Transcript
AON3806 20V Dual N-Channel MOSFET
General Description
Product Summary VDS
The AON3806 uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V while retaining a 12V VGS(MAX) rating. It is ESD protected. This device is suitable for use as a uni-directional or bi-directional load switch, facilitated by its commondrain configuration.
20V 6A
ID (at VGS=4.5V) RDS(ON) (at VGS=4.5V)
< 22mΩ
RDS(ON) (at VGS =4.0V)
< 24mΩ
RDS(ON) (at VGS =2.5V)
< 33mΩ
Typical ESD protection
HBM Class 2
DFN 3x3 Top View
D1
Bottom View
D2
Top View S2
1
8
D2
G2 S1 G1
2
7
3
6
4
5
D2 D1 D1
G1
G2
S1
Pin 1
Absolute Maximum Ratings TA=25°C unless otherwise noted Parameter Symbol Drain-Source Voltage VDS Gate-Source Voltage Continuous Drain Current G
VGS TA=25°C
Pulsed Drain Current C
Junction and Storage Temperature Range Thermal Characteristics Parameter Maximum Junction-to-Ambient A Maximum Junction-to-Ambient A D Maximum Junction-to-Lead
Rev 7: Dec. 2011
Steady-State Steady-State
V A
2.5
W
1.6
TJ, TSTG
Symbol t ≤ 10s
±12
24
PD
TA=70°C
Units V
4.7
IDM TA=25°C
Power Dissipation B
Maximum 20 6
ID
TA=70°C
S2
RθJA RθJL
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-55 to 150
Typ 40 75 30
°C
Max 50 95 40
Units °C/W °C/W °C/W
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AON3806
Electrical Characteristics (TJ=25°C unless otherwise noted) Symbol
Parameter
STATIC PARAMETERS Drain-Source Breakdown Voltage BVDSS
Conditions
Min
ID=250µA, VGS=0V
Zero Gate Voltage Drain Current
IGSS
Gate-Body leakage current
VDS=0V, VGS=±10V
VGS(th)
Gate Threshold Voltage
VDS=VGS，ID=250µA
ID(ON)
On state drain current
VGS=4.5V, VDS=5V
TJ=55°C
±10
µA
0.85
1.1
V
13.5
17.5
22
20.5
26
33
24
A
14
18
24
VGS=2.5V, ID=4A
19
24
33
mΩ mΩ
1
V
3.5
A
gFS
Forward Transconductance
VDS=5V, ID=6A
25
Diode Forward Voltage
IS=1A,VGS=0V
0.65
IS
Maximum Body-Diode Continuous Current
DYNAMIC PARAMETERS Ciss Input Capacitance Output Capacitance
Crss
Reverse Transfer Capacitance
Rg
Gate resistance
VGS=0V, VDS=10V, f=1MHz VGS=0V, VDS=0V, f=1MHz
SWITCHING PARAMETERS Qg Total Gate Charge Qgs
Gate Source Charge
Qgd
Gate Drain Charge
tD(on)
Turn-On DelayTime
tr
Turn-On Rise Time
tD(off)
Turn-Off DelayTime
mΩ
VGS=4.0V, ID=5A
VSD
Coss
µA
5 0.5
TJ=125°C
Units V
1
VGS=4.5V, ID=6A Static Drain-Source On-Resistance
Max
20
VDS=20V, VGS=0V
IDSS
RDS(ON)
Typ
500
pF
100
pF
52
pF
2.6
kΩ
6 VGS=4.5V, VDS=10V, ID=6A
VGS=5V, VDS=10V, RL=1.67Ω, RGEN=3Ω
S
9
nC
2
nC
1
nC
0.2
us
1.5
us
7.4
us
tf
Turn-Off Fall Time
18
us
trr
Body Diode Reverse Recovery Time
IF=6A, dI/dt=100A/µs
9
Qrr
Body Diode Reverse Recovery Charge IF=6A, dI/dt=100A/µs
10
ns nC
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design. B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance. C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C. D. The RθJA is the sum of the thermal impedance from junction to lead RθJL and lead to ambient. E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max. F. These curves are based on the junction-to-ambient thermal impedance which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating. G. The maximum current rating is package limited.
