Transcript
AON2707 30V P-Channel MOSFET with Schottky Diode General Description
Product Summary
The AON2707 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. A Schottky diode is provided to facilitate the implementation of a bidirectional blocking switch, or for DC-DC conversion applications.
Top View
VDS ID (at VGS=-10V)
-30V -4A
RDS(ON) (at VGS=-10V)
< 117mΩ
RDS(ON) (at VGS=-4.5V)
< 138mΩ
RDS(ON) (at VGS=-2.5V)
< 193mΩ
Typical ESD protection
HBM Class 2
VKA
20V
IF
2A
VF (at IF=1A)
<0.45V
DFN 2x2 Bottom View
D
A
S
K
K G S
K G D
A NC D
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol MOSFET Drain-Source Voltage VDS -30 Gate-Source Voltage Continuous Drain Current A
VGS TA=25°C
Schottky reverse voltage Continuous Forward TA=25°C
VKA
Pulsed Forward Current TA=25°C Power Dissipation A
Rev0: Dec. 2012
1.5
t ≤ 10s Steady-State
t ≤ 10s Steady-State
V A
15 2.8
2.7
1.8
1.7
TJ, TSTG
-55 to 150
-55 to 150
°C
Symbol
Typ 35 65
Max 45 85
Units °C/W °C/W
36 67
47 87
°C/W °C/W
PD
Junction and Storage Temperature Range Thermal Characteristics Parameter: MOSFET Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A Parameter: Schottky Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A
20 2.5
IFM
TA=70°C
A
-15
IF
B
V
-3
IDM
TA=70°C
Units V
-4
Pulsed Drain Current B
Current A
±12
ID
TA=70°C
Schottky
RθJA
RθJA
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W
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AON2707
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS IGSS VGS(th) ID(ON)
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30 -1 TJ=55°C
-5
Gate-Body leakage current
VDS=0V, VGS=±12V
Gate Threshold Voltage On state drain current
VDS=VGS, ID=-250µA
-0.7
VGS=-10V, VDS=-5V
-15
Static Drain-Source On-Resistance
±10
VGS=-4.5V, ID=-2A
110
138
mΩ
148
193
mΩ
-1
V
-3.2
A
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Input Capacitance Ciss
Gate resistance
V A
VGS=-2.5V, ID=-1A Diode Forward Voltage
Rg
µA
165
VSD
Reverse Transfer Capacitance
-1.5
138
TJ=125°C
VDS=-5V, ID=-4A
Crss
-1.05
µA
117
Forward Transconductance
Output Capacitance
Units
97
gFS
Coss
Max
V
VDS=-30V, VGS=0V
VGS=-10V, ID=-4A RDS(ON)
Typ
VGS=0V, VDS=-15V, f=1MHz
9 -0.8
mΩ
S
305
pF
42
pF
26
pF
8.5
17
Ω
SWITCHING PARAMETERS Total Gate Charge Qg(10V)
6.8
12
nC
Qg(4.5V)
Total Gate Charge
3.2
6
Qgs
Gate Source Charge
Qgd tD(on) tr tD(off)
Turn-On Rise Time
tf trr Qrr
VGS=0V, VDS=0V, f=1MHz
VGS=-10V, VDS=-15V, ID=-4A
nC
Gate Drain Charge
1.2
nC
Turn-On DelayTime
6.0
ns
5 21
ns ns
Turn-Off DelayTime Turn-Off Fall Time
VGS=-10V, VDS=-15V, RL=3.75Ω, RGEN=3Ω
6.5
ns
IF=-4A, dI/dt=100A/µs
15
Body Diode Reverse Recovery Charge IF=-4A, dI/dt=100A/µs
6
ns nC
Body Diode Reverse Recovery Time
SCHOTTKY PARAMETERS VF Forward Voltage Drop
IF=1A
0.4
VR=5V VR=5V, TJ=125°C
0.45 0.05
Irm
Maximum reverse leakage current
Irm
Maximum reverse leakage current
VR=16V VR=16V, TJ=125°C
CT trr
Junction Capacitance
VR=10V
34
Schottky Reverse Recovery Time
IF=1A, dI/dt=100A/µs
11
Schottky Reverse Recovery Charge
IF=1A, dI/dt=100A/µs
0.8
Qrr
nC
0.75
10 0.1 20
V mA mA pF
14
ns nC
A: The value of R θJA is measured with the device mounted on 1in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The value in any given application depends on the user's specific board design. The current rating is based on the t ≤ 10s thermal resistance rating. B: Repetitive rating, pulse width limited by junction temperature. C. The R θJA is the sum of the thermal impedance from junction to lead R θJL and lead to ambient. D. The static characteristics in Figures 1 to 6 are obtained using <300 ms pulses, duty cycle 0.5% max. E. These tests are performed with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T A=25°C. The SOA curve provides a single pulse rating.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev0: Dec. 2012
