Transcript
AOD414 N-Channel Enhancement Mode Field Effect Transistor General Description
Features
The AOD414 uses advanced trench technology to provide excellent RDS(ON), shoot-through immunity and body diode characteristics. This device is ideally suited for use as a low side switch in CPU core power conversion.
VDS (V) = 30V ID = 85A (VGS = 10V) RDS(ON) < 5.2mΩ (VGS = 10V) RDS(ON) < 7.0mΩ (VGS = 4.5V) 100% UIS Tested! 100% Rg Tested!
-RoHS Compliant -Halogen Free* TO-252 D-PAK
Top View D
Bottom View
D
G S G
G
S
S
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current B,G
VGS TC=25°C
G
TC=100°C
Avalanche Current C Repetitive avalanche energy L=0.1mH TC=25°C TC=100°C
Power Dissipation A
TA=70°C
C
V
ID
66 200
IAR
30
A
EAR
140
mJ
2.5
W
1.6 -55 to 175
Symbol
Alpha & Omega Semiconductor, Ltd.
W
50
TJ, TSTG
t ≤ 10s Steady-State Steady-State
A
100
PDSM
Junction and Storage Temperature Range
Maximum Junction-to-Case C
±20
IDM
PD
TA=25°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
Units V
85 B
Pulsed Drain Current
Power Dissipation B
Maximum 30
RθJA RθJC
Typ 14.2 40 0.56
°C
Max 20 50 1.5
Units °C/W °C/W °C/W
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AOD414
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=250µA, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.2
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
110
TJ=55°C
5
VGS=10V, ID=20A TJ=125°C VGS=4.5V, ID=20A
100
nA
2.4
V
4.2
5.2
6
7.5
5.6
7
mΩ
1
V
85
A
A
Forward Transconductance
VDS=5V, ID=20A
85
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
6060 VGS=0V, VDS=15V, f=1MHz
µA
1.8
gFS
DYNAMIC PARAMETERS Input Capacitance Ciss
Units V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
VDS=30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ
S
7000
638
pF pF
355
497
pF
0.45
0.6
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
96.4
115
nC
Qg(4.5V) Total Gate Charge
46.4
55
nC
VGS=0V, VDS=0V, f=1MHz
VGS=4.5V, VDS=15V, ID=20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time IF=20A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=100A/µs
Body Diode Reverse Recovery Time
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
0.2
13.6
nC
15.6
nC
15.7
21
ns
14.2
21
ns
55.5
75
ns
14
21
ns
31
38
24
29
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on steady-state R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature fo 175°C may be u sed if the PCB or heatsink allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. It is used to determine the current rating, when this rating falls below the package limit. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 µs pulses, duty cycle 0.5% max. F. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA TC=100°C curve provides a single pulse rating. T C by the package current capability. G. The maximum current rating is limited A=25° *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev 8 : Sep 2008 THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Alpha & Omega Semiconductor, Ltd.
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AOD414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60
60 10V
50
50
VDS=5V
4.5V 40
3.5V
125°C 30
ID(A)
ID(A)
40
30
VGS=3V
20
20
10
10
0
0 0
1
2 3 4 VDS (Volts) Figure 1: On-Region Characteristics
5
7.0
1
1.5
2
2.5 3 3.5 VGS(Volts) Figure 2: Transfer Characteristics
1.8 Normalized On-Resistance
6.5
5.5
ID=20A
1.4
5.0
VGS=4.5V VGS=10V
1.2
VGS=10V
4.5
4
497
1.6
VGS=4.5V
6.0 RDS(ON) (mΩ )
25°C
4.0 3.5 3.0
1
0.8 0
20
40
60
80
100
0
25
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
12
1.0E+02 1.0E+01
10 1.0E+00
8
125°C
IS (A)
RDS(ON) (mΩ )
ID=20A
TC=100°C
1.0E-02
TA=25°C
6
125°C
1.0E-01
25°C
25°C
1.0E-03
-55 to 175
4
1.0E-04 2
1.0E-05 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
0.0
0.2
0.4
0.6 0.8 1.0 VSD (Volts) Figure 6: Body-Diode Characteristics
1.2
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AOD414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 8000
10 VDS=15V ID=20A Capacitance (pF)
VGS (Volts)
8
Ciss
7000
6 4 2
6000 5000 4000 3000 Coss 2000
Crss
1000 0
0 0
20
40
60
80
100
0
Qg (nC) Figure 7: Gate-Charge Characteristics
1000
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
100µs
10ms
10
Power (W)
1ms
0.1s 1s 10s TJ(Max)=150°C TA=25°C
1
1
60
40
20
DC
0.1 0.1
TJ(Max)=150°C TA=25°C
80
100
30
497
100 RDS(ON) limited
ID (Amps)
5
10
100
VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0 0.001
0.01
0.1 1 10 100 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Zθ JA Normalized Transient Thermal Resistance
10
1
0.1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
TC=100°C TA=25°C PD
-55 to 175
0.01 Single Pulse
Ton T
0.001 0.00001
0.0001
0.001
0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
0.01
100
1000
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AOD414
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 120 TA=25°C
100
80 60
tA =
40
Power Dissipation (W)
ID(A), Peak Avalanche Current
100
L ⋅ ID BV − VDD
20 0 0.00001
80 60 40 20 0
0.0001
0.001
0.01
Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability
0
25
50
75
100
125
150
175
TCASE (°C) Figure 13: Power De-rating (Note B)
100
497
Current rating ID(A)
80
60
40
20
0 0
25
50
75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note B)
Alpha & Omega Semiconductor, Ltd.
175
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AOD414
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds -
Isd Vgs
Ig
Alpha & Omega Semiconductor, Ltd.
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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