Transcript
AOD425 P-Channel Enhancement Mode Field Effect Transistor General Description
Features
The AOD425 uses advanced trench technology to provide excellent RDS(ON) and ultra-low low gate charge with a 25V gate rating. This device is suitable for use as a load switch or in PWM applications. The device is ESD protected.
VDS (V) = -30V ID = -50A (VGS = -10V) RDS(ON) < 17mΩ (VGS = -10V) RDS(ON) < 35mΩ (VGS = -5V)
-RoHS Compliant -Halogen Free*
ESD Protected! 100% Rg Tested!
TO252 DPAK Top View
D Bottom View
D D G S
G
S
S
G
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage
VGS TC=25°C
Continuous Drain Current F C
Continuous Drain TA=25°C TA=70°C Current B
Junction and Storage Temperature Range
Maximum Junction-to-Case B
Alpha & Omega Semiconductor, Ltd.
IDM
-70
A
-7 71
W
36 2.5
W
1.6
TJ, TSTG
-55 to 175
Symbol t ≤ 10s Steady-State Steady-State
A
-9
PDSM
TA=70°C
Thermal Characteristics Parameter A Maximum Junction-to-Ambient Maximum Junction-to-Ambient A
V
-36
PD
TC=100°C TA=25°C
Power Dissipation A
±25
ID
IDSM
TC=25°C Power Dissipation
Units V
-50
TC=100°C
Pulsed Drain Current
Maximum -30
RθJA RθJC
Typ 16 41 1.7
°C
Max 20 50 2.1
Units °C/W °C/W °C/W
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AOD425
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage
Conditions
Min
ID=-250uA, VGS=0V
-30 -1
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS= ±25V
VGS(th)
Gate Threshold Voltage
VDS=VGS ID=-250µA
-1.5
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-70
TJ=55°C
VGS=-10V, ID=-20A Static Drain-Source On-Resistance
TJ=125°C VGS=-5V, ID=-20A
gFS
Forward Transconductance
VDS=-5V, ID=-20A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Max
-5
VGS=0V, VDS=0V, f=1MHz
µA
±10
uA
-2.45
-3.5
V
13.5
17
18.5
24
27
35
A
27 -0.72
1760 VGS=0V, VDS=-15V, f=1MHz
Units V
VDS=-30V, VGS=0V
IDSS
RDS(ON)
Typ
mΩ S
-1
V
-50
A
2200
pF
360
pF
255
pF Ω
6.4
8
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
30
38
Qg(4.5V) Total Gate Charge
11
nC
7
nC
8
nC
11.5
ns
8
ns
35
ns
18.5
ns
VGS=-10V, VDS=-15V, ID=-20A
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf trr
Turn-Off Fall Time Body Diode Reverse Recovery Time
IF=-20A, dI/dt=100A/µs
24
Qrr
Body Diode Reverse Recovery Charge IF=-20A, dI/dt=100A/µs
16
VGS=-10V, VDS=-15V, RL=0.75Ω, RGEN=3Ω
30
nC
ns nC
A. The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A =25°C. The Power dissipation PDSM is based on R θJA and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design, and the maximum temperature of 175°C may be used if the PCB allows it. B. The power dissipation PD is based on TJ(MAX)=175°C, using junction-to-case thermal resistance, and is more useful in setting the upper dissipation limit for cases where additional heatsinking is used. C: Repetitive rating, pulse width limited by junction temperature TJ(MAX)=175°C. D. The R θJA is the sum of the thermal impedence from junction to case R θJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300 us pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedence which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=175°C. The SOA curve provides a single pulse rating. G. The maximum current rating is limited by bond-wires. H. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. *This device is guaranteed green after data code 8X11 (Sep 1ST 2008). Rev3: May. 2010
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE
Alpha & Omega Semiconductor, Ltd.
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AOD425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 70
25
60
-10V
VDS=-5V
20
125°C
15
40 ID(A)
ID(A)
50
-5V
30 20
10 -4.5V 25°C
5 10
VGS=-4V
0
0 0
1
2 3 4 VDS (Volts) Figure 1: On-Region Characteristics
5
2
40.0
3.5 4 4.5 VGS(Volts) Figure 2: Transfer Characteristics
5
ID=-20A
Normalized On-Resistance
RDS(ON) (mΩ Ω)
3
1.8
30.0 VGS=-5V 20.0
10.0 VGS=-10V
1.6 VGS=-10V 1.4
1.2
VGS=-5V
1
0.0
0.8 0
5
10
15
20
25
0
ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
50
100
150
200
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
50
1.0E+02 ID=-20A
1.0E+01
40
125°C 1.0E+00
125°C 30
IS (A)
RDS(ON) (mΩ Ω)
2.5
TC=100°C 20
TA=25°C
1.0E-01
25°C
1.0E-02 1.0E-03
-55 to 175
10 25°C
1.0E-04
0 0
5
10
15
20
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Alpha & Omega Semiconductor, Ltd.
1.0E-05 0.0
0.2
0.4 0.6 0.8 VSD (Volts) Figure 6: Body-Diode Characteristics
1.0
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AOD425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 2500
10 VDS=-15V ID=-20A
Ciss
2000 Capacitance (pF)
VGS (Volts)
8
6
4
1500
1000 Coss
2
500
0
0
Crss 0
5
10
15 20 25 30 Qg (nC) Figure 7: Gate-Charge Characteristics
35
0
1000
10 15 20 VDS (Volts) Figure 8: Capacitance Characteristics
25
400
100
TJ(Max)=175°C TC=25°C
320 10µs
RDS(ON) limited
10
100µs DC
1ms
1
10ms TJ(Max)=175°C TC=25°C
0.1
Power (W)
ID (Amps)
5
240
160
80
0.01
0 0.01
0.1
1 10 VDS (Volts) Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
100
0.0001
0.001
0.01 0.1 1 10 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toCase (Note F)
Zθ JC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC RθJC=2.1°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
1
TC=100°C TA=25°C PD
0.1
-55 to 175 Ton T Single Pulse
0.01 0.00001
0.0001
0.01 0.1 Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Alpha & Omega Semiconductor, Ltd.
0.001
1
10
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AOD425
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 60 50
80 Current rating ID(A)
Power Dissipation (W)
100
60 40 20
40 30 20 10
0
0 0
25
50
75
100
125
150
175
0
TCASE (°°C) Figure 13: Power De-rating (Note B)
25
50
75
100
125
150
175
TCASE (°°C) Figure 14: Current De-rating (Note B)
10000
Power (W)
1000
100
10
1 0.00001
0.001
0.1 10 1000 Pulse Width (s) Figure 15: Single Pulse Power Rating Junction-toAmbient (Note H)
Zθ JA Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=50°C/W
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
0.1 PD
0.01
Single Pulse Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 16: Normalized Maximum Transient Thermal Impedance (Note H)
Alpha & Omega Semiconductor, Ltd.
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AOD425
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
Qgd
+
+ DUT
Qgs
Vds
VDC
Vgs Ig Charge
Resistive Switching Test Circuit & W aveform s RL Vds
t off
t on td(on) d(on )
Vgs
-
D UT
Vgs
t dd(off) (o ff)
tr
90%
Vdd
VDC
tf
+
Rg
Vgs
10% Vds
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd
L
Vgs Ig
Alpha & Omega Semiconductor, Ltd.
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
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