Transcript
AON3611 30V Complementary MOSFET
General Description
Product Summary
The AON3611 uses advanced trench technology to provide excellent RDS(ON) and low gate charge. The complementary MOSFETs may be used in inverter and other applications.
N-channel
P-channel
VDS (V) = 30V
VDS (V) = -30V
ID = 5A
ID = -6A
(VGS = ±10V)
RDS(ON) < 50mΩ
RDS(ON) < 38mΩ
(VGS = ±10V)
RDS(ON) < 70mΩ
RDS(ON) < 62mΩ
(VGS = ±4.5V)
D1
D2 DFN 3x3 Top View
Top View
Bottom View S2 G2
D2
S1
D1
G1
D1
D2 G1
G2 S2
N-channel Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Max N-channel Drain-Source Voltage VDS 30 Gate-Source Voltage Continuous Drain Current
TA=70°C
Pulsed Drain Current
C
Power Dissipation
TA=70°C
Junction and Storage Temperature Range Thermal Characteristics: N-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Steady-State Steady-State Maximum Junction-to-Lead Thermal Characteristics: P-channel Parameter t ≤ 10s Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Steady-State Steady-State Maximum Junction-to-Lead
Rev.2.0: May 2013
Units V
±20
±20
V
5
-6
3.8
-4.7
20
-30
2.1
2.5
1.3
1.6
TJ, TSTG
-55 to 150
-55 to 150
°C
Symbol
Typ 50 80 48
Max 60 98 58
Units °C/W °C/W °C/W
Typ 40 70 38
Max 50 85 46
Units °C/W °C/W °C/W
ID IDM
TA=25°C B
Max P-channel -30
VGS TA=25°C
S1
P-channel
PD
RθJA RθJL Symbol RθJA RθJL
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A
W
Page 1 of 9
AON3611
N-channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=250µA, VGS=0V TJ=55°C
Gate-Body leakage current
VDS=0V, VGS=±20V VDS=VGS, ID=250µA
1.5
ID(ON)
On state drain current
VGS=10V, VDS=5V
20
±100
nA
2
2.5
V
40
50
64
80
VGS=4.5V, ID=3A
53
70
mΩ
1
V
1.5
A
VGS=10V, ID=5A Static Drain-Source On-Resistance
TJ=125°C
A
gFS
Forward Transconductance
VDS=5V, ID=5A
11
VSD
Diode Forward Voltage
IS=1A,VGS=0V
0.79
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
µA
5
Gate Threshold Voltage
Units V
1
VGS(th)
Coss
Max
30
VDS=30V, VGS=0V
IGSS
RDS(ON)
Typ
VGS=0V, VDS=15V, f=1MHz
S
170
pF
35
pF
23 VGS=0V, VDS=0V, f=1MHz
pF Ω
2.0
3.0
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
4.05
10
nC
Qg(4.5V) Total Gate Charge
2
6
nC
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
VGS=10V, VDS=15V, ID=5A
1.5
mΩ
0.55
nC
1
nC
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
IF=5A, dI/dt=100A/µs
Qrr
Body Diode Reverse Recovery Charge IF=5A, dI/dt=100A/µs
2.5
VGS=10V, VDS=15V, RL=3Ω, RGEN=3Ω
4.5
ns
1.5
ns
18.5
ns
15.5
ns
7.5
ns nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: May 2013
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Page 2 of 9
AON3611
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 15
10
10V
VDS=5V 4V 8
4.5V 10 ID (A)
6 ID(A)
3.5V
4
125°C
5 25°C
2
VGS=3V
0
0 0
1
2
3
4
1
5
80
3
4
5
Normalized On-Resistance
2
VGS=4.5V
60 RDS(ON) (mΩ Ω)
2
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
40
VGS=10V
20
1.8
VGS=10V ID=5A
1.6
17 5 2 VGS=4.5V 10
1.4 1.2
ID=3A
1 0.8
0 0
2
0
4
6 8 10 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
120
1.0E+01 ID=5A
2.1 1.0E+00
100
2.5 1.6
1.3 125°C
1.0E-01 IS (A)
RDS(ON) (mΩ Ω)
80 60
1.0E-02
125°C
1.0E-03
40 25°C
20
25°C
1.0E-04 1.0E-05
0 2
6 8 10 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.2.0: May 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 3 of 9
AON3611
N-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
300 VDS=15V ID=5A
250 Capacitance (pF)
VGS (Volts)
8
6
4
Ciss
200 150 100
2
Coss 50
0
Crss
0 0
1 2 3 4 Qg (nC) Figure 7: Gate-Charge Characteristics
5
0
5 10 15 20 25 VDS (Volts) Figure 8: Capacitance Characteristics
30
100
100
TA=25°C
ID (Amps)
RDS(ON) limited
100µs
1
1ms 10ms 100ms 10s
TJ(Max)=150°C TA=25°C
0.1
Power (W)
10µs
10
10
DC 0.01
1 0.01
0.1
1 VDS (Volts)
10
100
0.00001
0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JC Normalized Transient Thermal Resistance
10
1
D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC
0.001
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
2.1 1.3
RθJA=98°C/W
2.5 1.6
0.1 PD 0.01
Single Pulse Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: May 2013
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Page 4 of 9
AON3611
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
-
DUT Vgs Ig
Charge
Resistive Switching Test Circuit & Waveforms RL Vds Vds
DUT
Vgs
90%
+ Vdd
VDC
-
Rg
10%
Vgs
Vgs
td(on)
tr
td(off)
ton
