Aoks40b65h1/aots40b65h1 650v, 40a Alpha Igbt General Description Product Summary

Transcript

AOKS40B65H1/AOTS40B65H1 650V, 40A Alpha IGBT TM General Description Product Summary • Latest AlphaIGBT (α IGBT) technology • 650V breakdown voltage • High efficient turn-on di/dt controllability • Very high switching speed • Low turn-off switching loss and softness • Very good EMI behavior • Short-circuit ruggedness VCE IC (TC=100°C) 650V 40A VCE(sat) (TJ=25°C) 1.9V Applications • Power factor correction • UPS & Solar Inverters • Very High Switching Frequency Applications • Welding Machines TO-247 AOKS40B65H1 Orderable Part Number C TO-220 G C G E C E G E AOTS40B65H1 Package Type Form Minimum Order Quantity AOKS40B65H1 TO247 Tube 240 AOTS40B65H1 TO220 Tube 1000 Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol AOKS40B65H1/AOTS40B65H1 Collector-Emitter Voltage V CE 650 Gate-Emitter Voltage V GE ±30 Units V V Continuous Collector TC=25°C TC=100°C Current Pulsed Collector Current, Limited by TJmax I CM 120 A Turn off SOA, VCE ≤ 650V, Limited by TJmax I LM 120 A Short circuit withstanding time 1) VGE = 15V, VCC ≤ 300V, TJ ≤ 175°C t SC 5 µs TC=25°C Power Dissipation TC=100°C Junction and Storage Temperature Range IC PD T J , T STG 80 40 300 150 -55 to 175 Maximum lead temperature for soldering purpose, 1/8" from case for 5 seconds TL 300 Thermal Characteristics Parameter Symbol AOKS40B65H1/AOTS40B65H1 R θ JA Maximum Junction-to-Ambient 40 Maximum IGBT Junction-to-Case R θ JC 0.5 1) Allowed number of short circuits: <1000; time between short circuits: >1s. Rev.1.0: April 2015 www.aosmd.com A W °C °C Units °C/W °C/W Page 1 of 7 Electrical Characteristics (TJ=25°C unless otherwise noted) Parameter Conditions Min Typ Max Units STATIC PARAMETERS BV CES Collector-Emitter Breakdown Voltage IC=1mA, VGE=0V, TJ=25°C 650 - - V V CE(sat) VGE=15V, IC=40A Symbol V GE(th) I CES Collector-Emitter Saturation Voltage Gate-Emitter Threshold Voltage Zero Gate Voltage Collector Current TJ=25°C - 1.9 2.4 TJ=125°C - 2.36 - TJ=175°C - 2.63 - - 4.9 - TJ=25°C - - 10 TJ=125°C - - 500 TJ=175°C - - 10000 VCE=5V, IC=1mA VCE=650V, VGE=0V V V µA I GES Gate-Emitter leakage current VCE=0V, VGE=±30V - - ±100 nA g FS Forward Transconductance VCE=20V, IC=40A - 30 - S - 1789 - pF - 129 - pF - 64 - pF - 63 - nC - 18 - nC - 25 - nC - 256 - A - 14 - Ω - 41 - ns - 36 - ns - 130 - ns - 14 - ns - 1.27 - mJ DYNAMIC PARAMETERS C ies Input Capacitance C oes Output Capacitance C res Reverse Transfer Capacitance Qg Total Gate Charge Q ge Gate to Emitter Charge Q gc Gate to Collector Charge I C(SC) Short circuit collector current VGE=0V, VCC=25V, f=1MHz VGE=15V, VCC=520V, IC=40A VGE=15V, VCC=300V, tsc≤5us, TJ≤175°C VGE=0V, VCC=0V, f=1MHz Rg Gate resistance SWITCHING PARAMETERS, (Load Inductive, TJ=25°C) t D(on) Turn-On DelayTime tr Turn-On Rise Time t D(off) Turn-Off Delay Time tf Turn-Off Fall Time E on Turn-On Energy E off Turn-Off Energy TJ=25°C VGE=15V, VCC=400V, IC=40A, RG=7.5Ω Eon and Etotal include diode (AOK40B65H1) reverse recovery - 0.46 - mJ Total Switching Energy E total SWITCHING PARAMETERS, (Load Inductive, TJ=175°C) - 1.73 - mJ t D(on) Turn-On DelayTime - 38 - ns tr Turn-On Rise Time - 44 - ns t D(off) Turn-Off Delay Time - 155 - ns tf Turn-Off Fall Time - 18 - ns E on