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AON2707
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
15
VDS=-5V
-10V
-6V 8 -8.0V
10 -ID(A)
-ID (A)
6 -4.5V -2.5V
4
5
125°C 2 25°C
VGS=-2V 0
0 0
1
2
3
4
5
0
1
-VDS (Volts) Fig 1: On-Region Characteristics
3
4
-VGS(Volts) Figure 2: Transfer Characteristics
200
1.6 Normalized On-Resistance
VGS=-2.5V 150 RDS(ON) (mΩ Ω)
2
VGS=-4.5V 100 VGS=-10V 50
0
VGS=-4.5V ID=-2A 1.4 VGS=-10V ID=-4A 1.2 VGS=-2.5V ID=-1A 1
0.8 0
2
4
6
8
0
25
-ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage
50
75
100
125
150
175
Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature
1E+01
300 ID=-4A 250
1E+00
125°C
-IS (A)
RDS(ON) (mΩ Ω)
200 150
125°C
1E-01
1E-02 100 25°C
25°C
1E-03
50 0
1E-04 0
2
4
6
8
10
-VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage
Rev0: Dec. 2012
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics
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AON2707
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
500 VDS=-15V ID=-4A 400 Ciss
Capacitance (pF)
-VGS (Volts)
8
6
4
300
200
2
100
0
0
0
2
4
6
8
Coss Crss 0
-Qg (nC) Figure 7: Gate-Charge Characteristics
15
20
25
30
10000 TJ(Max)=150°C TA=25°C 1000
100µs RDS(ON) limited
1ms
100
10ms
TJ(Max)=150°C TA=25°C
0.1
Power (W)
10µs
10.0
-ID (Amps)
10
-VDS (Volts) Figure 8: Capacitance Characteristics
100.0
1.0
5
10
10s DC
1 1E-06
0.0 0.01
0.1
1
10
0.0001
0.01
1
100
10000
100
-VDS (Volts)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note E)
Figure 9: Maximum Forward Biased Safe Operating Area (Note E)
Zθ JA Normalized Transient Thermal Resistance
10
1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=85°C/W
0.1 PD 0.01 Ton
Single Pulse 0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
T 100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note E)
Rev0: Dec. 2012
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AON2707
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
200
160 Capacitance (pF)
IF (Amps)
125°C
1 25°C
120
80
40
0.1
0 0
0.2
0.4
0.6
0.8
1
1.2
0
VF (V) Figure 12: Schottky Forward Characteristics
5
10
15
20
VKA (Volts) Figure 13: Schottky Capacitance Characteristics
0.42
10
Leakage Current (mA)
0.39 IF=1A VF (Volts)
0.36 0.33 IF=0.5A 0.30
VKA=20V 1
VKA=16V 0.1
0.27 0.24
0.01 0
25
50
75
100
125
150
0
Temperature (°C) Figure 14: Schottky Forward Drop vs. Junction Temperature
Zθ JA Normalized Transient Thermal Resistance
50
75
100
125
150
Temperature (°C) Figure 15: Schottky Leakage Current vs. Junction Temperature
10
1
25
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA RθJA=87°C/W
0.1 PD
0.01
Ton 0.001 1E-05
0.0001
0.001
0.01
0.1
1
T
10
100
1000
Pulse Width (s) Figure 16: Schottky Normalized Maximum Transient Thermal Impedance (Note E)
Rev0: Dec. 2012
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AON2707 AON2707 Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
+
VDC
Qgd
+
DUT
Qgs
Vds
Vgs Ig Charge
Resistive Switching Test Circuit & Waveforms RL Vds
toff
ton
Vgs
-
DUT
Vgs
VDC
td(on)
td(off)
tr
tf
90%
Vdd
+
Rg
Vgs
10% Vds
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev0: Dec. 2012
L
-Isd
+ Vdd
t rr
dI/dt -I RM Vdd
VDC
-
-I F
-Vds
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