Transcript
AOD4156 30V N-Channel MOSFET SDMOS TM General Description
Product Summary VDS
The AOD4156 is fabricated with SDMOSTM trench technology that combines excellent RDS(ON) with low gate charge.The result is outstanding efficiency with controlled switching behavior. This universal technology is well suited for PWM, load switching and general purpose applications.
ID (at VGS=10V)
30V 55A
RDS(ON) (at VGS=10V)
< 5.6mΩ
RDS(ON) (at VGS = 4.5V)
< 9.5mΩ
100% UIS Tested 100% Rg Tested
TO252 DPAK
D
TopView
Bottom View
D D
G
S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TC=25°C
Continuous Drain Current G Pulsed Drain Current
C
V A
190 15
IDSM
TA=70°C
±20 43
IDM TA=25°C
Continuous Drain Current
Units V
55
ID
TC=100°C
Maximum 30
A
12
Avalanche Current C
IAS, IAR
50
A
Avalanche energy L=0.05mH C TC=25°C
EAS, EAR
63
mJ
Power Dissipation
B
TC=100°C TA=25°C
Power Dissipation A
Junction and Storage Temperature Range
Rev 0: April 2010
2.5
Steady-State Steady-State
RθJA RθJC
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W
1.6
TJ, TSTG
Symbol t ≤ 10s
W
31
PDSM
TA=70°C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case
62
PD
-55 to 175
Typ 15 41 2
°C
Max 20 50 2.4
Units °C/W °C/W °C/W
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AOD4156
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
Min
Conditions
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
ID=250µA, VGS=0V
Typ
V
VDS=30V, VGS=0V
100
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.6
ID(ON)
On state drain current
VGS=10V, VDS=5V
190
TJ=55°C
500
VGS=10V, ID=20A
nA
2.1
3
V
4.7
5.6
7.4
8.9 9.5
A
Static Drain-Source On-Resistance VGS=4.5V, ID=10A
7.9
gFS
Forward Transconductance
VDS=5V, ID=20A
50
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.7
IS
Maximum Body-Diode Continuous Current
TJ=125°C
DYNAMIC PARAMETERS Input Capacitance Ciss Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=20A
µA
100
RDS(ON)
Output Capacitance
Units
30
IDSS
Coss
Max
mΩ mΩ S
1
V
55
A
1630
2037
2440
pF
260
375
490
pF
130
220
300
pF
0.5
1.1
1.7
Ω
28
35
42
nC nC
13
16
20
6.8
8.6
10
nC
2.8
4.6
6.4
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
8
10
12
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
12
15
18
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
8.8
ns
26
ns
23
ns
6
ns ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: April 2010
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AOD4156
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
100 5V
10V
VDS=5V
80
80
4.5V 6V
60
7V ID(A)
ID (A)
60
4V
40
40
20
20
125°C
VGS=3.5V 0
0 0
1
2
3
4
0
5
VDS (Volts) Fig 1: On-Region Characteristics (Note E) 15 Normalized On-Resistance
RDS(ON) (mΩ Ω)
1
2
3 4 5 VGS(Volts) Figure 2: Transfer Characteristics (Note E)
6
2
12 VGS=4.5V
9 6
VGS=10V
3
1.8
VGS=10V ID=20A
1.6
17 5 2 10 VGS=4.5V
1.4 1.2
ID=20A
1 0.8
0 0
5
0
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
200
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 1.0E+02
20 ID=20A
1.0E+01
16
40
1.0E+00 12
IS (A)
RDS(ON) (mΩ Ω)
25°C
125°C 8
125°C
1.0E-01 25°C
1.0E-02 1.0E-03
4
25°C
1.0E-04 1.0E-05
0 2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: April 2010
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOD4156
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
3000 VDS=15V ID=20A
2500 Ciss Capacitance (pF)
VGS (Volts)
8
6
4
2
2000 1500 1000 500
0
Crss
0 0
5
10
15 20 25 30 35 Qg (nC) Figure 7: Gate-Charge Characteristics
40
0
10µs
RDS(ON) limited
10µs
10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics
25
100µs
10.0
1ms 10ms
DC 1.0
TJ(Max)=175°C
0.1
TJ(Max)=175°C TC=25°C
160 Power (W)
100.0
17 5 2 10
120 80 40
0.0
0 0.01
0.1
1 VDS (Volts)
10
100
0.0001
10
0.001
0.01
0.1
1
0
10
Pulse Width (s) 18Junction-toFigure 10: Single Pulse Power Rating Case (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JC Normalized Transient Thermal Resistance
5
200
1000.0
ID (Amps)
Coss
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
40
RθJC=2.4°C/W 1
PD
0.1
Ton
T
Single Pulse 0.01 0.00001
0.0001
0.001
0.01
0.1
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: April 2010
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AOD4156
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100
80 TA=100°C
TA=150°C TA=125°C
Power Dissipation (W)
IAR (A) Peak Avalanche Current
TA=25°C
40
20
0
10 0.000001
0
0.00001 0.0001 0.001 Time in avalanche, tA (s) Figure 12: Single Pulse Avalanche capability (Note C)
25
50
75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F)
60
100000
50
10000
TA=25°C
1000
17 5 2 10
40
Power (W)
Current rating ID(A)
60
30
100
20
175
10 10
1 0
0.00001 0
Zθ JA Normalized Transient Thermal Resistance
10
1
25
50
75
100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F)
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
0.001
0.1
10
1000
0 Pulse Width (s) 18
175
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1 PD
0.01 Single Pulse
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: April 2010
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AOD4156
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30
12 di/dt=800A/µs
25
16
3
14
10
di/dt=800A/µs
2.5
12
6
25ºC
10
trr (ns)
Irm 2
25ºC
0
125ºC
10
15
20
25
0
0
30
0
10
5
10
15
20
25
30
IS (A) Figure 18: Diode Reverse Recovery Time and Softness Factor vs. Conduction Current 15
2.5 Is=20A
Is=20A 8
125ºC
15
12
2
25ºC
6
10 Qrr
4 125ºC
trr (ns)
trr Irm (A)
Qrr (nC)
0.5
25ºC
IS (A) Figure 17: Diode Reverse Recovery Charge and Peak Current vs. Conduction Current 20
1
S
2
0 5
1.5
25ºC
4
5
0
8 6
4
125ºC
trr
125ºC
9
1.5 25ºC
6
S
15
2
125ºC
10
S
8
125ºC Qrr
Irm (A)
Qrr (nC)
20
1
125º S
5 25ºC
Irm 0 0
200
400
600
800
2
3
0
0
1000
di/dt (A/µ µs) Figure 19: Diode Reverse Recovery Charge and Peak Current vs. di/dt
Rev 0: April 2010
25ºC
0.5 0
400 600 800 1000 di/dt (A/µ µs) Figure 20: Diode Reverse Recovery Time and Softness Factor vs. di/dt
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0
200
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AOD4156
Gate Charge Test Circuit & W aveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & W aveforms RL Vds Vds
Vgs
90%
+ Vdd
DUT
VDC
-
Rg
10%
Vgs
Vgs
t d(on)
tr
t d(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & W aveforms L
2
E AR = 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev 0: April 2010
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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