Transcript
AOD418/AOI418 30V N-Channel MOSFET
General Description
Product Summary
The AOD418/AOI418 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications.
VDS
30V 36A
ID (at VGS= 10V) RDS(ON) (at VGS= 10V)
< 7.5mΩ
RDS(ON) (at VGS = 4.5V)
< 11mΩ
100% UIS Tested 100% Rg Tested
TO252 DPAK
TO251A IPAK
Top View
Bottom View
D
Bottom View
Top View
D D
S
G
G S
G
G
D
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage VGS Gate-Source Voltage Continuous Drain Current G
TC=25°C
Pulsed Drain Current
C
S
Units V V A
28 125 13.5
IDSM
TA=70°C
D
G
36
IDM TA=25°C
Continuous Drain Current
S
Maximum 30 ±20
ID
TC=100°C
S
A
10.5
Avalanche Current C
IAS, IAR
27
A
Avalanche energy L=0.1mH C
EAS, EAR
36
mJ
TC=25°C Power Dissipation B
TC=100°C TA=25°C
Power Dissipation
A
Junction and Storage Temperature Range
Rev 0: February 2011
2.5
Steady-State Steady-State
RθJA RθJC
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W
1.6
TJ, TSTG
Symbol t ≤ 10s
W
25
PDSM
TA=70°C
Thermal Characteristics Parameter A Maximum Junction-to-Ambient AD Maximum Junction-to-Ambient Maximum Junction-to-Case
50
PD
-55 to 175
Typ 16 41 2.5
°C
Max 20 50 3
Units °C/W °C/W °C/W
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AOD418/AOI418
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Min
Conditions ID=250µA, VGS=0V VDS=30V, VGS=0V
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±20V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
125
TJ=55°C
5 ±100
VGS=10V, ID=20A
7.5
8.5
11
mΩ
VGS=10V, ID=20A TO251A
6.7
8
mΩ
VGS=4.5V, ID=20A TO251A
9
11.5
mΩ
IS=1A,VGS=0V Diode Forward Voltage Maximum Body-Diode Continuous CurrentG
TJ=125°C
VDS=5V, ID=20A
DYNAMIC PARAMETERS Ciss Input Capacitance Crss
Reverse Transfer Capacitance
Rg
Gate resistance
SWITCHING PARAMETERS Qg(10V) Total Gate Charge Qg(4.5V) Total Gate Charge
V A
11.5
Forward Transconductance
Output Capacitance
nA
2.5
9.5
VSD
Coss
1.95
µA
6.2
TO252 VGS=4.5V, ID=20A TO252
gFS IS
Units V
1
Zero Gate Voltage Drain Current
Static Drain-Source On-Resistance
Max
30
IDSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz VGS=0V, VDS=0V, f=1MHz
VGS=10V, VDS=15V, ID=20A
mΩ
63 0.72
S 1
V
36
A
920
1150
1380
pF
125
180
235
pF
60
105
150
pF
0.55
1.1
1.65
Ω
16
20
24
nC
7.6
9.5
11
Qgs
Gate Source Charge
2.7
nC
Qgd
Gate Drain Charge
5
nC
tD(on)
Turn-On DelayTime
6.5
ns
tr
Turn-On Rise Time
2
ns
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=20A, dI/dt=500A/µs
7
8.7
10.5
Qrr
Body Diode Reverse Recovery Charge IF=20A, dI/dt=500A/µs
11
13.5
16
VGS=10V, VDS=15V, RL=0.75Ω, RGEN=3Ω
17
ns
3.5
ns ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 0: February 2011
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AOD418/AOI418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 140
100 10V
120
80
100
4.5V 60
80
ID(A)
ID (A)
VDS=5V
5V
7V
4V
60 40
40 125°C
3.5V 20
20 VGS=3V
0 0
1
2
3
4
25°C
0 1
5
12
2
2.5
3
3.5
4
4.5
5
5.5
Normalized On-Resistance
2
10 RDS(ON) (mΩ)
1.5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
VGS=4.5V
8 6 VGS=10V
4 2
VGS=10V ID=20A
1.8 1.6
17 5 2 VGS=4.5V 10
1.4 1.2
ID=20A
1 0.8
0
5
10
15 20 25 30 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
0
25
50
75
100
125
150
175
200
Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18 Temperature (Note E)
25
1.0E+02 ID=20A 1.0E+01
20
40
15
125°C
IS (A)
RDS(ON) (mΩ)
1.0E+00
10 25°C
125°C
1.0E-01
25°C 1.0E-02 1.0E-03
5
1.0E-04
0
1.0E-05 0
2
4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 0: February 2011
10
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AOD418/AOI418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
1600
VDS=15V ID=20A
1400
Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
1200 1000 800 600 400
2
Coss
200 0 0
5
10 15 Qg (nC) Figure 7: Gate-Charge Characteristics
0
20
10
15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
RDS(ON) limited
10µs 100µs 1ms 10ms
DC
1.0 TJ(Max)=175°C TC=25°C
0.1 0.0 0.01
0.1
TJ(Max)=175°C TC=25°C
160
Power (W)
10µs
100.0 10.0
5
200
1000.0
-ID (Amps)
Crss
0
17 5 2 10
120 80 40
1 -VDS (Volts)
10
100
0 0.0001
0.001
0.01
0.1
1
0
10
Pulse Width (s) 18 Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
ZθJC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJC=3°C/W
40
PD
0.1 Single Pulse 0.01 0.00001
0.0001
0.001
Ton
0.01
0.1
T
1
10
100
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 0: February 2011
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AOD418/AOI418
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60
100
TA=150°C
Power Dissipation (W)
-IAR (A) Peak Avalanche Current
TA=25°C
TA=100°C
50 40 30 20 10
TA=125°C
10 1
0 0
10 100 1000 Time in avalanche, tA (µs) Figure 12: Single Pulse Avalanche capability (Note C)
50
75 100 125 150 TCASE (°C) Figure 13: Power De-rating (Note F)
175
100
50
TA=25°C
80 Power (W)
40
Current rating ID(A)
25
30 20
60
17 5 2 10
40 20
10
0 0.00001
0 0
ZθJA Normalized Transient Thermal Resistance
10
1
25
50
75 100 125 150 TCASE (°C) Figure 14: Current De-rating (Note F)
0.001
0.1
10
1000
0 Pulse Width (s) 18
175
Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
40
RθJA=50°C/W
0.1 PD
0.01
Single Pulse Ton
0.001 0.00001
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Rev 0: February 2011
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AOD418/AOI418
Gate Charge Test Circuit & Waveform Vgs
Qg
-10V
-
+
VDC
-
Qgs
Vds
Qgd
+
VDC
DUT
Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton td(on)
Vgs VDC
-
DUT
Vgs
Rg
td(off)
tr
tf
90%
Vdd
+
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
E AR= 1/2 LIAR
Vds Vds
Id VDC
-
Vgs
Vgs
+
Rg
BVDSS Vdd
Id
I AR
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds +
DUT
Vds -
Isd
Vgs Ig
Rev 0: February 2011
Vgs
L
-Isd
+ Vdd
VDC
-
-I F
t rr
dI/dt -I RM
Vdd
-Vds
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