Aod423/aoi423/aoy423 30v P-channel Mosfet General Description Product Summary

Transcript

AOD423/AOI423/AOY423 30V P-Channel MOSFET General Description Product Summary The AOD423/AOI423/AOY423 uses advanced trench technology to provide excellent RDS(ON), low gate charge and low gate resistance. With the excellent thermal resistance of the DPAK/IPAK package, this device is well suited for high current load applications. VDS ID (at VGS= -20V) -30V -70A RDS(ON) (at VGS= -20V) < 6.2mΩ (< 6.7mΩ∗) RDS(ON) (at VGS = -10V) < 8mΩ (< 8.5mΩ∗) 100% UIS Tested 100% Rg Tested TO252 DPAK TO-251A IPAK TO251B (IPAK short lead) Top View Bottom View D D D D Bottom View Top View D S G G G S S D D S G S G Orderable Part Number Package Type Form Minimum Order Quantity AOD423 AOI423 AOY423 TO-252 TO-251A TO-251B Tape & Reel Tube Tube 2500 4000 4000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G VGS TC=25°C Pulsed Drain Current C Continuous Drain Current TA=25°C ±25 V -67 IDM A -200 -15 IDSM TA=70°C Units V -70 ID TC=100°C Maximum -30 A -12 Avalanche Current C IAS, IAR -50 A Avalanche energy L=0.1mH C TC=25°C EAS, EAR 125 mJ Power Dissipation B TC=100°C Power Dissipation A TA=70°C TA=25°C 2.5 Steady-State Steady-State RθJA RθJC W 1.6 TJ, TSTG Symbol t ≤ 10s W 45 PDSM Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Case 90 PD -55 to 175 Typ 16 41 0.9 °C Max 20 50 1.6 Units °C/W °C/W °C/W * package TO251A, TO251B Rev.1.0: August 2014 www.aosmd.com Page 1 of 6 Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol Parameter STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS Conditions Min ID=-250µA, VGS=0V -30 -1 Zero Gate Voltage Drain Current IGSS Gate-Body leakage current VDS=0V, VGS= ±25V VGS(th) Gate Threshold Voltage VDS=VGS ID=-250µA -1.5 ID(ON) On state drain current VGS=-10V, VDS=-5V -200 TJ=55°C -5 nA -3.5 V 5.1 6.2 7.6 9.2 6.2 8 mΩ VGS=-20V, ID=-20A TO251A, TO251B 5.6 6.7 mΩ VGS=-10V, ID=-20A TO251A, TO251B 6.7 8.5 mΩ TO252 VGS=-10V, ID=-20A TO252 Forward Transconductance VDS=-5V, ID=-20A VSD Diode Forward Voltage IS=-1A,VGS=0V IS Maximum Body-Diode Continuous CurrentG TJ=125°C Crss Reverse Transfer Capacitance 42 Rg Gate resistance VGS=0V, VDS=-15V, f=1MHz VGS=0V, VDS=0V, f=1MHz SWITCHING PARAMETERS Qg Total Gate Charge VGS=-10V, VDS=-15V, ID=-20A A -0.7 DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance µA ±100 gFS Coss Units -2.5 VGS=-20V, ID=-20A Static Drain-Source On-Resistance Max V VDS=-30V, VGS=0V IDSS RDS(ON) Typ 1.5 mΩ S -1 V -70 A 2760 pF 550 pF 375 pF 3 6.0 Ω 45 65 nC Qgs Gate Source Charge 10 nC Qgd Gate Drain Charge 12 nC tD(on) Turn-On DelayTime 13 ns 23 ns 35 ns 26 ns ns nC tr Turn-On Rise Time tD(off) Turn-Off DelayTime tf Turn-Off Fall Time VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω trr Body Diode Reverse Recovery Time IF=-20A, dI/dt=500A/µs 15 Qrr Body Diode Reverse Recovery Charge IF=-20A, dI/dt=500A/µs 30 A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedence from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: August 2014 www.aosmd.com Page 2 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 100 100 -10V