDM
20
A
IAR
8
A
EAR
10
mJ
25 2.1
W
1.33
TJ, TSTG
-55 to 175
Symbol t ≤ 10s Steady-State Steady-State
W
12.5
PDSM
TA=70°C
Maximum Junction-to-Case C
±20
ID
PD
TC=100°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Units V
8
TC=100°C
Pulsed Drain Current
Maximum 30
RθJA RθJL
Typ 20 46 5.3
°C
Max 30 60 7
Units °C/W °C/W °C/W
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AOD410
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS
Conditions
Min
ID=250µA, VGS=0V
30
Max
Units V
VDS=24V, VGS=0V
1
IDSS
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1
On state drain current
VGS=4.5V, VDS=5V
10
ID(ON)
Typ
TJ=55°C
VGS=10V, ID=8A
5 100
nA
1.8
3
V
48
65
76
100 105
A
RDS(ON)
Static Drain-Source On-Resistance VGS=4.5V, ID=2A
75
gFS
Forward Transconductance
VDS=5V, ID=8A
6.2
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS Ciss Input Capacitance
µA
mΩ mΩ S
1
V
4.3
A
288
pF
57
pF
39
pF
3
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
6.72
nC
Qg(4.5V) Total Gate Charge
3.34
nC
0.76
nC
1.78
nC
3.7
ns
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=8A
VGS=10V, VDS=15V, RL=1.8Ω, RGEN=3Ω
3.7
ns
15.6
ns
2.6
ns
trr
Body Diode Reverse Recovery Time
IF=8A, dI/dt=100A/µs
12.6
Qrr
Body Diode Reverse Recovery Charge IF=8A, dI/dt=100A/µs
5.1
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any a given application depends on the user's specific board design, and the maximum temperature for 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev4: Oct 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20 6V 4.5V
8
4V
6
VDS=5V
ID(A)
15
ID (A)
10
5V
10V 8V
10
4
3.5V 5
125°C 25°C
2 VGS=3V 0
0 0
1
2 3 4 VDS (Volts) Fig 1: On-Region Characteristics
1.5
5
100 Normalized On-Resistance
RDS(ON) (mΩ )
3 3.5 4 VGS(Volts) Figure 2: Transfer Characteristics
1.8
VGS=4.5V
80
4.5
ID=8A
VGS=4.5V
1.6
70
VGS=10V
1.4
60
1.2
VGS=10V
50 40
1
0.8 0
2
4
6
8
10
0
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage 175
1.0E+01
150
1.0E+00 ID=8A
100
25
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
1.0E-01 125°C
IS (A)
RDS(ON) (mΩ )
2.5
2
90
125
2
1.0E-02
125°C
25°C 1.0E-03 75 25°C THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.20 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. 1.0E-04 AOS 46 DOES NOT ASSUME ANY LIABILITY ARISING 50 OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT 5.3 TO IMPROVE 7 PRODUCT DESIGN, 1.0E-05 FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 25 0.0 0.2 0.4 0.6 0.8 1.0 1.2 2 4 6 8 10 VSD (Volts) VGS (Volts) Figure 6: Body-Diode Characteristics Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
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AOD410
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 500
10 VDS=15V ID=8A
400 Capacitance (pF)
VGS (Volts)
8
6
4
2
Ciss 300
200 Coss
Crss
100
0
0 0
1
2
3
4 5 6 7 Qg (nC) Figure 7: Gate-Charge Characteristics
8
100.0
0
5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
30 TJ(Max)=150°C TA=25°C 20
Power (W)
ID (Amps)
10µs
1ms
RDS(ON) limited
10.0
100µs
10ms 0.1s
10
1s
1.0 TJ(Max)=150°C TA=25°C
10s
0 0.001
DC 0.1 0.1
Zθ JA Normalized Transient Thermal Resistance
10
1 10 VDS (Volts) Biased Safe Figure 9: Maximum Forward Operating Area (Note F)
D=Ton/T TJ,PK =TA+PDM.ZθJA.RθJA RθJA=60°C/W
100
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD 0.1 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET.20 APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS 46 DOES NOTTASSUME ANY LIABILITY ARISING on Single Pulse OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT 5.3 TO IMPROVE 7TPRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. 0.01 0.00001 0.0001 0.001 0.01
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
100
1000
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AOD410
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT
Vds -
Isd Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
Vgs
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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