tf toff
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms L
2
EAR= 1/2 LIAR
Vds
BVDSS
Vds
Id
+ Vdd
Vgs
Vgs
I AR
VDC
-
Rg
Id
DUT Vgs
Vgs
Diode Recovery Test Circuit & Waveforms Q rr = - Idt
Vds + DUT Vgs
Vds Isd Vgs Ig
Rev.2.0: May 2013
L
Isd
+ Vdd
t rr
dI/dt I RM Vdd
VDC
-
IF
Vds
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Page 5 of 9
AON3611
P-channel Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS BVDSS Drain-Source Breakdown Voltage IDSS
Zero Gate Voltage Drain Current
Conditions
Min
ID=-250µA, VGS=0V
-30
Max
-1 TJ=55°C
-5
IGSS
Gate-Body leakage current
VDS=0V, VGS=±20V
Gate Threshold Voltage
VDS=VGS, ID=-250µA
-1.4
ID(ON)
On state drain current
VGS=-10V, VDS=-5V
-30
Units V
VDS=-30V, VGS=0V
VGS(th)
µA
±100
nA
-1.9
-2.4
V
30
38
45
57
VGS=-4.5V, ID=-4A
46
62
mΩ
13 -1
V
-2
A
VGS=-10V, ID=-6A RDS(ON)
Typ
Static Drain-Source On-Resistance
TJ=125°C
gFS
Forward Transconductance
VDS=-5V, ID=-6A
VSD
Diode Forward Voltage
IS=-1A,VGS=0V
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance
A
-0.76
mΩ
S
520
pF
VGS=0V, VDS=-15V, f=1MHz
100
pF
VGS=0V, VDS=0V, f=1MHz
7.5
11.5
Ω
SWITCHING PARAMETERS Qg(10V) Total Gate Charge
9.2
20
nC
Qg(4.5V) Total Gate Charge
4.6
10
nC
Coss
Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
tf
Turn-Off Fall Time
trr
Body Diode Reverse Recovery Time
Qrr
65
VGS=-10V, VDS=-15V, ID=-6A
pF
1.6
nC
2.2
nC
7.5
ns
VGS=-10V, VDS=-15V, RL=2.5Ω, RGEN=3Ω
5.5
ns
19
ns
7
ns
IF=-6A, dI/dt=100A/µs
11
Body Diode Reverse Recovery Charge IF=-6A, dI/dt=100A/µs
5.3
ns nC
A. The value of RqJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RqJA is the sum of the thermal impedance from junction to lead RqJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300ms pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited.
COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev.2.0: May 2013
www.aosmd.com
Page 6 of 9
AON3611
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30 -10V
-8V
30
-5V
VDS=-5V
25
25 -4.5V
20 -ID(A)
-ID (A)
20 15
-4V 10
15 125°C
10
5
5
VGS=-3.5V
25°C
0
0 0
1
2
3
4
1
5
100
3
4
5
6
Normalized On-Resistance
1.8
80 VGS=-4.5V RDS(ON) (mΩ Ω)
2
-VGS(Volts) Figure 2: Transfer Characteristics (Note E)
-VDS (Volts) Fig 1: On-Region Characteristics (Note E)
60 40 VGS=-10V
20
1.6
VGS=-10V ID=-6A
1.4
17 5 2 10 VGS=-4.5V
1.2 1
ID=-4A
0.8
0 0
2
0
4
6 8 10 -ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction 18Temperature (Note E)
120
1.0E+02 ID=-6A 1.0E+01 2.1
100
2.5 1.6
1.3
1.0E+00 125°C -IS (A)
RDS(ON) (mΩ Ω)
80 125°C 60
1.0E-01 1.0E-02 25°C
40
1.0E-03
20
1.0E-04
25°C
1.0E-05
0 2
6 8 10 -VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev.2.0: May 2013
4
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0.0
0.2
0.4
0.6
0.8
1.0
1.2
-VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
Page 7 of 9
AON3611
P-channel TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 10
800 VDS=-15V ID=-6A
700
8 Capacitance (pF)
-VGS (Volts)
600 6
4
Ciss
500 400 300 Coss 200
2 100 0
Crss
0 0
2 4 6 8 Qg (nC) Figure 7: Gate-Charge Characteristics
10
0
5 10 15 20 25 -VDS (Volts) Figure 8: Capacitance Characteristics
100
100.0
TA=25°C
10µs RDS(ON) limited
100µs Power (W)
-ID (Amps)
10.0
30
1ms 10ms
1.0
100ms
TJ(Max)=150°C TA=25°C
0.1
10
10s DC
0.0
1 0.01
0.1
1 -VDS (Volts)
10
100
0.00001
0.1 10 1000 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
0.001
Zθ JC Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJC.RθJC 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
2.1 1.3
RθJA=85°C/W
2.5 1.6
0.1 PD 0.01 Single Pulse
Ton
T
0.001 0.00001
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev.2.0: May 2013
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Page 8 of 9
AON3611
Gate Charge Test Circuit & Waveform Vgs Qg -10V
-
-
VDC
Qgd
+
+ DUT
Qgs
Vds
VDC
Vgs Ig Charge R e s is tiv e S w itc h in g T e s t C irc u it & W a v e fo rm s RL Vds
t o ff
to n td (o n )
Vgs
-
DUT
Vgs
t d (o ff)
tr
tf
90%
Vdd
VDC
+
Rg
Vgs
10% Vds
Unclamped Inductive Switching (UIS) Test Circuit & Waveforms 2
L
EAR= 1/2 LIAR
Vds Vds
Id
-
Vgs
Vgs
VDC
+
Rg
BVDSS Vdd Id I AR
DUT Vgs
Vgs
D iode R e covery Te st C ircuit & W aveform s Q rr = -
V ds +
Idt
DUT V gs
Vds -
Isd V gs
Ig
Rev.2.0: May 2013
L
-Isd
+ V dd
t rr
dI/dt -I R M V dd
VDC
-
-I F
-Vds
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Page 9 of 9