VDS=-5V -6V 80 80 -5V 60 -ID(A) -ID (A) 60 40 125°C 40 -4.5V 25°C 20 20 VGS=-4V 0 0 0 1 2 3 4 1.5 5 10 Normalized On-Resistance RDS(ON) (mΩ) 2.5 3 3.5 4 4.5 5 5.5 6 1.8 8 VGS=-10V 6 4 VGS=-20V 2 VGS=-20V ID=-20A 1.6 1.4 17 5 2 VGS=-10V 10 1.2 ID=-20A 1 0.8 0 15 20 25 30 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E) 5 10 0 25 50 75 100 125 150 175 200 Temperature (°C) 0 Figure 4: On-Resistance vs. Junction 18Temperature (Note E) 20 1.0E+02 ID=-20A 1.0E+01 40 15 1.0E+00 125°C 125°C -IS (A) RDS(ON) (mΩ) 2 -VGS(Volts) Figure 2: Transfer Characteristics (Note E) -VDS (Volts) Fig 1: On-Region Characteristics (Note E) 10 25°C 1.0E-02 1.0E-03 25°C 5 1.0E-01 1.0E-04 0 1.0E-05 0 5 10 15 20 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E) Rev.1.0: August 2014 www.aosmd.com 0.0 0.2 0.4 0.6 0.8 1.0 1.2 -VSD (Volts) Figure 6: Body-Diode Characteristics (Note E) Page 3 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10 5000 VDS=-15V ID=-20A 4000 Capacitance (pF) -VGS (Volts) 8 6 4 2 Ciss 3000 2000 Coss 1000 0 Crss 0 0 10 20 30 40 0 50 10µs RDS(ON) limited 20 25 30 10.0 DC 320 10µs 1ms 10ms 1.0 TJ(Max)=175°C TC=25°C 0.0 0.01 TJ(Max)=175°C TC=25°C 100µs Power (W) -ID (Amps) 15 400 1000.0 0.1 10 -VDS (Volts) Figure 8: Capacitance Characteristics Qg (nC) Figure 7: Gate-Charge Characteristics 100.0 5 0.1 240 160 80 1 10 0 0.0001 100 -VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F) 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F) ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJC=1.6°C/W 40 PD 0.1 Single Pulse Ton T 0.01 0.00001 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F) Rev.1.0: August 2014 www.aosmd.com Page 4 of 6 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 TA=25°C TA=100°C 100.0 TA=150°C Power Dissipation (W) -IAR (A) Peak Avalanche Current 1000.0 120 90 60 30 TA=125°C 0 10.0 1 10 100 0 1000 25 50 75 100 175 10000 80 70 TA=25°C 1000 60 Power (W) Current rating ID(A) 150 TCASE (°C) Figure 13: Power De-rating (Note F) Time in avalanche, tA (ms) Figure 12: Single Pulse Avalanche capability (Note C) 50 40 30 100 10 20 10 1 0.00001 0 0 25 50 75 100 125 150 10 1 0.001 0.1 10 1000 0 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-to18 Ambient (Note H) 175 TCASE (°C) Figure 14: Current De-rating (Note F) ZθJA Normalized Transient Thermal Resistance 125 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse RθJA=50°C/W 40 0.1 PD 0.01 Single Pulse Ton T 0.001 0.00001 0.0001 0.001 0.01 0.1 1 10 100 1000 Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H) Rev.1.0: August 2014 www.aosmd.com Page 5 of 6 Gate Charge Test Circuit & Waveform Vgs Qg -10V - - VDC + VDC Qgs Vds Qgd + DUT Vgs Ig Charge Resistive Switching Test Circuit & Waveforms RL Vds toff ton td(on) Vgs - DUT Vgs td(off) tr tf 90% Vdd VDC + Rg Vgs 10% Vds Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2 L E AR= 1/2 LIAR Vds Vds Id - Vgs Vgs VDC + Rg BVDSS Vdd Id I AR DUT Vgs Vgs Diode Recovery Test Circuit & Waveforms Q rr = - Idt Vds + DUT Vds - Isd Vgs Ig Rev.1.0: August 2014 Vgs L -Isd + Vdd t rr dI/dt -I RM Vdd VDC - -I F -Vds www.aosmd.com Page 6 of 6