Turn-On Energy - 1.35 - mJ E off Turn-Off Energy E total Total Switching Energy TJ=175°C VGE=15V, VCC=400V, IC=40A, RG=7.5Ω Eon and Etotal include diode (AOK40B65H1) reverse recovery - 0.8 - mJ - 2.15 - mJ THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE. Rev.1.0: April 2015 www.aosmd.com Page 2 of 7 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 150 150 20V 15V 20V 17V 120 17V 120 13V 11V 60 IC (A) IC (A) 15V 90 13V 90 11V 60 9V 9V 30 30 VGE= 7V VGE=7V 0 0 0 1 2 3 4 5 6 0 7 1 2 3 4 5 6 7 VCE(V) Figure 2: Output Characteristic (Tj=175°C ) VCE(V) Figure 1: Output Characteristic (Tj=25°C ) 7.5 100 VCE=20V 6 60 VCE(sat) (V) IC (A) 80 175°C 40 IC=80A 4.5 3 IC=40A 25°C -40°C 20 1.5 IC=20A 0 0 3 6 9 12 VGE(V) Figure 3: Transfer Characteristic 15 0 25 50 75 100 125 150 175 Temperature (°C) Figure 4: Collector-Emitter Saturation Voltage vs. Junction Temperature 7 VGE(TH)(V) 6 5 4 3 2 1 0 25 50 75 100 125 150 175 TJ (°C) Figure 5: VGE(TH) vs. Tj Rev.1.0: April 2015 www.aosmd.com Page 3 of 7 TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 15 VCE=520V IC=40A Cies 1000 Capacitance (pF) VGE(V) 12 9 6 3 Coes 100 Cres 10 0 1 0 15 30 45 60 75 0 Qg(nC) Figure 6: Gate-Charge Characteristics 8 16 24 32 VCE(V) Figure 7: Capacitance Characteristic 40 350 Power Disspation (W) 300 250 200 150 100 50 0 25 50 100 125 150 175 TCASE(°C) Figure 9: Power Disspation as a Function of Case 10000 100 Td(off) Tf Td(on) Tr 80 Switching Time (nS) Current rating IC(A) 1000 60 40 20 75 100 0 10 1 25 50 75 100 125 150 175 TCASE(°C) Figure 10: Current De-rating Rev.1.0: April 2015 www.aosmd.com 25 50 75 100 125 150 TJ (°C) Figure 11: Switching Time vs.Tj (VGE=15V,VCE=400V,IC=40A,Rg=7.5Ω) 175 Page 4 of 7 ≤ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10000 10000 Td(off) Tf Td(on) Tr 1000 Switching Time (nS) Switching Time (nS) 1000 Td(off) Tf Td(on) Tr 100 10 100 10 1 1 20 30 40 50 60 70 IC (A) Figure 12: Switching Time vs. IC (Tj=175°C,VGE=15V,VCE=400V,Rg=7.5Ω) 0 80 40 60 Rg (Ω) Figure 13: Switching Time vs. Rg (Tj=175°C,VGE=15V,VCE=400V,IC=40A) Eoff Eoff Eon Eon 8 4 Etotal Switching Energy (mJ) Etotal 6 4 2 0 3 2 1 0 20 30 40 50 60 70 IC (A) Figure 14: Switching Loss vs. IC (Tj=175°C,VGE=15V,VCE=400V,Rg=7.5Ω) 80 0 20 40 60 Rg (Ω) Figure 15: Switching Loss vs. Rg (Tj=175°C,VGE=15V,VCE=400V,IC=40A) 80 3 3 Eoff Eoff Eon 2.5 Eon 2.5 Etotal Switching Energ y (mJ) Etotal Switching Energy (mJ) 80 5 10 SwitchIng Energy (mJ) 20 2 1.5 1 0.5 0 2 1.5 1 0.5 0 25 Rev.1.0: April 2015 50 75 100 125 150 TJ (°C) Figure 16: Switching Loss vs. Tj (VGE=15V,VCE=400V,IC=40A,Rg=7.5Ω) 175 www.aosmd.com 200 250 300 350 400 450 500 VCE (V) Figure 17: Switching Loss vs. VCE (Tj=175°C,VGE=15V,IC=40A,Rg=7.5Ω) Page 5 of 7 □ TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS ZθJC Normalized Transient Thermal Resistance 10 1 D=Ton/T TJ,PK=TC+PDM.ZθJC.RθJC RθJC=0.5°C/W In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse 0.1 PDM Single Pulse 0.01 Ton T 0.001 1E-06 1E-05 0.0001 0.001 0.01 0.1 1 10 Pulse Width (s) Figure 18: Normalized Maximum Transient Thermal Impedance for IGBT Rev.1.0: April 2015 www.aosmd.com Page 6 of 7 Figure A: Gate Charge Test Circuit & Waveforms Figure B: Inductive Switching Test Circuit & Waveforms Rev.1.0: April 2015 www.aosmd.com Page 7 of 7