THIS PRODUCT HAS BEEN DESIGNED AND QUALIFIED FOR THE CONSUMER MARKET. APPLICATIONS OR USES AS CRITICAL COMPONENTS IN LIFE SUPPORT DEVICES OR SYSTEMS ARE NOT AUTHORIZED. AOS DOES NOT ASSUME ANY LIABILITY ARISING OUT OF SUCH APPLICATIONS OR USES OF ITS PRODUCTS. AOS RESERVES THE RIGHT TO IMPROVE PRODUCT DESIGN, FUNCTIONS AND RELIABILITY WITHOUT NOTICE.
Rev 7: April. 2012
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AON3806
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 30
20
4.5V
2.5V
VDS=5V
4V
15
ID(A)
ID (A)
20 2V
10
125°C
10 25°C
5 VGS=1.5V 0
0 0
1
2
3
4
0
5
40
1
1.5
2
2.5
3
1.8 Normalized On-Resistance
35 VGS=2.5V
30 RDS(ON) (mΩ Ω)
0.5
VGS(Volts) Figure 2: Transfer Characteristics (Note E)
VDS (Volts) Fig 1: On-Region Characteristics (Note E)
25 VGS=4.0V
20 15
VGS=4.5V 10 5
VGS=2.5V ID=4A
1.6 1.4
17 VGS=4.5V 5 ID=6A
1.2
2 10
VGS=4.0V ID=5A
1 0.8
0 0
0
5
10 15 20 ID (A) Figure 3: On-Resistance vs. Drain Current and Gate Voltage (Note E)
25
50
75
100
125
150
175
0 Temperature (°C) Figure 4: On-Resistance vs. Junction Temperature 18 (Note E)
60
1.0E+01 ID=6A 1.0E+00
50
40 125°C
40
IS (A)
RDS(ON) (mΩ Ω)
1.0E-01
125°C
1.0E-02
30
25°C
1.0E-03 20
1.0E-04
25°C
1.0E-05
10 0
4 6 8 VGS (Volts) Figure 5: On-Resistance vs. Gate-Source Voltage (Note E)
Rev 7: April. 2012
2
10
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0.0
0.2
0.4
0.6
0.8
1.0
VSD (Volts) Figure 6: Body-Diode Characteristics (Note E)
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AON3806
TYPICAL ELECTRICAL AND THERMAL CHARACTERISTICS 5
800 VDS=10V ID=6A
4 Ciss
Capacitance (pF)
VGS (Volts)
600 3
2
400
Coss 200
1
0
Crss
0 0
2 4 6 Qg (nC) Figure 7: Gate-Charge Characteristics
8
0
5
10 15 VDS (Volts) Figure 8: Capacitance Characteristics
20
10000
100.0
TA=25°C
10µs RDS(ON) limited
1000
100µs 1ms 10ms
1.0
TJ(Max)=150°C TA=25°C
0.1
Power (W)
ID (Amps)
10.0
100
10
10s DC
1 0.0
1E-05 0.01
0.1
1 VDS (Volts)
10
0.001
0.1
10
1000
100 Pulse Width (s) Figure 10: Single Pulse Power Rating Junction-toAmbient (Note F)
Figure 9: Maximum Forward Biased Safe Operating Area (Note F)
Zθ JA Normalized Transient Thermal Resistance
10 D=Ton/T TJ,PK=TA+PDM.ZθJA.RθJA 1
In descending order D=0.5, 0.3, 0.1, 0.05, 0.02, 0.01, single pulse
RθJA=95°C/W
0.1 PD 0.01 Single Pulse
Ton
T
0.001 1E-05
0.0001
0.001
0.01
0.1
1
10
100
1000
Pulse Width (s) Figure 11: Normalized Maximum Transient Thermal Impedance (Note F)
Rev 7: April. 2012
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AON3806
Gate Charge Test Circuit & Waveform Vgs Qg 10V
+
+ Vds
VDC
-
Qgs
Qgd
VDC
DUT
-
Vgs Ig Charge
R es istiv e S w itch ing T e st C ircu it & W a ve fo rm s RL V ds Vds
DUT
Vgs
90 %
+
Vdd
VDC
-
Rg
1 0%
Vgs
V gs
t d (o n )
tr
t d (o ff)
to n
tf t o ff
D iode R ecovery T est C ircuit & W aveform s Q rr = -
V ds +
Idt
DUT V gs
V ds -
Isd V gs
Ig
Rev 7: April. 2012
L
Isd
+ VD C
-
IF
t rr
dI/dt I RM
V dd
V dd V ds
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