Transcript
AOD4120 N-Channel Enhancement Mode Field Effect Transistor 1.4
General Description
Features
The AOD4120 uses advanced trench technology and design to provide excellent RDS(ON) with low gate charge. This device is suitable for use in PWM, load switching and general purpose applications.
VDS (V) = 20V ID = 25A (VGS = 10V) RDS(ON) <18 mΩ (VGS = 10V) RDS(ON) <25 mΩ (VGS = 4.5V) RDS(ON) <75 mΩ (VGS = 2.5V) 193 100% UIS Tested! 18 100% Rg Tested!
-RoHS Compliant -Halogen Free*
TO-252 D-PAK
Top View D
D
Bottom View
G G
S
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage TC=25°C
Continuous Drain Current
G
Pulsed Drain Current
C
C
Repetitive avalanche energy L=0.3mH
C
TC=25°C Power Dissipation B A
Junction and Storage Temperature Range
Alpha & Omega Semiconductor, Ltd.
V A
19
IAR
13
A
EAR
25
mJ
75
33 2.5
W
1.7
TJ, TSTG
-55 to 175
Symbol t ≤ 10s Steady-State Steady-State
W
16.7
PDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A B Maximum Junction-to-Case
±16
ID IDM
PD
TC=100°C TA=25°C
Power Dissipation
Units V
25
TC=100°C
Avalanche Current
Maximum 20
RθJA RθJC
Typ 17 40 3.6
°C
Max 25 50 4.5
Units °C/W °C/W °C/W
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AOD4120
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Min
Conditions ID=250uA, VGS=0V
1 TJ=55°C
5
Gate-Body leakage current
VDS=0V, VGS=±16V
VGS(th)
Gate Threshold Voltage
VDS=VGS, ID=250μA
0.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
75
VGS=10V, ID=20A TJ=125°C
Static Drain-Source On-Resistance
gFS
Forward Transconductance
VSD
Diode Forward Voltage IS=1A, VGS=0V G Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge
100
nA
2
V
14
18
A 21 20
25
VGS=2.5V, ID=2A
57
75
VDS=5V, ID=20A
19
VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=10V, ID=20A
uA
1.26
VGS=4.5V, ID=10A
DYNAMIC PARAMETERS Ciss Input Capacitance
Units V
VDS=16V, VGS=0V
RDS(ON)
Max
20
IGSS
IS
Typ
0.77
mΩ
S 1
V
30
A
900
pF
162
pF
105
pF
0.9
1.35
Ω
15
18
nC
7.2
9
nC
Qgs
Gate Source Charge
1.8
nC
Qgd
Gate Drain Charge
2.8
nC
tD(on)
Turn-On DelayTime
4.5
ns
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
VGS=10V, VDS=10V, RL=0.5Ω, RGEN=3Ω
9.2
ns
18.7
ns
tf
Turn-Off Fall Time
3.3
ns
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=100A/μs
18
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/μs
9.5
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature0of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation P D is based on T J(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature T J(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 μs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of T J(MAX)=175°C. G. The maximum current rating is limited by bond-wires. 2 H. These tests are performed with the device mounted on 1 in FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating. ST *This device is guaranteed green after data code 8X11 (Sep 1 2008). Rev4: Nov 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD4120
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30
100 10V 8V
80
25°C
VDS=5V
25
6V
125°C
-40°C
20
60 40
ID(A)
ID (A)
4.5V
3.5V
15
1.4 10
20
5 VGS=3V
0 1
2
3
4
5
1
2
3
4
193 18
1.60
80 Normalized On-Resistance
70 VGS=2.5V
60 50 40 30
VGS=4.5V
20 10 0 0
5
15VGS=10V 20
10
5
VGS(Volts) Figure 2: Transfer Characteristics
VDS (Volts) Fig 1: On-Region Characteristics
RDS(ON) (mΩ)
593 830
0
0
25
30
VGS=10V, 20A 1.40
VGS=4.5V, 10A
1.20 1.00
VGS=2.5V, 4A
0.80 0.60 -50
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
-25
0
25
50
75
59
100
125
150
175
Temperature (°C) Figure 4: On-Resistance142 vs. Junction Temperature
35
100 ID=20A
10
30
1 25
125°C
IS (A)
RDS(ON) (mΩ)
494 692
20
125°C
0.1
-40°C
0.01
15
25°C
0.001
25°C
0.0001
10 3
4
5
6
7
8
9
10
0.00001 0.0
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics
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AOD4120
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 1400
10
1200 VDS=12.5V ID=20A
Capacitance (pF)
VGS (Volts)
8 6 4
Ciss
1000 800
1.4
600 Coss
400
494 692
2 200 0
Crss
0 3
6
9 12 Qg (nC) Figure 7: Gate-Charge Characteristics
100
DC
ID (Amps)
10
15
0
5
10 15 VDS (Volts) Figure 8: Capacitance Characteristics
20
193 18
10μs
200
100μs
160
1ms
Power (W)
0
593 830
RDS(ON) limited
TJ(Max)=175°C TC=25°C
120 80
1
40 TJ(Max)=175°C, TC=25°C
0 0.0001
0.1 0.1
1
10
100
VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
ZθJC Normalized Transient Thermal Resistance
10
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=4.5°C/W
0.001
0.01
59 0.1
1
10
Pulse 142 Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
PD
0.1
0.01 0.00001
Ton Single Pulse
0.0001
0.001
0.01
0.1
T
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
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AOD4120
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS
tA =
30
40
L ⋅ ID
35
BV − V DD
Power Dissipation (W)
ID(A), Peak Avalanche Current
35
25 TA=25°C 20 15
30 25 20
1.4
15
494 692
10 5
10 0.000001
0.00001
0.0001
0
0.001
0
25
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
50
75
100
125
150
175
TCASE (°C) Figure 13: Power De-rating (Note B)
30
50
25
40
20
Power (W)
Current rating ID(A)
593 830
15
193 18
TA=25°C
30 20
10
10 5
0 0.01
0 0
25
50
75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B)
175
0.1
1
59 10 142
100
1000
Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
ZθJA Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 1
0.1
0.01 Single Pulse 0.001 0.00001
0.0001
0.001
PD
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W 0.01
0.1
Ton 1
T
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOD4120
Gate Charge Test Circuit & Waveform Vgs
Qg 10V
+
+ Vds
VDC
-
VDC
DUT
Qgs
Qgd
-
Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL
Vds Vds
DUT
Vgs Rg
90%
+ Vdd
VDC
-
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
VDC
Rg
-
I AR Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs Ig
Alpha & Omega Semiconductor, Ltd.
Vgs
L
Isd
+ Vdd
VDC
-
IF
t rr
dI/dt I RM
Vdd
Vds
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