Transcript
AON2810 30V Dual N-Channel AlphaMOS
General Description
Product Summary
• Latest Trench Power AlphaMOS (αMOS LV) technology • Very Low RDS(ON) at 2.5V VGS • Low Gate Charge • ESD protection • RoHS and Halogen-Free Compliant
VDS ID (at VGS=10V)
30V 2A
RDS(ON) (at VGS=10V)
< 44 mΩ
RDS(ON) (at VGS=4.5V)
< 52 mΩ
RDS(ON) (at VGS=2.5V)
< 74 mΩ
Typical ESD protection
HBM Class 3A
Application • DC/DC Converters
DFN 2x2A Top View
D2
Pin 1
G1
S1
G2
G1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol VDS Drain-Source Voltage Gate-Source Voltage
Pulsed Drain Current VDS Spike Power Dissipation B
VGS TA=25°C
Rev.1.0: August 2013
Steady-State
A
36
V W
1.6
TJ, TSTG
Symbol t ≤ 10s
V
2.5
PD
Junction and Storage Temperature Range
±12
8
VSPIKE
TA=70°C
Units V
1.6
IDM 100ns TA=25°C
Maximum 30 2
ID
TA=70°C C
Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D
S2
S1
Pin 1
Continuous Drain Current G
D2
D1
Bottom View D1 S2 G2 D1 D2
RθJA
-55 to 150
Typ 40 65
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°C
Max 50 80
Units °C/W °C/W
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AON2810
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V
Gate-Body leakage current
VDS=0V, VGS=±10V
Gate Threshold Voltage
VDS=VGS，ID=250µA VGS=10V, ID=2A
Static Drain-Source On-Resistance
1
44
41
52
VGS=2.5V, ID=1A
56
74
VGS=4.5V, ID=1A
9.5
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.75
IS
Maximum Body-Diode Continuous CurrentG
DYNAMIC PARAMETERS Ciss Input Capacitance Reverse Transfer Capacitance
Rg
Gate resistance
V
61
VDS=5V, ID=2A
Crss
µA
1.4
36
Forward Transconductance
Output Capacitance
±10
50
TJ=125°C
gFS
Coss
µA
5 0.6
VGS=0V, VDS=15V, f=1MHz
S V
2
A
235
pF
75
pF pF Ω
8
12
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
4.5
10
nC
Qg(4.5V) Total Gate Charge
2.2
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
VGS=10V, VDS=15V, ID=2A
4
mΩ
1
15 f=1MHz
Units V
1 TJ=55°C
VGS(th)
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
0.3
nC
0.7
nC
3
ns
3
ns
24
ns
6
ns
7.2
ns nC
VGS=10V, VDS=15V, RL=7.5Ω, RGEN=3Ω IF=2A, dI/dt=100A/µs
Body Diode Reverse Recovery Charge IF=2A, dI/dt=100A/µs
1.3
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. B. The Power dissipation PD is based on R θJA t ≤ 10s value and the maximum allowed junction temperature of 150°C. The value in any given application depends on the user's specific board design. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initial TJ =25°C. D. The RθJA is the sum of the thermal impedance from junction to case RθJC and case to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-case thermal impedance which is measured with the device mounted to a large heatsink, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited. H. These tests are performed with the device mounted on 1 in2 FR-4 board with 2oz. Copper, in a still air environment with TA=25°C. THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.1.0: August 2013
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AON2810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 20.0
20 10V
VDS=5V
4.5V
16.0
3V
16
12.0 ID(A)
ID (A)
12 2.5V
8.0
8
4.0
4
125°C 25°C
VGS=2V 0
0.0 0
1
2
3
4
0
5
100
2
3
4
5
Normalized On-Resistance
1.6
80 RDS(ON) (mΩ Ω)
1
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
VGS=2.5V 60 VGS=4.5V 40 VGS=10V 20
VGS=4.5V ID=1A
1.4
17 VGS=10V ID5 =2A 2 10
1.2 VGS=2.5V ID=1A
1
0.8
0 0
0
2
4 6 8 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
100
1.0E+01 ID=2A 1.0E+00
80
40 125°C
1.0E-01
60
IS (A)
RDS(ON) (mΩ Ω)
125°C
1.0E-02
40 1.0E-03 25°C
20
25°C
1.0E-04 1.0E-05
0 0
2
4
6
8
10
VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.1.0: August 2013
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AON2810
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
350 VDS=15V ID=2A
300 Ciss 250
Capacitance (pF)
VGS (Volts)
8
6
4
200 150
Coss
100
2 50 0
Crss
0 0
1
2
3
4
5
0
5
Qg (nC) Figure 7: Gate-Charge Characteristics
10
15
20
25
30
VDS (Volts) Figure 8: Capacitance Characteristics 200
10.0
10µs RDS(ON) limited
TA=25°C
100µs
ID (Amps)
1ms 10ms
DC 0.1
Power (W)
150
1.0
10s
50
TJ(Max)=150°C TA=25°C 0.0 0.01
100
0 0.00001
0.1
1
10
0.001
0.1
10
1000
100
VDS (Volts)
Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
VGS> or equal to 2.5V Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
RθJA=80°C/W
0.1 PD 0.01
Single Pulse Ton
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
T 100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.1.0: August 2013
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AON2810
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf t o ff
D iode R ecovery T est C ircuit & W aveform s Q rr = -
V ds +
Idt
DUT V gs
V ds -
Isd V gs
Ig
Rev.1.0: August 2013
L
Isd
+ VD C
-
IF
t rr
dI/dt I RM
V dd
V dd V ds
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